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Featured researches published by Chaohao Hu.


Journal of Chemical Physics | 2008

Crystal structure prediction of LiBeH3 using ab initio total-energy calculations and evolutionary simulations

Chaohao Hu; Artem R. Oganov; Yong Wang; H. Y. Zhou; Andriy O. Lyakhov; J. Hafner

The stable crystal structure of LiBeH(3) is predicted on the basis of ab initio total-energy calculations using density-functional theory and an extended database of candidate structures and using global optimizations based on an evolutionary algorithm. At the level of density-functional theory, a CaSiO(3)_1-type structure with space group P2(1)/c, containing BeH(4) tetrahedra linked in chains, is the ground-state structure of LiBeH(3) (alpha-LiBeH(3)). It is found to be lower in energy than the structures proposed in previous studies. The analysis of the electronic structure shows that alpha-LiBeH(3) is an insulator with a band gap of about 4.84 eV and exhibits strong covalent bonding in the BeH(4) tetrahedral complexes. Calculations at finite temperatures and high pressures suggest that at T=408 K and ambient pressure a structural transition from alpha-LiBeH(3) (CaSiO(3)-type) to a YBO(3)-type structure with space group Cmcm occurs and that at a pressure of 7.1 GPa alpha-LiBeH(3) undergoes a pressure-induced structural transition from the alpha-phase to a MgSiO(3)-type structure with space group C2/c. The calculated enthalpies of formation (-45.36 and -30.12 kJ/mol H(2) without and with zero-point energy corrections) are in good agreement with the experimental result, indicating that LiBeH(3) is a potential hydrogen storage material with low activation barriers for hydrogen desorption.


Scientific Reports | 2016

Diverse Chemistry of Stable Hydronitrogens, and Implications for Planetary and Materials Sciences

Guang-Rui Qian; Haiyang Niu; Chaohao Hu; Artem R. Oganov; Qingfeng Zeng; Huai-Ying Zhou

Nitrogen hydrides, e.g., ammonia (NH3), hydrazine (N2H4) and hydrazoic acid (HN3), are compounds of great fundamental and applied importance. Their high-pressure behavior is important because of their abundance in giant planets and because of the hopes of discovering high-energy-density materials. Here, we have performed a systematic investigation on the structural stability of N-H system in a pressure range up to 800u2009GPa through evolutionary structure prediction. Surprisingly, we found that high pressure stabilizes a series of previously unreported compounds with peculiar structural and electronic properties, such as the N4H, N3H, N2H and NH phases composed of nitrogen backbones, the N9H4 phase containing two-dimensional metallic nitrogen planes and novel N8H, NH2, N3H7, NH4 and NH5 molecular phases. Another surprise is that NH3 becomes thermodynamically unstable above ~460u2009GPa. We found that high-pressure chemistry of hydronitrogens is much more diverse than hydrocarbon chemistry at normal conditions, leading to expectations that N-H-O and N-H-O-S systems under pressure are likely to possess richer chemistry than the known organic chemistry. This, in turn, opens a possibility of nitrogen-based life at high pressure. The predicted phase diagram of the N-H system also provides a reference for synthesis of high-energy-density materials.


Journal of Chemical Physics | 2015

Backbone NxH compounds at high pressures

Alexander F. Goncharov; Nicholas Holtgrewe; Guang-Rui Qian; Chaohao Hu; Artem R. Oganov; Maddury Somayazulu; Elissaios Stavrou; Chris J. Pickard; Adam Berlie; Fei Yen; Mahmood Mahmood; Sergey S. Lobanov; Zuzana Konôpková; Vitali B. Prakapenka

Optical and synchrotron x-ray diffraction diamond anvil cell experiments have been combined with first-principles theoretical structure predictions to investigate mixtures of N2 and H2 up to 55 GPa. Our experiments show the formation of structurally complex van der Waals compounds [see also D. K. Spaulding et al., Nat. Commun. 5, 5739 (2014)] above 10 GPa. However, we found that these NxH (0.5 < x < 1.5) compounds transform abruptly to new oligomeric materials through barochemistry above 47 GPa and photochemistry at pressures as low as 10 GPa. These oligomeric compounds can be recovered to ambient pressure at T < 130 K, whereas at room temperature, they can be metastable on pressure release down to 3.5 GPa. Extensive theoretical calculations show that such oligomeric materials become thermodynamically more stable in comparison to mixtures of N2, H2, and NH3 above approximately 40 GPa. Our results suggest new pathways for synthesis of environmentally benign high energy-density materials. These materials could also exist as alternative planetary ices.


