Chen Mingjun

Mechanism of micro-waviness induced KH2PO4 crystal laser damage and the corresponding vibration source

The low laser induced damage threshold of the KH2PO4 crystal seriously restricts the output power of inertial confinement fusion. The micro-waviness on the KH2PO4 surface processed by single point diamond turning has a significant influence on the damage threshold. In this paper, the influence of micro-waviness on the damage threshold of the KH2PO4 crystal and the chief sources introducing the micro-waviness are analysed based on the combination of the Fourier modal theory and the power spectrum density method. Research results indicate that among the sub-wavinesses with different characteristic spatial frequencies there exists the most dangerous frequency which greatly reduces the damage threshold, although it may not occupy the largest proportion in the original surface. The experimental damage threshold is basically consistent with the theoretical calculation. For the processing parameters used, the leading frequency of micro-waviness which causes the damage threshold to decrease is between 350−1 μm−1 and 30−1 μm−1, especially between 90−1 μm−1 and 200−1 μm−1. Based on the classification study of the time frequencies of micro-waviness, we find that the axial vibration of the spindle is the chief source introducing the micro-waviness, nearly all the leading frequencies are related to the practical spindle frequency (about 6.68 Hz, 400 r/min) and a special middle frequency (between 1.029 Hz and 1.143 Hz).

Study of modulation property to incident laser by surface micro-defects on KH2PO4 crystal

KH2PO4 crystal is a crucial optical component of inertial confinement fusion. Modulation of an incident laser by surface micro-defects will induce the growth of surface damage, which largely restricts the enhancement of the laser induced damage threshold. The modulation of an incident laser by using different kinds of surface defects are simulated by employing the three-dimensional finite-difference time-domain method. The results indicate that after the modulation of surface defects, the light intensity distribution inside the crystal is badly distorted, with the light intensity enhanced symmetrically. The relations between modulation properties and defect geometries (e.g., width, morphology, and depth of defects) are quite different for different defects. The modulation action is most obvious when the width of surface defects reaches 1.064 μm. For defects with smooth morphology, such as spherical pits, the degree of modulation is the smallest and the light intensity distribution seems relatively uniform. The degree of modulation increases rapidly with the increase of the depth of surface defects and becomes stable when the depth reaches a critical value. The critical depth is 1.064 μm for cuboid pits and radial cracks, while for ellipsoidal pits the value depends on both the width and the length of the defects.

Molecular dynamics simulation on mechanical property of carbon nanotube torsional deformation

In this paper torsional deformation of the carbon nanotubes is simulated by molecular dynamics method. The Brenner potential is used to set up the simulation system. Simulation results show that the carbon nanotubes can bear larger torsional deformation, for the armchair type (10,10) single wall carbon nanotubes, with a yielding phenomenon taking place when the torsional angle is up to 63?(1.1rad). The influence of carbon nanotube helicity in torsional deformation is very small. The shear modulus of single wall carbon nanotubes should be several hundred GPa, not 1?GPa as others report.

Study of the near-field modulation property of microwaviness on a KH2PO4 crystal surface

The KH2PO4 crystal is a key component in optical systems of inertial confinement fusion (ICF). The microwaviness on a KH2PO4 crystal surface is strongly related to its damage threshold which is a key parameter for application. To study the laser induced damage mechanism caused by microwaviness, in this paper the near-field modulation properties of microwaviness to the incident wave are discussed by the Fourier modal method. Research results indicate that the microwaviness on the machined surface will distort the incident wave and thus lead to non-uniform distribution of the light intensity inside the crystal; in a common range of microwaviness amplitude, the light intensity modulation degree increases about 0.03 whenever the microwaviness amplitude increases 10 nm; 1 order diffraction efficiencies are the key factors responsible for light intensity modulation inside the crystal; the light intensity modulation is just around the microwaviness in the form of an evanescent wave, not inside the crystal when the microwaviness period is below 0.712 μm; light intensity modulation degree has two extreme points in microwaviness periods of 1.064 μm and 1.6 μm, remains unchanged between periods of 3 μm and 150 μm, and descends above the period of 150 μm to 920 μm.

Effect of structural parameters of Gaussian repaired pit on light intensity distribution inside KH2PO4 crystal

KH2PO4 (KDP) crystal with excellent optical properties is a very important element of inertial confinement fusion (ICF) device. However, KDP crystal surface micro-defects severely reduce the crystal laser damage threshold, affecting the crystal service life. In this paper, Gaussian repaired pit is used to replace the crystal surface micro-defects, in order to improve the laser damage resistance of the KDP crystal with surface micro-defects. At first, the physical model of Gaussian repaired pit is built by Fourier model method, and the accuracy of the method is analyzed. It is found that the calculation error can be reduced by increasing the product of the width—period ratio and the truncation constant of the repaired pit. The calculation results about the physical model of Gaussian repaired pit show that the light intensity distribution within the crystal is symmetrical, and there are evidently enhanced light intensity regions in the crystal. Meanwhile, the maximum relative intensity inside the KDP crystal decreases gradually with the increase of the width of the Gaussian repaired pit. Secondly, the Gaussian repaired pits with different widths and the same depth of 20 μm are processed by micro-milling. Their surfaces are very smooth and present the ductile cutting state under the microscope. Finally, the laser damage threshold of the Gaussian repaired pits on the surface of the KDP crystal sample is measured by a 3ω, 6-ns laser. The results show that the maximum threshold of the Gaussian repaired pits is 3.12 J/cm2, which is 60% higher than the threshold of initial damage point, and the laser damage threshold increases with the increase of the width of the Gaussian repaired pit.

Deposition mechanism of nano-structured single-layered C36 film on a diamond (100) crystal plane

The Brenner–LJ potential is adopted to describe the interaction between C36 clusters and diamond surface, and the deposition mechanism of multi-C36 clusters on the diamond surface is also studied by using the method of molecular dynamics simulation. The simulation results show that the competition effects of two interactions, i.e. the interaction between cluster and cluster and the interaction between cluster and crystal plane, are studied, and then the influence of these competition effects on C36 cluster deposition is analysed. The finding is that when an incident energy is appropriately chosen, C36 clusters can be chemically adsorbed and deposited steadily on the diamond surface in the form of single-layer, and in the deposition process the multi-C36 clusters present a phenomenon of energy transmission. The experimental result shows that at a temperature of 300K, in order to deposit C36 clusters into a steady nano-structured single-layered film, the optimal incident energy is between 10 and 18 eV, if the incident energy is larger than 18 eV, the C36 clusters will be deposited into an island nano-structured film.