Chen-Shiung Chang

Optical properties and potential applications of ε-GaSe at terahertz frequencies

Ordinary and extraordinary refractive indices of an ɛ-GaSe crystal at terahertz (THz) frequencies are experimentally determined in this study. Fitting experimental data by THz time-domain spectroscopy (THz-TDS) and a Fourier transform infrared spectrometer (FTIR), we proposed revised complex dielectric functions and Sellmeier equations of GaSe for both ordinary and extraordinary waves from 0.2 to 100 THz. Phonon vibrational modes and overtones in the THz frequency range are examined in detail. The high magnitude of the figure of merit (FOM~103 at 1 THz), the large birefringence (Δn~0.76 at 1 THz). and the low absorption coefficient (α~0.2 cm−1 at 1 THz) of GaSe are also identified. Potential applications to practical photonic devices such as phase shifters at THz frequencies are proposed.

Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal

We report a study of the effect of optical absorption on generation of coherent infrared radiation from mid-IR to THz region from GaSe crystal. The infrared-active modes of epsilon-GaSe crystal at 236 cm(-1) and 214 cm(-1) were found to be responsible for the observed optical dispersion and infrared absorption edge. Based upon phase matching characteristics of GaSe for difference-frequency generation (DFG), new Sellmeier equations of GaSe were proposed. The output THz power variation with wavelength can be properly explained with a decrease of parametric gain and the spectral profile of absorption coefficient of GaSe. The adverse effect of infrared absorption on (DFG) process can partially be compensated by doping GaSe crystal with erbium ions.

Erbium doped GaSe crystal for mid-IR applications

We reported a type-I difference-frequency generator (DFG), based on erbium doped GaSe (Er:GaSe) crystals as a coherent infrared source tunable from 2.4 mum to 28 mum. The two mixing beams used for the DFG are a tunable near infrared output (1.1-1.8 mum) from an optical parametric amplifier (OPA) and the fundamental beam of a picosecond Nd:YAG laser at 1.064 mum. The system can produce a maximum output pulse energy of 5 microJ at wavelength of 3.5 microm, corresponding to a photon conversion efficiency of 8% at a pump intensity of 1.7 GW/cm(2). The nonlinear coefficient (d(eff)) of 0.5 atom % erbium doped GaSe crystal was found to be 55.3 pm/V or 24 % higher than that of a pure GaSe crystal. The improvement of d(eff) is attributed to the substitutive and interstitial doping of Er ion in GaSe unit cell. The optical properties of GaSe influenced by the erbium doping are also presented.

Revealing the flexoelectricity in the mixed-phase regions of epitaxial BiFeO3 thin films

Understanding the elastic response on the nanoscale phase boundaries of multiferroics is an essential issue in order to explain their exotic behaviour. Mixed-phase BiFeO3 films, epitaxially grown on LaAlO3 (001) substrates, have been investigated by means of scanning probe microscopy to characterize the elastic and piezoelectric responses in the mixed-phase region of rhombohedral-like monoclinic (MI) and tilted tetragonal-like monoclinic (MII,tilt) phases. Ultrasonic force microscopy reveal that the regions with low/high stiffness values topologically coincide with the MI/MII,tilt phases. X-ray diffraction strain analysis confirms that the MI phase is more compliant than the MII,tilt one. Significantly, the correlation between elastic modulation and piezoresponse across the mixed-phase regions manifests that the flexoelectric effect results in the enhancement of the piezoresponse at the phase boundaries and in the MI regions. This accounts for the giant electromechanical effect in strained mixed-phase BiFeO3 films.

