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Dive into the research topics where Cheol Ho Lim is active.

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Featured researches published by Cheol Ho Lim.


Key Engineering Materials | 2005

Diffusion Bonding of Al 6061 Alloys Using an Eutectic Reaction of Al-Ag-Cu

Young Sup Lee; Cheol Ho Lim; C.H. Lee; K.W. Seo; Seung Yong Shin; Changhee Lee

In this study, a diffusion bonding of aluminium alloy A6061 was preformed using an Ag-28Cu filler metal in order to conduct eutectic brazing. Melting mechanism was surveyed. Interface behaviors of the brazed joints were observed after brazing and T6 solution treatment. Also, tensile property of the brazed joints was examined. During diffusion bonding of Al6061 alloys with Ag-28Cu filler metal, eutectic melts were formed by eutectic reaction between Al6061 and Ag-28Cu filler metal. It was found that the reaction layer consist of two phases formed at the interface between AA6061 and Ag-28Cu filler metal. EPMA analysis revealed that two phases in the reaction layers consist of Ag-rich phase and Cu-rich phase. Tensile strength was 300 MPa after ageing treatment at 175°C.


Materials Science Forum | 2004

Effect of Oxygen Content on Thermoelectric Properties of Sintered Bi-Te Based Compounds

Dong Choul Cho; Cheol Ho Lim; D.M. Lee; Seung Yong Shin; Chung Hyo Lee

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.


Materials Science Forum | 2006

Vacuum diffusion brazing of Al5052 alloys using Ag-28Cu insert metal

Young Sup Lee; Kyoung Won Seo; C.H. Lee; Cheol Ho Lim

In this study, we examined brazeability of Al5052 alloys using a Ag-28Cu insert metal in vacuum condition. A high frequency induction-heating vacuum hot press was used for the brazing. Under a static pressure of 0.5 MPa and a vacuum of 5×10-5 Torr, the temperature of hot press was raised up to brazing temperature (480-590°C) at a speed of 10°C/min and held at the brazing temperature for various times. Interface behaviors of the brazed joints were observed after brazing at 480-590°C by optical microscopy and Electron Probe Micro Analyzer (EPMA). Also, bonding strength of the brazed joints was examined. During vacuum brazing of Al5052 alloys with Ag-28Cu insert metal, eutectic melts were formed by eutectic reaction between Al5052 and Ag-28Cu insert metal at about 490°C. It was found that reaction layers of two phases are formed at the interface between Al5052 and Ag-28Cu insert. EPMA analysis revealed that two phases in the reaction layers consist of Ag-rich phase and Cu-rich phase. The bonding strength of the joints increased with brazing temperature and time. The highest bonding strength was 141 MPa at 580°C, 10min.


Materials Science Forum | 2007

Plasma etching for the application to low-k dielectrics devices

Jong Woo Lee; Hyoun Woo Kim; Jeong Whan Han; Mok Soon Kim; Byung Don Yoo; Mi-Song Kim; Chongmu Lee; Cheol Ho Lim; Sun Keun Hwang; C.H. Lee; Duck Jin Chung; Se-Geun Park; Seung Gol Lee; J.-G. Kim; Sung Pil Chang; Seunghun Lee; Seung Yong Chai; Wan In Lee; Sang Eon Park; Kyoung-Ho Kim; Dae-Kyu Choi; Chin-Wook Chung

We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.


Materials Science Forum | 2005

Orientation Distribution in Bi2Te3-Based Compound Prepared by Spark Plasma Sintering

Ki Tae Kim; Cheol Ho Lim; Yong Hwan Kim; Dong Choul Cho; Young Sup Lee; C.H. Lee

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders(PL) and small powders(PS). We could obtained the highest figure of merit(Zc) of 2.89×10-3/K in sintered compound mixed to PL:PS=80:20. This resulted from the increase of orientation by large powders(PS) and the reduce of pores by small powders. The figure of merit(Zc) of the sintered compound using only small powders(PS) showed lower value of 2.67×10-3/K compared with that of sintered compound mixed to PL:PS=80:20 due to the increase of electrical resistivity.


