Che-Cheng Huang

A 1V-2.39mW capacitor-coupling resonated low noise amplifier for 3-5GHz ultra-wideband system

In this paper a high gain, low power, low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with capacitor-coupling resonated load and it is fabricated in UMC 0.18um standard RF CMOS process. The LNA gives 10.3dB gain and 1.8GHz 3dB bandwidth (3.1 – 4.9GHz) while consuming only 2.39mW through a 1.0V supply. Over the 3.1 – 4.9GHz frequency band, a minimum noise figure of 4.5dB and input return loss lower than −5.7dB have been achieved.

A 1V CMOS low-noise amplifier with inductive resonated for 3.1–10.6GHz UWB wireless receiver

In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer for measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0 – 11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1 – 10.6GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than −8.7dB have been achieved.

CMOS Low-Noise Amplifier with Switching Groups for MB-OFDM UWB Wireless Radio System

This paper presents a low-noise amplifier (LNA) with switching groups for MB-OFDM Group-A, C, D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 um RF CMOS process. Simulation results show that power gain of ll.ldB, input and output matching lower then -8.4 dB and -8.3 dB, and a minimum NF of 3.8 dB can be achieved, while the power consumption is 24.8 mW through 1.8 V power supply.

Design considerations on input impedance matching for ultra-wideband low-noise amplifier

A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18um RF CMOS process. The trade off on noise figure and chip area in low-noise amplifier design is discussed. The two LNA (LC and Res) gives 14.5 dB gain; 7.2 GHz and 7.0 GHz 3 dB bandwidth (3.1-10.3 GHz and 3.1- 10.1 GHz) while consuming 22.8 mW and 23.8 mW through a 1.5 V supply. Over the 3.1 GHz - 10.3 GHz and 3.1 GHz- 10.1 GHz frequency band, a minimum noise figure of 2.6 dB and 6.3 dB and input return loss lower than -8.8 dB and - 6.8 dB have been achieved.

A CMOS current reused low-noise amplifier for ultra-wideband wireless receiver

A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18 um RF CMOS process. The LNA gives 13.1 dB gain; 9.1 GHz 3 dB bandwidth (3.1-12.2 GHz) while consuming 13.9 mW through a 1.8 V supply. Over the 3.1 GHz - 10.6 GHz frequency band, a minimum noise figure of 2.7 dB and input return loss lower than -8.7 dB have been achieved.

Multi-Stage Low-Noise Amplifier with LC-Tank Load for Ultra-Wideband Wireless Receiver

A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18 um RF CMOS process. The LNA gives 14.5 dB gain and 7.2 GHz 3 dB bandwidth (3.1-10.3 GHz) while consuming 22.8 mW through a 1.5 V supply. Over the 3.1 GHz-10.3 GHz frequency band, a minimum noise figure of 2.6 dB and input return loss lower than -8.8 dB have been achieved.

CMOS low-noise amplifier with shunt-peaking load for group 1∼3 MB-OFDM ultra-wideband wireless receiver

In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaking load and an output buffer for measurement purpose. It was fabricated in UMC 0.18 mum standard RF CMOS process. The LNA provides 14.1 dB maximum power gain between 2.3G Hz-8.0 GH while consuming 18.6 mW (including buffer) through a 1.8 V supply. Over the 3.1 GHz-8.0 GHz frequency band, a minimum noise figure is 2.0 dB. The input return loss is lower than -7.1 dB in the entire bandwidth has also been achieved.

A CMOS low-noise amplifier with impedance feedback for ultra-wideband wireless receiver system

In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is fabricated in TSMC 0.18 um standard RF CMOS process. The LNA gives 11.5 dB maximum power gain between 3.1 GHz-5.0 GHz while consuming 5.7 mW through a 1.8 V supply voltage. Over the 3.1 GHz-5.0 GHz frequency band, the minimum noise figure (NF) is 4.7 dB. Input return loss lower than -12.7 dB in all bandwidth have been achieved.

0.18um CMOS Low-Noise Amplifier with two 2 nd -order notch filters for Ultra-Wideband Wireless Receiver

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2nd-order notch filters and an output buffer for measurement purpose. It is simulated in TSMC 0.18 mum standard RF CMOS process. The LNA gives 13.1 dB maximum power gain between 3.0 GHz-4.9 GHz and 15.5 dB maximum power gain between 6.2 GHz-10.2 GHz while consuming 21.9 mW through a 1.8 V supply. Over the 3.1 GHz-4.9 GHz frequency band and the 6.2 GHz-10.2 GHz, a minimum noise figure is 2.5 dB and 2.8 dB. Input return loss lower than -6.4dB in all bandwidth have been achieved.

CMOS Low-Noise Amplifier for Mode-C & Mode-D MB-OFDM UWB Wireless Receiver

This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.