AIP Advances | 2014

Exploration of stable compounds, crystal structures, and superconductivity in the Be-H system

Shuyin Yu; Qingfeng Zeng; Artem R. Oganov; Chaohao Hu; Gilles Frapper; Litong Zhang

Using first-principles variable-composition evolutionary methodology, we explored the high-pressure structures of beryllium hydrides between 0 and 400 GPa. We found that BeH2 remains the only stable compound in this pressure range. The pressure-induced transformations are predicted as Ibam→P3m1→R3m→Cmcm→P4/nmm, which occur at 24, 139, 204 and 349 GPa, respectively. P3m1 and R3m structures are layered polytypes based on close packings of H atoms with Be atoms filling all octahedral voids in alternating layers. Cmcm and P4/nmm contain two-dimensional triangular networks with each layer forming a kinked slab in the ab-plane. P3m1 and R3m are semiconductors while Cmcm and P4/nmm are metallic. We have explored superconductivity of both metal phases, and found large electron-phonon coupling parameters of λ = 0.63 for Cmcm with a Tc of 32.1-44.1 K at 250 GPa and λ = 0.65 for P4/nmm with a Tc of 46.1-62.4 K at 400 GPa. The dependence of Tc on pressure indicates that Tc initially increases to a maximum of 45...


Chinese Physics B | 2016

First-principles studies of electronic, optical, and mechanical properties of γ-Bi2Sn2O7 *

Chaohao Hu; Xue-Hui Yin; Dian-Hui Wang; Yan Zhong; Huaiying Zhou; Guanghui Rao

The detailed theoretical studies of electronic, optical, and mechanical properties of γ-Bi2Sn2O7 are carried out by using first-principle density functional theory calculations. Our calculated results indicate that γ-Bi2Sn2O7 is the p-type semiconductor with an indirect band gap of about 2.72 eV. The flat electronic bands close to the valence band maximum are mainly composed of Bi-6s and O-2p states and play a key role in determining the electrical properties of γ-Bi2Sn2O7. The calculated complex dielectric function and macroscopic optical constants including refractive index, extinction coefficient, absorption coefficients, reflectivity, and electron energy-loss function show that γ-Bi2Sn2O7 is an excellent light absorbing material. The analysis on mechanical properties shows that γ-Bi2Sn2O7 is mechanically stable and highly isotropic.


IOP Conference Series: Earth and Environmental Science | 2018

Synthesis and photocatalytic properties of MgBi2O6 with Ag additions

Liansheng Zhong; Chaohao Hu; Binqing Zhu; Yan Zhong; Huaiying Zhou

Ag-doped MgBi2O6 photocatalysts were synthesized by the low temperature hydrothermal method in combination with heat treatment reaction using NaBiO32H2O, MgCl26H2O, and AgNO3 as raw materials. The products were characterized by using power X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Energy dispersive X-ray detector (EDS), and UV-Vis diffusion reflectance spectra. The photocatalytic activity of MgBi2O6 with Ag additions was evaluated by degrading MB (10 mg/L) under visible light irradiation (λ > 420 nm). The results showed that in comparison with pure MgBi2O6, the photocatalytic activity of MgBi2O6 with about 5% Ag concentration is increased by about 24% after 120 min reaction. The enhancement of catalytic activity of Ag-doped MgBi2O6 photocatalysts should be related to the band structure, morphology and larger specific surface area.