Materials Science Forum | 2005

Fabrication and Thermoelectric Properties of N-Type Bi2Te3 Based Compounds by Spark Plasma Sintering

D.M. Lee; Cheol Ho Lim; Dong Choul Cho; Seung Yong Shin; Won Seung Cho

N-type Bi2Te3 based thermoelectric compound was prepared by spark plasma sintering with a temperature range of 340~460°C and powder size of ~75㎛, 76~150㎛, 151~250㎛. Thermoelectric properties of the compound were measured as a function of the sintering temperature and powder size. With increasing sintering temperature, the electrical resistivity and thermal conductivity of the compound greatly changed because of the increase in relative density. The Seebeck coefficient and electrical resistivity were varied largely with increasing powder size. Therefore, the compound sintered at 460°C, with the powder of ~75㎛, showed a figure of merit of 2.44 x 10-3/K. Also, the bending strength was 75MPa.


Materials Science Forum | 2005

Fluxless Brazing of Al6061 Alloys Using Ag-28Cu Insert

Young Sup Lee; Chi-Hwan Lee; Cheol Ho Lim; Dong Choul Cho; Seung Yong Shin

A diffusion brazing of aluminium alloy A6061 was preformed using a Ag-28Cu insert to conduct eutectic brazing. Interface behaviors of the brazed joints were observed after brazing at 450-560°C. The tensile property of the brazed joints was also examined. During diffusion brazing of Al6061 alloys with Ag-28Cu insert, eutectic melts were formed by eutectic reaction between Al6061 and Ag-28Cu insert. It was found that the reaction layers composed of two phases were formed at the interface between Al6061 and Ag-28Cu insert. EPMA analysis revealed that two phases in the reaction layers consist of Ag-rich phase and Cu-rich phase. The tensile strength of the joints brazed at 560°C for 30min was 160 MPa.


Materials Science Forum | 2006

Microstructure and Thermoelectric Properties of P-Type Bi0.5Sb1.5Te3 Compounds Prepared by Spark Plasma Sintering

Won Seung Cho; Dong Choul Cho; Cheol Ho Lim; C.H. Lee; Woon Suk Hwang; Yeon-Chul Yoo

The microstructure and thermoelectrical properties of the 4wt% Te doped p-type Bi0.5Sb1.5Te3 compounds, fabricated by using spark plasma sintering in the temperature ranging from 250°C to 350°C, were characterized. The density of the sintered compounds was increased to 99.2% of theoretical density by carrying out the consolidation at 350oC for 2 min. The Seebeck coefficient, thermal conductivity and electrical resistivity were dependent on hydrogen reduction process and sintering temperature. The Seebeck coefficient increased with reduction process while the electrical resisitivity significantly decreased. Also, the electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that the carrier density and mobility vary with reduction process and sintering temperature. The highest figure of merit of 3.5×10-3/K was obtained for the compounds spark plasma sintered at 350°C for 2 min by using the hydrogen-reduced powders.


Materials Science Forum | 2005

Synthesis and Thermoelectric Properties of N-Type Bi2Te2.7Se0.3 Compounds by Spark Plasma Sintering

Dong Choul Cho; Cheol Ho Lim; Ki Tae Kim; Seung Yong Shin; Du-Hyung Lee; Young Sup Lee; C.H. Lee

Thermoelectric properties of the spark plasma sintered n-type Bi2Te2.7Se0.3 compounds were characterized with the sintering temperature, time and hydrogen reduction process. The Seebeck coefficient, electrical resistivity and thermal conductivity were dependent on hydrogen reduction process as well as sintering temperature. The Seebeck coefficient and electrical resistivity decreased and thermal conductivity increased with reduction treatment and sintering temperature. The results suggest that the carrier density varies with the dissolved oxygen and Te vacancies generated during the pulverization process. The highest figure of merit of 3.11×10-3/K was obtained for the compounds spark plasma sintered at 460°C for 16min by using the reduced powders.


Key Engineering Materials | 2005

Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

Cheol Ho Lim; Ki Tae Kim; Yong Hwan Kim; Dong Choul Cho; Young Sup Lee; C.H. Lee

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.

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