Chansu Park

Metal-insulator (fermion-boson)-crossover origin of pseudogap phase of cuprates i: anomalous heat conductivity, insulator resistivity boundary, nonlinear entropy

Among all experimental observations of cuprate physics, the metal-insulator-crossover (MIC), seen in the pseudogap (PG) region of the temperature-doping phase diagram of copper-oxides under a strong magnetic field, when the superconductivity is suppressed, is most likely the most intriguing one. Since it was expected that the PG-normal state for these materials, as for conventional superconductors, is conducting. This MIC, revealed in such phenomena as heat conductivity downturn, anomalous Lorentz ratio, insulator resistivity boundary, nonlinear entropy, resistivity temperature upturn, insulating ground state, nematicity- and stripe-phases and Fermi pockets, unambiguously indicates on the insulating normal state, from which the high-temperature superconductivity (HTS) appears. In the present work (article I), we discuss the MIC phenomena mentioned in the title of article. The second work (article II) will be devoted to discussion of other listed above MIC phenomena and also to interpretation of the recent observations in the hidden magnetic order and scanning tunneling microscopy (STM) experiments spin and charge fluctuations as the intra PG and HTS pair ones. We find that all these MIC (called in the literature as non-Fermi liquid) phenomena can be obtained within the Coulomb single boson and single fermion two liquid model, which we recently developed, and the MIC is a crossover of single fermions into those of single bosons. We show that this MIC originates from bosons of Coulomb two liquid model and fermions, whose origin is these bosons. At an increase of doping up to critical value or temperature up to PG boundary temperature, the boson system undegoes bosonic insulator - bosonic metal - fermionic metal transitions.

MRI analysis of extra-capsular ganglia at the gastrocnemius origin and their association with osteoarthritis

AIM To evaluate the prevalence, clinical relevance, and magnetic resonance imaging (MRI) features of extra-capsular ganglia at the gastrocnemius origin and to assess their association with internal derangement and osteoarthritis of the knee. MATERIALS AND METHODS One hundred consecutive knee MRI examinations, obtained within a 6-month period from patients with no history of recent knee trauma, recent injections, inflammatory arthritis, infection, or tumours, were evaluated retrospectively for the presence of ganglia at the gastrocnemius origin. The lesions were divided into two groups: an intra-capsular and an extra-capsular group. Cyst morphology (size, shape, and internal septa), internal derangement of the knee (cartilage lesion, cruciate ligament injury, meniscal tear, and corner injury on MRI, and osteoarthritis of the knee on radiographs) were evaluated. The chi-square, Fishers exact, and t-tests were used to compare the two groups, in addition to multivariate stepwise logistic regression analysis. RESULTS Thirty-nine ganglia with an extra-capsular location were identified on 100 knee MRI (39 %). Rounded shape and internal septa were more common in the extra-capsular than in the intra-capsular group (p<0.001). Frequencies of high-grade cartilage, meniscal tear, and high-grade osteoarthritis significantly differed between the groups (p≤0.038). In multivariate analysis, the only significant association was between high-grade osteoarthritis and the extra-capsular group. CONCLUSION Extra-capsular ganglia at the gastrocnemius origin were not uncommon on knee MRI and had features typical of ganglia found at other sites. High-grade osteoarthritis was significantly associated with extra-capsular ganglia.

Microstructural Characteristics of Electro-Plated Cu Films by DC and Pulse Systems

The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

Fabrication of Poly Seed Layer for Silicon Based Photovoltaics by Inversed Aluminum-Induced Crystallization

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.