Platinum-graphene counter electrodes for dye-sensitized solar cells

This paper describes the photovoltaic performance of dye-sensitized solar cells (DSSCs) containing graphene-incorporated counter electrodes (CEs). The location and thickness of graphene in CEs are optimized to improve the photovoltaic performance of DSSCs, compared with typical Pt CEs. The DSSC, with a Pt/few-layer graphene (FLG) CE, achieved 8% in short-circuit current density and 13% in power conversion efficiency (PCE). Electrochemical impedance spectroscopy shows that the DSSC, with a Pt/FLG CE, exhibits a series resistance lower than that with a Pt CE. The lower series resistance is attributed to the contact resistance at the interface of platinum and fluorine doped tin oxide. The contact resistance is reduced by the formation of the thin platinum-carbon composite layer. It is demonstrated that the consumption of Pt could be reduced with a Pt/FLG CE. However, graphene/Pt CEs resulted in a slow charge-transfer process and consequently a worse photovoltaic performance of DSSCs.

Surface-enhanced Raman scattering of graphene with photo-assisted-synthesized gold nanoparticles.

This paper presents a convenient and reliable method to prepare gold nanoparticles (AuNPs) on graphene. Photo-assisted synthesis (PAS) was employed to grow AuNPs in AuCl(4)(-) electrolyte on graphene. The size of AuNPs could be as large as 130 nm. This optical method had a steady growth rate of AuNPs. The distribution of AuNPs was well controlled by focusing the laser for PAS. The minimum diameter of the distribution was approximately 1 μm. Surface-enhanced Raman scattering of graphene due to AuNPs was observed. Electrical fields near AuNPs calculated by the finite-difference time-domain algorithm ensured that the Raman enhancement was attributed to the localized surface plasmons of AuNPs.

Electrical properties of GaSe doped with Er

Measurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×1017–6×1017 cm−3 at room temperature, and that the mobility of these holes is in the range 22–34 cm2/V s. The temperature dependence of the hole concentration is explained using the two-acceptor model, in which one acceptor level is at around 65 meV above the valence band and the other one is at ∼158 meV. The DLTS measurements yield similar results. Furthermore, the shallow acceptor impurities contribute free hole carriers and act as radiative centers; the deep acceptor impurities are nonradiative centers, which are responsible for the quenching behavior of Er-related luminescence. The temperature dependence of the hole mobility can be understood as the combined scatterings of homopolar optical phonons and ionized impurities.

Optoelectronic phase-locking of microwave signals up to 18 GHz by a laser-diode-based GaAs:Cr photoconductive harmonic mixer

A GaAs:Cr photoconductive switch activated by 30-ps optical pulses from a gain-switched laser diode ( lambda =0.79 mu m) was used as a harmonic mixer to optoelectronically phase-lock microwave signals up to 18.01 GHz. The conversion loss of the harmonic mixer was 70 dB at 16.01 GHz. The phase noise degradation of the phase-locked 16.01-GHz signal at 5-kHz offset measured with respect to the 1.0-GHz synthesizer signal for driving the laser diode was 30 dB.<<ETX>>

Single domain m-plane ZnO grown on m-plane sapphire by radio frequency magnetron sputtering.

High-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scattering and transmission electron microscopy (TEM). The in-plane epitaxial relationship between ZnO and sapphire follows (0002)(ZnO) [parallel] (112[overline]0)(sapphire) and (112[overline]0)(ZnO) [parallel] (0006)(sapphire) and the ZnO/sapphire interface structure can be described by the domain matching epitaxy along the [112[overline]0](ZnO) direction. The vibrational properties of the films were investigated by polarization dependent micro-Raman spectroscopy. Both XRD and micro-Raman results reveal that the obtained m-ZnO layers are under an anisotropic biaxial strain but still retains a hexagonal lattice.

Buildup of steady-state picosecond pulses in an actively mode-locked laser-diode array

We have studied experimentally the temporal and spectral characteristics of an actively mode-locked laserdiode array in an external cavity as it evolves to the steady state. It is found that the buildup time to steadystate picosecond pulses takes less than 45 round trips. The number of clusters of the longitudinal-mode spectrum reduces during the evolution and finally approaches a steady-state spectral distribution with the pulse energy mainly distributed among a few clusters near the line center.