Chantal J. Arena

Kinetics of Si incorporation into a Ge matrix for Si1−xGex layers grown by chemical vapor deposition

The growth rate and alloy composition of Si1−xGex layers grown in an industrial chemical vapor deposition (CVD) system have been analyzed as functions of the process parameters at a pressure enabling selective epitaxial growth. We systematically investigate the growth of Si1−xGex with 0.48<x<0.8, using GeH4∕SiCl2H2 partial pressure ratios up to 1.12, where the GeH4 flow was constant and the SiCl2H2 flow was varied. Epitaxial growth temperatures spanned from 350to600°C. The growth rate and alloy composition were limited by the surface reaction step with an activation energy of 1eV∕mol. A significant growth rate reduction is observed when increasing Si content. This feature is consistent with a passivation of the surface Si bonds with H and Cl atoms typical of chemical vapor deposition Si1−xGex layer growth. It is found empirically that x∕(1−x)∝pDCSΔn, Δn=0.32, where x is the Ge mole fraction and pDCS is the SiCl2H2 partial pressure. Then we tentatively develop a model to support the empirical laws found wi...

Selective Epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain and/or Buried SiGe Channels

SiGe R. Loo, P. Verheyen, R. Rooyackers, C. Walczyk*, F.E. Leys, D. Shamiryan, P.P. Absil, T. Delande, A. Moussa, J.W. Weijtmans, R. Wise, V. Machkaoutsan, C. Arena, J. McCormack, S. Passefort, H. Sorada, A. Inoue, B.C. Lee, S. Hyun, S. Jakschik, and M. Caymax 1 IMEC, Kapeldreef 75, 3001 Leuven (Belgium), *also Universitat Siegen, Holderlinstrasse 35, 7068 Siegen (Germany), Texas Instruments Inc., 13560 North Central Expressway, Dallas (USA), ASM-Belgium, Kapeldreef 75, 3001 Leuven (Belgium), ASM-America, 3440 East University Drive, Phoenix, (USA), KLA-Tencor Corp. 160 Rio Robles, San Jose (USA), Matsushita assignee at IMEC, Samsung assignee at IMEC, Infineon assignee at IMEC