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Dive into the research topics where Chengbin Li is active.

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Featured researches published by Chengbin Li.


Japanese Journal of Applied Physics | 2005

Ultrafast electronic excitation in CaF2 crystals

Shizhen Xu; Tianqing Jia; Xiaoxi Li; Donghai Feng; Haiyi Sun; Chengbin Li; Xiaofeng Wang; Hirao Kuroda; Ruxin Li; Zhizhan Xu

A new pump and probe experimental system was developed, the pump pulse duration of which is stretched and is much longer than that of the probe pulse. Using this system, time-resolved electronic excitation processes and damage mechanisms in CaF2 crystals were studied. The measured reflectivity of the probe pulse begins to increase at the peak of the pump pulse and increases rapidly in the latter half of the pump pulse, when the pump pulse duration is stretched to 580 fs. Our experimental results indicate that both multiphoton ionization and impact ionization play important roles in the generation of conduction band electrons, at least they do so when the pump pulse durations are equal to or longer than 580 fs.


Proceedings of SPIE, the International Society for Optical Engineering | 2006

Femtosecond laser pulse induced damage in thin films

Haiyi Sun; Tianqing Jia; Xiaoxi Li; Chengbin Li; Donghai Feng; Shizhen Xu; Zhizhan Xu

We have investigated the damage for ZrO2/SiO2 800 nm 45° high-reflection mirror and MgF2/ZnS 800 nm interference filter with femtosecond pulses. The damage morphologies and evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. We also report their single-short damage thresholds for pulse durations ranging from 50 fs to 900 fs, which depart from the diffusion-dominated τ1/2 scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.


Lasers in Material Processing and Manufacturing II | 2005

Ablation mechanism of fused silica under femtosecond laser pulse

Shizhen Xu; Zhizhan Xu; Tianqing Jia; Haiyi Sun; Xiaoxi Li; Donghai Feng; Chengbin Li

Based on the avalanche model, the mechanism of femtosecond laser-induced ablation in fused silica was investigated. The three microscopic processes, including the production of conduction band electrons (CBE), the deposition of laser energy, and the diffusion of CBE and energy, were solved by a finite element method (FEM) of two-dimension cylinder coordinate. The conduction band electrons (CBE) were produced through photoionization and impact ionization, which were calculated via Keldysh theory and Double-flux model, respectively. The accumulated charge and the electrostatic field were also calculated, and the evolution of microexplosion was discussed based on this model. The results indicate that the CBE and energy diffusion plays an important role in the ablation of dielectrics by femtosecond laser pulse.


Optics Communications | 2007

Femtosecond laser ablation of crystals SiO2 and YAG

Shizhen Xu; Jianrong Qiu; Tianqing Jia; Chengbin Li; Haiyi Sun; Zhizhan Xu


Solid State Communications | 2005

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

Chengbin Li; Donghai Feng; Tianqing Jia; Haiyi Sun; Xiaoxi Li; Shizhen Xu; Xiaofeng Wang; Zhizhan Xu


Applied Physics A | 2007

Standing electron plasma wave mechanism of void array formation inside glass by femtosecond laser irradiation

Haiyi Sun; Juan Song; Chengbin Li; Jian Xu; Xinshun Wang; Ya Cheng; Zhizhan Xu; Jianrong Qiu; Tianqing Jia


Applied Surface Science | 2006

Femtosecond laser-induced damage in reflector

Haiyi Sun; Tianqing Jia; Xiaoxi Li; Chengbin Li; Donghai Feng; Shizhen Xu; Xiaochun Ge; Zhizhan Xu


Optics Communications | 2009

Direct writing waveguides inside YAG crystal by femtosecond laser

Shizhen Xu; Jianrong Qiu; Chengbin Li; Haiyi Sun; Zhizhan Xu


Optical Materials | 2006

Dynamics of femtosecond laser pulse induced damage in multilayers

Haiyi Sun; Tianqing Jia; Zhongchao Wei; Jianrong Qiu; Xiaoxi Li; Chengbin Li; Shizhen Xu; Donghai Feng; H. Z. Wang; Zhizhan Xu


European Physical Journal B | 2005

Polaronic correction to the first excited electronic energy level in an anisotropic semiconductor quantum dot

Donghai Feng; Z. Z. Xu; Tingting Jia; Xiuzhi Li; Chengbin Li; Huaijun Sun; Shizhen Xu

Collaboration


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Haiyi Sun

Chinese Academy of Sciences

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Shizhen Xu

Chinese Academy of Sciences

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Zhizhan Xu

Chinese Academy of Sciences

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Donghai Feng

East China Normal University

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Tianqing Jia

Chinese Academy of Sciences

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Xiaoxi Li

Chinese Academy of Sciences

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Xiaofeng Wang

Chinese Academy of Sciences

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Xiaochun Ge

Chinese Academy of Sciences

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H. Z. Wang

Sun Yat-sen University

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