Scientific Reports | 2017

Effects of Ni doping on various properties of NbH phases: A first-principles investigation

Yang Wu; Zhongmin Wang; Dianhui Wang; Zhenzhen Wan; Yan Zhong; Chaohao Hu; Huaiying Zhou

Changes in the stability, hydrogen diffusion, and mechanical properties of the NbH phases from Ni-doping was studied by using first-principles methods. The calculation results reveal that the single H atom adsorption is energetically favorable at the tetrahedral interstitial site (TIS) and octahedral interstitial site (OIS). The preferred path of H diffusion is TIS-to-TIS, followed by TIS-to-OIS in both Nb16H and Nb15NiH. Ni-doping in the Nb15NiH alloy lowers the energy barrier of H diffusion, enhances the H-diffusion coefficient (D) and mechanical properties of the Nb16H phase. The value of D increases with increasing temperature, and this trend due to Ni doping clearly becomes weaker at higher temperatures. At the typical operating temperature of 400u2009K, the D value of Nb15NiH (TIS) is about 1.90u2009×u200910−8u2009m2/s, which is about 80 times higher than that of Nb16H (TIS) (2.15u2009×u200910−10u2009m2/s). Our calculations indicated that Ni-doping can greatly improve the diffusion of H in Nb.


Journal of Chemical Physics | 2015

Backbone N[subscript x]H compounds at high pressures

Alexander F. Goncharov; Nicholas Holtgrewe; Guang-Rui Qian; Chaohao Hu; Artem R. Organov; Maddury Somayazulu; Elissaios Stavrou; Chris J. Pickard; Adam Berlie; Fei Yen; Mahmood Mahmood; Sergey S. Lobanov; Zuzana Konôpková; Vitali B. Prakapenka; DESY ; CIW ; Guilin UET ; Howard

Optical and synchrotron x-ray diffraction diamond anvil cell experiments have been combined with first-principles theoretical structure predictions to investigate mixtures of N2 and H2 up to 55 GPa. Our experiments show the formation of structurally complex van der Waals compounds [see also D. K. Spaulding et al., Nat. Commun. 5, 5739 (2014)] above 10 GPa. However, we found that these NxH (0.5 < x < 1.5) compounds transform abruptly to new oligomeric materials through barochemistry above 47 GPa and photochemistry at pressures as low as 10 GPa. These oligomeric compounds can be recovered to ambient pressure at T < 130 K, whereas at room temperature, they can be metastable on pressure release down to 3.5 GPa. Extensive theoretical calculations show that such oligomeric materials become thermodynamically more stable in comparison to mixtures of N2, H2, and NH3 above approximately 40 GPa. Our results suggest new pathways for synthesis of environmentally benign high energy-density materials. These materials could also exist as alternative planetary ices.


Journal of Chemical Physics | 2015

Backbone N{sub x}H compounds at high pressures

Chaohao Hu; Maddury Somayazulu; Elissaios Stavrou; Chris J. Pickard

Optical and synchrotron x-ray diffraction diamond anvil cell experiments have been combined with first-principles theoretical structure predictions to investigate mixtures of N2 and H2 up to 55 GPa. Our experiments show the formation of structurally complex van der Waals compounds [see also D. K. Spaulding et al., Nat. Commun. 5, 5739 (2014)] above 10 GPa. However, we found that these NxH (0.5 < x < 1.5) compounds transform abruptly to new oligomeric materials through barochemistry above 47 GPa and photochemistry at pressures as low as 10 GPa. These oligomeric compounds can be recovered to ambient pressure at T < 130 K, whereas at room temperature, they can be metastable on pressure release down to 3.5 GPa. Extensive theoretical calculations show that such oligomeric materials become thermodynamically more stable in comparison to mixtures of N2, H2, and NH3 above approximately 40 GPa. Our results suggest new pathways for synthesis of environmentally benign high energy-density materials. These materials could also exist as alternative planetary ices.


Physical Review Letters | 2013

Pressure-induced stabilization and insulator-superconductor transition of BH.

Chaohao Hu; Artem R. Oganov; Qiang Zhu; Guang-Rui Qian; Gilles Frapper; Andriy O. Lyakhov; Huai-Ying Zhou

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Yan Zhong

Guilin University of Electronic Technology

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Huaiying Zhou

Guilin University of Electronic Technology

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Artem R. Oganov

Skolkovo Institute of Science and Technology

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Dianhui Wang

Guilin University of Electronic Technology

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Huai-Ying Zhou

Central South University

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Dian-Hui Wang

Central South University

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Guanghui Rao

Guilin University of Electronic Technology

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Binqing Zhu

Guilin University of Electronic Technology

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Guang-Rui Qian

State University of New York System

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Jing Zhuang

Guilin University of Electronic Technology

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