Chan Bin Mo

Highly entangled carbon nanotube scaffolds by self-organized aqueous droplets

We present a facile and versatile directed assembly process for highly entangled carbon nanotube (CNT) scaffolds. Macroporous polymer/CNT nanocomposites were prepared by a ‘breath figure’ method. After pyrolysis of the nanocomposites, highly stable CNT scaffolds with diverse morphologies such as monolayered or multilayered cellular films or individual CNT rings were prepared. The cellular CNT scaffolds demonstrated high electrical conductivity and field-emission properties, which is potentially useful for various applications in electronics and energy storage devices.

A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

This paper presents a detailed study on the effect of different thicknesses of HfO2 high-k interfacial layer between double-stacked layers of Ag nanocrystals formed by a chemical synthesis and thermal decomposition method. To confirm the formation and purity of the well-ordered Ag nanocrystals with a high density (2.7×1012cm−2), transmission electron microscopy and x-ray diffraction analysis were used. After fabricating metal-oxide-silicon structures with 2 and 6nm interfacial HfO2 and the double-stacked Ag nanocrystals, a program efficiency and retention time characteristics were investigated.

Nonvolatile Memory Characteristics of NMOSFET With Ag Nanocrystals Synthesized via a Thermal Decomposition Process for Uniform Device Distribution

This paper presents nonvolatile memory characteristics using Ag nanocrystals (NCs) formed by a thermal decomposition and size-selective precipitation technique for Flash memory application. In the NC formation process, the size of NCs and the space NC-to-NC were precisely controlled by a size-selective precipitation technique and the length of the self-assembled monolayer surrounding the NCs, respectively. The size and density of the Ag NCs synthesized were typically 3-5 nm and , respectively. Due to the regularly distributed Ag NCs with high density, uniform memory characteristics and high program efficiency were achieved from NMOSFETs embedded with the Ag NCs, which were fabricated by the gate-last process.

Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process

Nonvolatile memory characteristics are presented with Ag nanocrystals (NCs) formed by a thermal decomposition process for a flash memory application. A size of NC and a space of NC-to-NC were precisely controlled by a size-selective precipitation technique and the length of self-assembled monolayer surrounding NCs, respectively. The size and density of Ag NCs synthesized by the thermal decomposition were typically 3-5 nm and 2.7 times 1012 cm-2. Nonvolatile memory operations with relatively high speed and superior endurance characteristics were reported from NMOSFETs embedding metal NCs, which were fabricated by the gate last process.