Chi-Tsu Yuan

Distance dependence of energy transfer from InGaN quantum wells to graphene oxide

We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d² separation distance, which is dominated by the layer-to-layer dipole coupling.

Enhancement of light emission in GaAs epilayers with graphene quantum dots

A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml−1. On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.

Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots

We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photo-induced doping are promising for applications in GaN-based optoelectronic devices.

Efficient energy transfer from InGaN quantum wells to Ag nanoparticles

Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of the dipole interaction calculated from the Joule losses in acceptors. The maximum energy-transfer efficiency of this energy transfer system can be as high as 83%.

Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

Origins of excitation-wavelength-dependent photoluminescence in WS2 quantum dots

We report the photoluminescence studies of pristine and diethylenetriamine-doped (DETA-doped) WS2 quantum dots (QDs) synthesized by pulsed laser ablation. The DETA-doped WS2 QDs revealed a notable improvement of the luminescence quantum yield from 0.1% to 15.2% in comparison to pristine WS2 QDs. On the basis of the photoluminescence (PL) under different excitation wavelengths and the emission-energy dependence of PL dynamics, we suggest that the excitation-wavelength-dependent (excitation-wavelength-independent) PL for pristine (DETA-doped) WS2 QDs is attributed to the recombination of carriers from the localized (delocalized) states.

Correction: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Correction for ‘Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells’ by Svette Reina Merden Santiago et al., RSC Adv., 2018, 8, 15399–15404.

Efficient carrier transfer from graphene quantum dots to GaN epilayers

The photoluminescence (PL) properties in GaN epilayers were investigated after depositing graphene quantum dots (GQDs) on the GaN surface. A seven-fold enhancement of the PL intensity in GaN was observed in the GQD/GaN composite. On the basis of the PL dynamics, the enhancement of PL in GaN is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer is caused by the work function difference between GQDs and GaN, evidencing by Kelvin probe measurement. The improved PL is promising toward applications in the GaN-based optoelectronic devices.

Electron injection from graphene quantum dots to poly(amido amine) dendrimers

The steady-state and time-resolved photoluminescence (PL) are used to study the electron injection from graphene quantum dots (GQDs) to poly(amido amine) (PAMAM) dendrimers. The PL is enhanced by depositing GQDs on the surfaces of the PAMAM dendrimers. The maximum enhancement of PL with a factor of 10.9 is achieved at a GQD concentration of 0.9 mg/ml. The dynamics of PL in the GQD/PAMAM composite are analyzed, evidencing the existence of electron injection. On the basis of Kelvin probe measurements, the electron injection from the GQDs to the PAMAM dendrimers is accounted for by the work function difference between them.

Waveguide based energy transfer with gold nanoclusters for detection of hydrogen peroxide

H2O2 detection that uses fluorescence resonance energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding has been developed. Steady and time-resolved photoluminescence studies have been used to demonstrate the waveguide-based energy transfer. H2O2 detection is achieved by the quenching of the red emission from Au nanoclusters. Advantages of the sensing technique include the capability of visual detection and large area analysis.