Chen Hongda

A flexible capacitive tactile sensor array with micro structure for robotic application

A flexible capacitive tactile sensor array with micro needle structure is proposed in this paper for robotic application. Micro needle layer made of polydimethylsiloxane (PDMS) is sandwiched between the upper electrode layer made of PDMS and the bottom electrode layer fabricated on polyester (PET) film. The PDMS material renders the device adequate flexibility as it can be rolled into a cylinder. The single cell size in the fabricated 4 × 4 sensors array is 0.7 × 0.5 cm2 and the initial capacitance of each cell is 0.86 pF. The fabricated cell shows a sensitivity of 3.26%/mN within the full scale range of 1 kPa. The micro needle structure gives better repeatability and stability. The maximum error during each measurement is about 3.2%, while the minimum error is about 1.2%.概要创新点面向机器人触觉恢复的广大市场需求, 本文提出了一种具有微针结构的柔性触觉传感器. 微针结构作为电介质层, 被夹在上下电极层之间, 形成平行板电容. 微针采用PDMS(聚二甲基硅氧烷)材料, 以保障器件的柔软性和可伸缩性. 微针结构的使用增加了器件的稳定性, 延长了器件的使用寿命. 在制成的4 × 4 检测阵列中, 单个检测单元大小为0.7 cm × 0.5 cm, 电容初值为0.86 pF. 经多次压按测试, 结果显示该阵列的测量范围为1 kPa, 检测精度为3.26 %/mN. 相同压力在多次检测中, 最大输出偏移为3.2%, 最小为1.2%.

Advances and prospects in visible light communications

Visible light communication (VLC) is an emerging technology in optical wireless communication (OWC) that has attracted worldwide research in recent years. VLC can combine communication and illumination together, which could be applied in many application scenarios such as visible light communication local area networks (VLANs), indoor localization, and intelligent lighting. In recent years, pioneering and significant work have been made in the field of VLC. In this paper, an overview of the recent progress in VLC is presented. We also demonstrate our recent experiment results including bidirectional 100 Mbit/s VLAN or Li-Fi system based on OOK modulation without blue filter. The VLC systems that we proposed are good solutions for high-speed VLC application systems with low-cost and low-complexity. VLC technology shows a bright future due to its inherent advantages, shortage of RF spectra and ever increasing popularity of white LEDs.

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Light Extraction Enhancement of GaN LED with a Two-Dimensional Photonic Crystal Slab

Light extraction effects of a photonic crystal slab with a micrometer scale lattice constant are studied. A GaN light emitting diode (LED) with a photonic crystal slab is fabricated. The light extraction effects and the enhancement mechanism are investigated. From theoretical analysis, it is found that the characteristics of LED light emission are modulated by the photonic crystal slab. Experimental results show that the LED light emission intensity is enhanced by 38% due to guide mode extracting by the photonic crystal.

Silicon light emitting device in CMOS technology

A novel silicon light emitting device was realized with standard 0.35 µm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500–820 nm.

Low power CMOS preamplifier for neural recording applications

A fully-differential bandpass CMOS (complementary metal oxide semiconductor) preamplifier for extracellular neural recording is presented. The capacitive-coupled and capacitive-feedback topology is adopted. The preamplifier has a midband gain of 20.4 dB and a DC gain of 0. The −3 dB upper cut-off frequency of the preamplifier is 6.7 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 8.2 μVrms integrated from 0.15 Hz to 6.7 kHz for recording the local field potentials and the mixed neural spikes with a power dissipation of 23.1 μW from a 3.3 V supply. A bandgap reference circuitry is also designed for providing the biasing voltage and current. The 0.22 mm2 prototype chip, including the preamplifier and its biasing circuitry, is fabricated in the 0.35-μm N-well CMOS 2P4M process.

A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser

Single-fundamental-mode photonic crystal (PhC) vertical cavity surface emitting lasers (VCSEL) are produced and their single-fundamental-mode performances are investigated and demonstrated. A two-dimensional PhC with single-point-defect structure is fabricated using UV photolithography and inductive coupled plasma reactive ion etching on the surface of the VCSELs top distributed Bragg-reflector. The PhC VCSEL maintains single-fundamental-mode operating with output power 1.7 mW and threshold current 2.5 mA. The full width half maximum of the lasing spectrum is less than 0.1 nm, the far field divergence angle is less than 10 degrees and the side mode suppression ratio is over 35 dB. The device characteristics are analyzed based on the effective index model of the photonic crystal fiber. The experimental results agree well with the theoretical expectation.

A multi-channel fully differential programmable integrated circuit for neural recording application

A multi-channel, fully differential programmable chip for neural recording application is presented. The integrated circuit incorporates eight neural recording amplifiers with tunable bandwidth and gain, eight 4th-order Bessel switch capacitor filters, an 8-to-1 analog time-division multiplexer, a fully differential successive approximation register analog-to-digital converter (SAR ADC), and a serial peripheral interface for communication. The neural recording amplifier presents a programmable gain from 53 dB to 68 dB, a tunable low cut-off frequency from 0.1 Hz to 300 Hz, and 3.77 μVrms input-referred noise over a 5 kHz bandwidth. The SAR ADC digitizes signals at maximum sampling rate of 20 kS/s per channel and achieves an ENOB of 7.4. The integrated circuit is designed and fabricated in 0.18-μm CMOS mix-signal process. We successfully performed a multi-channel in-vivo recording experiment from a rat cortex using the neural recording chip.

A novel implantable multichannel silicon-based microelectrode

Silicon-based microelectrodes have been confirmed to be helpful in neural prostheses. The fabricated 7-channel silicon-based microelectrode was feasible to be implanted into the brain cortex. The manufacturing process by microelectromechanical system (MEMS) technology was detailed with four photolithographic masks. The microscopic photographs and SEM images indicated that the probe shank was 3mm long, 100 µm wide and 20 µm thick with the recording sites spaced 120 µm apart for good signal isolation. To facilitate the insertion and minimize the trauma, the microelectrode is narrowed down gradually near the tip with the tip taper angle of 6 degrees. Curve of the single recording site impedance versus frequency was shown by test in vitro and the impedance declined from 150.5k to 6.0k with frequency changing from 10k to 10 MHz.