Chia-Hua Chang

Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers.

The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property.

Frequency-Dependent Complex Conductivities and Dielectric Responses of Indium Tin Oxide Thin Films From the Visible to the Far-Infrared

Transparent and conducting indium tin oxide (ITO) thin films form an integral part for various optoelectronic devices. In this paper, we report the frequency-dependent complex conductivities and dielectric responses of several sputtered ITO thin films with thicknesses in the range of 189-962 nm by using terahertz time domain spectroscopy (THz-TDS), optical reflectance spectroscopy, and electrical measurements. The plasma frequencies are verified to be from 1590 to 1930 rad·THz, while the scattering times are in the range 6-7 fs based on the Drude free-electron model. The mobilities of the above ITO thin films are calculated to be 32.7-34.2 cm2 V-1 s-1, whereas the carrier concentrations lie in the range 2.79-4.10× 1020 cm-3. The electrical properties derived from the THz-TDS technique agree well with those determined by Hall measurement. Parameters for the complex dielectric function suitable for ITO in the range 0.2-2 and 4-450 THz are also determined.

Balanced carrier transport in organic solar cells employing embedded indium-tin-oxide nanoelectrodes

In this paper, we present evidence of balanced electron and hole transport in polymer-fullerene based solar cells by means of embedded indium-tin-oxide nanoelectrodes. Enabled by a controllable electrochemical deposition, the individual nanoelectrodes are uniformly enclosed by a poly(3,4-ethylenedioxythiophene) hole-conducting layer, allowing a relatively short route for holes to reach the anode and hence increasing the effective hole mobility. Consequently, the power conversion efficiency and photogenerated current are maximized with a deposition condition of 50u2002μC, where the ratio of the electron to hole mobility is nearly unity.

Combined micro- and nano-scale surface textures for enhanced near-infrared light harvesting in silicon photovoltaics

As silicon photovoltaics evolve towards thin-wafer technologies, efficient optical absorption for the near-infrared wavelengths has become particularly challenging. In this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near-infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on micro-grooved silicon substrates using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared by functioning as impedance matching layers with effective refractive indices gradually varying from 1 to 1.3. Materials with such unique refractive index characteristics are not readily available in nature. As a result, the solar cell with combined textures achieves over 90% external quantum efficiencies for a broad wavelength range of 460-980 nm, which is crucial to the development of advanced thin-substrate silicon solar cells.

Embedded indium-tin-oxide nanoelectrodes for efficiency and lifetime enhancement of polymer-based solar cells

In this paper, distinctive indium-tin-oxide (ITO) nanorods are employed to serve as buried electrodes for polymer-based solar cells. The embedded nanoelectrodes allow three-dimensional conducting pathways for low-mobility holes, offering a highly scaffolded cell architecture in addition to bulk heterojunctions. As a result, the power conversion efficiency of a polymer cell with ITO nanoelectrodes is increased to about 3.4% and 4.4% under one-sun and five-sun illumination conditions, respectively, representing an enhancement factor of up to ∼10% and 36% compared to a conventional counterpart. Also, the corresponding device lifetime is prolonged twice as much to about 110 min under five-sun illumination.

New infrared nonlinear optical crystal CsGeBr3: synthesis, structure and powder second-harmonic generation properties

An innovative infrared nonlinear optical crystal CsGeBr3 was synthesized. Ab initio calculations on CsGeBr3 were also carried out in order to analyse the second-order nonlinear susceptibilities. From its powder x-ray diffraction pattern, this crystal was characterized as a rhombohedral structure with an (R3m ,N o160) space group symmetry. The reflection powder second-harmonic generation (PSHG) measurement of CGBr showed that its nonlinear optical efficiency is 1.62 times larger than that of rhombohedral CsGeCl3 and is 9.63 times larger than that of KH2PO4 (KDP), and most important of all that CsGeBr3 is phase-matchable. The rescaled d (2) eff of CGBr was about 2.45 times larger than that of rhombohedral CsGeCl3 ,a nd this trend was coincident with the ab initio calculation results. The infrared transparent spectrum of rhombohedral CsGeBr3 was extended to more than 22.5 µm. The rhombohedral CsGeBr3 shows the potential in the realm of nonlinear optics and can be applied to the infrared region. (Some figures in this article are in colour only in the electronic version)

THz conductivities of indium-tin-oxide nanowhiskers as a graded-refractive-index structure

