Chieh Hsieh

Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling

The reduction in the external quantum efficiency (EQE) droop effect of an InGaN/GaN quantum-well (QW) light-emitting diode (LED) through the mechanism of surface plasmon (SP) coupling with QW is demonstrated. With a current spreading grid pattern on the mesa surface, a smaller grid period leads to more effective carrier transport into the QW regions of Ag deposition for stronger SP–QW coupling such that the droop effect is more significantly reduced, as indicated by the increase in injection current density of maximum EQE and the decrease in drooping slope. The claim of the SP–QW coupling effect in the samples of thin p-GaN is supported by the different droop behaviors of the LED samples fabricated with another epitaxial structure of thick p-GaN, in which the SP–QW coupling effect is expected to be weak.

Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode.

The experimental demonstrations of light-emitting diode (LED) fabrication with surface plasmon (SP) coupling with the radiating dipoles in its quantum wells are first reviewed. The SP coupling with a radiating dipole can create an alternative emission channel through SP radiation for enhancing the effective internal quantum efficiency when the intrinsic non-radiative recombination rate is high, reducing the external quantum efficiency droop effect at high current injection levels, and producing partially polarized LED output by inducing polarization-sensitive SP for coupling. Then, we report the theoretical and numerical study results of SP-dipole coupling based on a simple coupling model between a radiating dipole and the SP induced on a nearby Ag nanoparticle (NP). To include the dipole strength variation effect caused by the field distribution built in the coupling system (the feedback effect), the radiating dipole is represented by a saturable two-level system. The spectral and dipole-NP distance dependencies of dipole strength variation and total radiated power enhancement of the coupling system are demonstrated and interpreted. The results show that the dipole-SP coupling can enhance the total radiated power. The enhancement is particularly effective when the feedback effect is included and hence the dipole strength is increased.

Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering

The enhancement of output intensity, the generation of polarized output, and the reduction of the efficiency droop effect in a surface plasmon (SP) coupled vertical light-emitting diode (LED) with an Ag nano-grating structure located between the p-GaN layer and the wafer bonding metal for inducing SP coupling with the InGaN/GaN quantum wells (QWs) are demonstrated. In fabricating the vertical LED, the patterned sapphire substrate is removed with a photoelectrochemical liftoff technique. Based on the reflection measurement from the metal grating structure and the numerical simulation result, it is found that the localized surface plasmon (LSP) resonance induced around the metal grating crest plays the major role in the SP-QW coupling process although a hybrid mode of LSP and surface plasmon polariton can be generated in the coupling process. By adding a surface grating structure to the SP-coupled vertical LED on the n-GaN side, the output intensity is further enhanced, the output polarization ratio is further increased, and the efficiency droop effect is further suppressed.

Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays

The cross-sectional sizes of the regularly patterned GaN nanorods (NRs) and InGaN/GaN quantum-well (QW) NRs of different heights and different hexagon orientations, which are grown on the patterned templates of different hole diameters, pitches, and crystal orientations, are compared. It is found that the cross-sectional size of the GaN NR, which is formed with the pulsed growth mode, is mainly controlled by the patterned hole diameter, and the thickness of the sidewall QW structure is mainly determined by the NR height. The cross-sectional size variation of GaN NR is interpreted by the quasi-three-dimensional nature of atom supply amount for precipitating a two-dimensional disk-shaped NR segment. The variation of the sidewall QW structure is explained by the condition of constituent atom supply in the gap volume between the neighboring NRs. Also, we compare the cathodoluminescence emission wavelengths among those samples of different growth conditions. Generally speaking, the QW NR with a smaller height,...

Fabrication of surface metal nanoparticles and their induced surface plasmon coupling with subsurface InGaN/GaN quantum wells.

