Changjae Yang

Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic AsH3 interruption

Self-assembled InAs quantum dots (QDs) on GaAs substrates were grown by metal organic chemical vapor deposition with periodic AsH3 interruption. In contrast to the conventional InAs QD growth method, AsH3 was interrupted periodically while TMIn was introduced into the reactor continuously. By interrupting AsH3 periodically, the growth surface is modulated between As-stabilized surface and In-stabilized one, resulting in complete suppression of relaxed large island formation and significant improvement in photoluminescence intensity. With further optimization of growth parameters, the authors obtained the emission at 1.32μm and narrow linewidth of 32meV at room temperature.

Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport.

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.

Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics

Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor–acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP.

Study of Multi-stacked InAs Quantum Dot Infrared Photodetectors Grown by Metal Organic Chemical Vapor Deposition

We grew multi-stacked InAs/ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above , the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to . This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and well layer.

Growth mechanism of highly uniform InAs/GaAs quantum dot with periodic arsine interruption by metalorganic chemical vapor deposition

The mechanism for suppressing the formation of abnormally large islands during the conventional quantum dot (QD) growth was investigated. In comparison of the periodic arsine interruption method to the conventional method, InAs QDs grown on GaAs substrate by metal organic chemical vapor deposition has a higher density and aspect ratio without large islands. The formation of large islands was related to the inhomogeneity in the nucleation and growth process of QDs. The surface modification from As-stabilized to In-stabilized surfaces during arsine interruption modulated the surface energy and resulted in more homogeneous and simultaneous nucleation of QDs. The arsine interruption time was found to be a critical parameter for the homogeneous QD growth without abnormally large islands.

Enhancement of Interface Properties between Passivation Layers and InSb by Using Remote PECVD

We report the enhanced interface properties between passivation layers and InSb by using remote PECVD system. SiO2 and Si3N4 layers deposited by remote PECVD showed lower interface trap densities than layers deposited by normal PECVD. SiO2 layers deposited by remote PECVD showed 7.1×1011 cm−2 eV−1 of interface trap density at midgap which is slightly lower than SiO2 layers deposited by PECVD. Si3N4 layers deposited by remote PECVD showed 1.6∼1.7×1012 cm−2 eV−1 at midgap which is 3 times lower than Si3N4 layers deposited by PECVD. Interface properties of SiO2 are superior to that of Si3N4 in both case of PECVD and remote PECVD. To investigate the interface properties between SiO2 and InSb, X‐ray photoelectron spectroscopy was conducted. Indium and antimony oxide phases were found at the interface and these oxide phases could act as the origin of interface traps.