Indium-tin-oxide (ITO) nanowhiskers with attractive electrical and anti-reflection properties were prepared by the glancing-angle electron-beam evaporation technique. Structural and crystalline properties of such nanostructures were examined by scanning transmission electron microscopy and X-ray diffraction. Their frequency-dependent complex conductivities, refractive indices and absorption coefficients have been characterized with terahertz time-domain spectroscopy (THz-TDS), in which the nanowhiskers were considered as a graded-refractive-index (GRIN) structure instead of the usual thin film model. The electrical properties of ITO GRIN structures are analyzed and fitted well with Drude-Smith model in the 0.2~2.0 THz band. Our results indicate that the ITO nanowhiskers and its bottom layer atop the substrate exhibit longer carrier scattering times than ITO thin films. This signifies that ITO nanowhiskers have an excellent crystallinity with large grain size, consistent with X-ray data. Besides, we show a strong backscattering effect and fully carrier localization in the ITO nanowhiskers.

Non-Drude Behavior in Indium-Tin-Oxide Nanowhiskers and Thin Films Investigated by Transmission and Reflection THz Time-Domain Spectroscopy

A comparative study of indium-tin-oxide (ITO) nanowhiskers (NWhs) and thin films as transparent conductors in the terahertz frequency range are conducted. We employ both transmission-type and reflection-type terahertz time-domain spectroscopies (THz-TDTS and THz-TDRS) to explore the far-infrared optical properties of these samples. Their electrical properties, such as plasma frequencies and carrier scattering times, are analyzed and found to be fitted well by the Drude-Smith model over 0.1-1.4 THz. Further, structural and crystalline properties of samples are examined by scanning electron microscopy and X-ray diffraction, respectively. Non-Drude behavior of complex conductivities in ITO NWhs is attributed to carrier scattering from grain boundaries and impurity ions. In ITO thin films, however, the observed non-Drude behavior is ascribed to scattering by impurity ions only. Considering NWhs and thin films with the same height, mobility of the former is ~ 125 cm2V-1s-1, much larger than those of the ITO thin films, ~ 27 cm2 V-1 s-1. This is attributed to the longer carrier scattering time of the NWhs. The dc conductivities ( ~ 250 Ω-1 cm-1) or real conductivities in the THz frequency region of ITO NWhs is, however, lower than those of the ITO thin films ( ~ 800 Ω-1 cm-1) but adequate for use as electrodes. Partly, this is a reflection of the much higher plasma frequencies of thin films. Significantly, the transmittance of ITO NWhs ( ≅ 60%-70%) is much higher ( ≅ 13 times) than those of ITO thin films in the THz frequency range. The underneath basic physics is that the THz radiation can easily propagate through the air-space among NWhs. The superb transmittance and adequate electrical properties of ITO NWhs suggest their potential applications as transparent conducting electrodes in THz devices.

Enhanced angular characteristics of indium tin oxide nanowhisker-coated silicon solar cells.

Omnidirectional and broadband light harvesting is critical to photovoltaics due to the suns movement and its wide spectral range of radiation. In this work, we demonstrate distinctive indium-tin-oxide nanowhiskers that achieve superior angular and spectral characteristics for crystalline silicon solar cells using angle-resolved reflectance spectroscopy. The solar-spectrum weighted reflectance is well below 6% for incident angles of up to 70° and for the wavelength range between 400nm and 1000nm. As a result, the nanowhisker coated solar cell exhibits broadband quantum efficiency characteristics and enhanced short-circuit currents for large angles of incidence.

Cation substitution effects on structural, electronic and optical properties of nonlinear optical AgGa(SxSe1−x)2 crystals

The structural, electronic and optical properties of tetragonal nonlinear optical (NLO) crystals, AgGa(S x Se1−x )2 (x = 0.0, 0.25, 0.5, 0.75, and 1.0), were investigated theoretically and experimentally. The results obtained indicated that the electronic bandgaps, optical properties and bulk moduli of these compounds were linearly dependent on the substitution concentration of cations. From partial density of state analysis, it was found that the electronic states near the band edges of AgGa(Sx Se1−x )2 were a simple proportional mixture of the atomic orbitals of sulfur and selenium. A cell-volume effect was proposed as the major cause of the linear dependence of material properties on the substitution concentration. It was calculated that the second-order NLO susceptibilities were scaled with the cubi cp ower of bandgap, although a minor deviation existed. This deviation arose from the optical transition moment products.