A. M. Kaiser

Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission

The CoFeB/MgO system shows promise as a magnetic tunnel junction with perpendicular magnetization and low critical current densities for spin-torque driven magnetization switching. The distribution of B after annealing is believed to be critical to performance. We have studied the distribution of B in a Ta/Co0.2Fe0.6B0.2/MgO sample annealed at 300 °C for 1 h with standing-wave hard x-ray photoemission spectroscopy (SW-HXPS). Comparing experimental rocking curve data to x-ray optical calculations indicates diffusion of 19.5% of the B uniformly into the MgO and of 23.5% into a thin TaB interface layer. SW-HXPS is effective for probing depth distributions in such spintronic structures.

Temperature-driven nucleation of ferromagnetic domains in FeRh thin films

The evolution of ferromagnetic (FM) domains across the temperature-driven antiferromagnetic (AF) to FM phase transition in uncapped and capped epitaxial FeRh thin films was studied by x-ray magnetic circular dichroism and photoemission electron microscopy. The coexistence of the AF and FM phases was evidenced across the broad transition and the different stages of nucleation, growth, and coalescence were directly imaged. The FM phase nucleates into single domain islands and the width of the transition of an individual nucleus is sharper than that of the transition in a macroscopic average. V C 2012 American Institute of Physics .[ http://dx.doi.org/10.1063/1.4730957]

Making use of x-ray optical effects in photoelectron-, Auger electron-, and x-ray emission spectroscopies: Total reflection, standing-wave excitation, and resonant effects

We present a general theoretical methodology and related open-access computer program for carrying out the calculation of photoelectron, Auger electron, and x-ray emission intensities in the presence of several x-ray optical effects, including total reflection at grazing incidence, excitation with standing-waves produced by reflection from synthetic multilayers and at core-level resonance conditions, and the use of variable polarization to produce magnetic circular dichroism. Calculations illustrating all of these effects are presented, including in some cases comparisons to experimental results. Sample types include both semi-infinite flat surfaces and arbitrary multilayer configurations, with interdiffusion/roughness at their interfaces. These x-ray optical effects can significantly alter observed photoelectron, Auger, and x-ray intensities, and in fact lead to several generally useful techniques for enhancing surface and buried-layer sensitivity, including layer-resolved densities of states and depth profiles of element-specific magnetization. The computer program used in this study should thus be useful for a broad range of studies in which x-ray optical effects are involved or are to be exploited in next-generation surface and interface studies of nanoscale systems.

Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy

The experimental determination of valence band offsets (VBOs) at interfaces in complex-oxide heterostructures using conventional soft x-ray photoelectron spectroscopy (SXPS, hν ≤ 1500 eV) and reference core-level binding energies can present challenges because of surface charging when photoelectrons are emitted and insufficient probing depth to clearly resolve the interfaces. In this paper, we compare VBOs measured with SXPS and its multi-keV hard x-ray analogue (HXPS, hν > 2000 eV). We demonstrate that the use of HXPS allows one to minimize charging effects and to probe more deeply buried interfaces in heterostructures such as SrTiO3/LaNiO3 and SrTiO3/GdTiO3. The VBO values obtained by HXPS for these interfaces are furthermore found to be close to those determined by first-principles calculations.

Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy

We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of a 3-nm thickness of La-doped SrTiO3 with 6% La embedded in a SrTiO3 film. Results are compared to a thick, uniformily doped La:SrTiO3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti3+ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

Insulating state of ultrathin epitaxial LaNiO{sub 3} thin films detected by hard x-ray photoemission

In order to understand the influence of strain and film thickness on the electronic structure of thin films of strongly correlated oxides, we have applied hard x-ray photoemission (HXPS) at 6 keV, soft x-ray photoemission (XPS) at 1.5 keV, and transmission electron microscopy to epitaxial LaNiO{sub 3} films deposited on two substrates: LaAlO{sub 3} (compressive strain) and (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (tensile strain). Using inelastic attenuation lengths in LaNiO{sub 3} determined from the HXPS data, we have decomposed valence-band spectra into layer-specific contributions. This decomposition is validated by comparing with the results of first-principles calculations using a hybrid functional. The resultant thin-film LaNiO{sub 3} densities of states exhibit significant differences in spectral weights for the thinnest LaNiO{sub 3} films. A gap opening consistent with a metal-to-insulator transition is observed for the thinnest 2.7 nm LaNiO{sub 3} film on an (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} substrate, with a similar gap opening also being observed in complementary soft x-ray photoemission at 1.5 keV for a thinner 1.4 nm film on an LaAlO{sub 3} substrate. A metal-to-insulator transition in very thin nm-scale films of LaNiO{sub 3} is thus suggested as a general phenomenon.

Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.