Dong ul Cho

Effects of annealing on the thermoelectric and microstructural properties of deformed n-type Bi2Te3-based compounds

We studied the effects of deformation and annealing of n-type 90Bi2Te3-5Sb2Te3-5Sb2Se3 thermoelectric compound. Hot-extrusion was conducted to prepare the deformed compound and then this compound was annealed at 400°C for 1–24 hr. When the undoped cast-ingot was extruded, the compound was changed from p-type to n-type due to the electrons generated during the extrusion process. For the compound extruded with SbI3-doped powders, the thermoelectric properties were also varied for the extrusion process. After annealing at 400°C more than 9 hr, the powder-extruded compound was recrystallized. This caused a decrease in carrier concentration and crystallographic anisotropy. In case of the compound extruded at the ratio of 10:1, the Seebeck coefficient α and the electrical resistivity ρ increased due to recrystallization. However, thermal conductivity κ of the compound decreased. This resulted in an increase in the figure-of-merit from 1.23 × 10−3 to 1.63 × 10−3 K−1.

Effect of Oxygen Content on Thermoelectric Properties of Sintered Bi-Te Based Compounds

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.

Microstructure and Mechanical Properties of DBC on Sputter Deposited Copper on Alumina Substrate

The process of Direct Bonding Copper (DBC) is performed by a spinel reaction between CuO and Al2O3. In order to develop DBC on alumina substrate with high bonding strength, alumina substrate was preformed as follows: Cu was sputter-deposited on alumina substrate. Sputter-Deposited Cu (SDC) on alumina substrate was oxidized at 673K for 30min in air atmosphere and then stabilized at 1273K for 30min in N2 gas atmosphere to improve bonding strtrength between preformed alumina substrate and SDC layer. Subsequently, the Cu-foil (300µm) was bonded on preformed-alumina substrate in N2 gas atmosphere at 1342~1345K. It was found that optimum condition of DBC on preformed-alumina substrate could be successfully obtained at 1345K for 30min. Consequently, bonding strength of DBC on alumina substrate was the high value of 80N/cm. Observation and analysis of microstructure for Cu sputtered DBC showed that reaction compounds such as CuAlO2 and CuAl2O4 approved to be formed in the vicinity of interface between Cu and alumina substrate.

Orientation Distribution in Bi2Te3-Based Compound Prepared by Spark Plasma Sintering

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders(PL) and small powders(PS). We could obtained the highest figure of merit(Zc) of 2.89×10-3/K in sintered compound mixed to PL:PS=80:20. This resulted from the increase of orientation by large powders(PS) and the reduce of pores by small powders. The figure of merit(Zc) of the sintered compound using only small powders(PS) showed lower value of 2.67×10-3/K compared with that of sintered compound mixed to PL:PS=80:20 due to the increase of electrical resistivity.

Fabrication and Thermoelectric Properties of N-Type Bi2Te3 Based Compounds by Spark Plasma Sintering

N-type Bi2Te3 based thermoelectric compound was prepared by spark plasma sintering with a temperature range of 340~460°C and powder size of ~75㎛, 76~150㎛, 151~250㎛. Thermoelectric properties of the compound were measured as a function of the sintering temperature and powder size. With increasing sintering temperature, the electrical resistivity and thermal conductivity of the compound greatly changed because of the increase in relative density. The Seebeck coefficient and electrical resistivity were varied largely with increasing powder size. Therefore, the compound sintered at 460°C, with the powder of ~75㎛, showed a figure of merit of 2.44 x 10-3/K. Also, the bending strength was 75MPa.

Fluxless Brazing of Al6061 Alloys Using Ag-28Cu Insert

A diffusion brazing of aluminium alloy A6061 was preformed using a Ag-28Cu insert to conduct eutectic brazing. Interface behaviors of the brazed joints were observed after brazing at 450-560°C. The tensile property of the brazed joints was also examined. During diffusion brazing of Al6061 alloys with Ag-28Cu insert, eutectic melts were formed by eutectic reaction between Al6061 and Ag-28Cu insert. It was found that the reaction layers composed of two phases were formed at the interface between Al6061 and Ag-28Cu insert. EPMA analysis revealed that two phases in the reaction layers consist of Ag-rich phase and Cu-rich phase. The tensile strength of the joints brazed at 560°C for 30min was 160 MPa.

Effect of Dopant on N-Type Bi2Te2.7Se0.3 Thermoelectric Materials Fabricated by Spark Plasma Sintering

The n-type Bi2Te2.7Se0.3 compounds were fabricated to investigate the characterization of spark plasma sintering with various SbI3 dopant contents. The Bi2Te2.7Se0.3 compounds with SbI3 dopant content is exhibited n-type conduction characterization, but the Bi2Te2.7Se0.3 compounds without SbI3 dopant content is exhibited p-type conduction characterization. The maximum Seebeck coeficient represented with 0.05wt.% SbI3 dopant content. The Seebeck coefficient of the sintered sample with increasing sintering temperature is increased from -158 to -182 μV/K. The electrical resistivity and thermal conductivity with 0.05wt.% SbI3 dopant content were 1.0 m and 1.33 W/mK, respectively.

Microstructure and Thermoelectric Properties of P-Type Bi0.5Sb1.5Te3 Compounds Prepared by Spark Plasma Sintering

The microstructure and thermoelectrical properties of the 4wt% Te doped p-type Bi0.5Sb1.5Te3 compounds, fabricated by using spark plasma sintering in the temperature ranging from 250°C to 350°C, were characterized. The density of the sintered compounds was increased to 99.2% of theoretical density by carrying out the consolidation at 350oC for 2 min. The Seebeck coefficient, thermal conductivity and electrical resistivity were dependent on hydrogen reduction process and sintering temperature. The Seebeck coefficient increased with reduction process while the electrical resisitivity significantly decreased. Also, the electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that the carrier density and mobility vary with reduction process and sintering temperature. The highest figure of merit of 3.5×10-3/K was obtained for the compounds spark plasma sintered at 350°C for 2 min by using the hydrogen-reduced powders.

Synthesis and Thermoelectric Properties of N-Type Bi2Te2.7Se0.3 Compounds by Spark Plasma Sintering

Thermoelectric properties of the spark plasma sintered n-type Bi2Te2.7Se0.3 compounds were characterized with the sintering temperature, time and hydrogen reduction process. The Seebeck coefficient, electrical resistivity and thermal conductivity were dependent on hydrogen reduction process as well as sintering temperature. The Seebeck coefficient and electrical resistivity decreased and thermal conductivity increased with reduction treatment and sintering temperature. The results suggest that the carrier density varies with the dissolved oxygen and Te vacancies generated during the pulverization process. The highest figure of merit of 3.11×10-3/K was obtained for the compounds spark plasma sintered at 460°C for 16min by using the reduced powders.

Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.