Cheol Hwan Park | Researchain

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european solid-state device research conference | 2006

New TIT Capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

Ho Jin Cho; Young-dae Kim; Dong Su Park; Euna Lee; Cheol Hwan Park; Jun Soo Jang; Keum Bum Lee; Hai Won Kim; Soo Jin Chae; Young Jong Ki; Il Keun Han; Yong Wook Song

New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO2 and amorphous phase Al2O3 in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5 Aring and low leakage current density of 0.35fA/cell, which meet leakage current criteria of 0.5fA/cell for mass production. ZAZ TIT capacitor showed smaller cap leak fail bit than HAH capacitor and stable leakage current up to 550degC anneal. TDDB (time dependent dielectric breakdown) behavior reliably satisfied the 10-year lifetime criteria within operation voltage range

Archive | 2004

Method for forming isolation layer of semiconductor device

Tae Hyeok Lee; Cheol Hwan Park; Dong Su Park; Ho Jin Cho; Eun A. Lee

Solid-state Electronics | 2007

New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs

Ho Jin Cho; Young-dae Kim; Dong Su Park; Euna Lee; Cheol Hwan Park; Jun Soo Jang; Keum Bum Lee; Hai Won Kim; Young Jong Ki; Il Keun Han; Yong Wook Song

Archive | 2010