Based on the fabrication of Ag nanoparticles (NPs) with controlled geometry and surface density on an InGaN/GaN quantum well (QW) epitaxial structure, which contains indium-rich nano-clusters for producing localized states and free-carrier (delocalized) states in the QWs, and the characterization of their localized surface plasmon (LSP) coupling behavior with the carriers in the QWs, the interplay behavior of LSP coupling with carrier delocalization in the QWs is demonstrated. By using the polystyrene nanosphere lithography technique with an appropriate nanosphere size and adjusting the post-fabrication thermal annealing condition, the induced LSP resonance wavelength of the fabricated Ag NPs on the QW sample can match the QW emission wavelength for generating the coherent coupling between the carriers in the QWs and the induced LSP. The coupling leads to the enhancement of radiative recombination rate in the QWs and results in increased photoluminescence (PL) intensity, red-shifted PL spectrum, reduced PL decay time, and enhanced internal quantum efficiency. It is found that the observed effects are mainly due to the LSP coupling with the delocalized carriers in the QWs.

Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles

Further reduction of the efficiency droop effect and further enhancements of internal quantum efficiency (IQE) and output intensity of a surface plasmon coupled, blue-emitting light-emitting diode (LED) by inserting a dielectric interlayer (DI) of a lower refractive index between p-GaN and surface Ag nanoparticles are demonstrated. The insertion of a DI leads to a blue shift of the localized surface plasmon (LSP) resonance spectrum and increases the LSP coupling strength at the quantum well emitting wavelength in the blue range. With SiO2 as the DI, a thinner DI leads to a stronger LSP coupling effect, when compared with the case of a thicker DI. By using GaZnO, which is a dielectric in the optical range and a good conductor under direct-current operation, as the DI, the LSP coupling results in the highest IQE, highest LED output intensity, and weakest droop effect.

Modulation behaviors of surface plasmon coupled light-emitting diode.

The modulation bandwidths of the light-emitting diodes (LEDs) of different mesa sizes with and without surface plasmon (SP) coupling effect are compared. Due to the significant increase of carrier decay rate, within the size range of LED square-mesa from 60 through 300 micron and the injected current-density range from 139 through 1667 A/cm², the SP coupling can lead to the enhancement of modulation bandwidth by 44-48%, independent of the variations of LED mesa size or injected current level. The enhancement ratios of modulation bandwidth of the samples with SP coupling with respect to those of the samples without SP coupling are lower than the corresponding ratios of the square-root of photoluminescence decay rate due to the increases of their RC time constants (the product of device resistance and capacitance). The increases of the RC time constants in the samples with SP coupling are attributed to the increases of their device resistance levels when the Ag nanoparticles and GaZnO dielectric interlayer are added to the LED surface for effectively inducing SP coupling.

Vertical light-emitting diodes with surface gratings and rough surfaces for effective light extraction.

For enhancing the light extraction of a light-emitting diode, surface grating fabrication based on a simple method of combining photoelectrochemical (PEC) etching with phase mask interferometry has been demonstrated. To understand the optimum grating period in forming a surface grating on a vertical light-emitting diode (VLED), we construct a Llyods interferometer within PEC electrolyte (KOH) to fabricate surface gratings of various periods on VLEDs for comparing their light extraction efficiencies. Also, to compare the effectiveness of light extraction enhancement between surface grating and rough surface, VLEDs with the rough surfaces fabricated with two different KOH wet etching methods are fabricated. The comparisons of VLED characterizations show that among those grating VLEDs, the light extraction is more effective in a VLED of a smaller grating period. Also, compared with VLEDs of rough surfaces, the grating VLEDs of short grating periods (<2 μm) have the higher light extraction efficiencies, even though the root-mean-square roughness of the rough surface is significantly larger than the grating groove depth.

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode

The counteraction between the increased carrier localization effect due to the change of composition nanostructure in the quantum wells (QWs), which is caused by the thermal annealing process, and the enhanced quantum-confined Stark effect in the QWs due to the increased piezoelectric field, which is caused by the increased p-type layer thickness, when the p-type layer is grown at a high temperature on the InGaN/GaN QWs of a high-indium light-emitting diode (LED) is demonstrated. Temperature- and excitation power-dependent photoluminescence (PL) measurements are performed on three groups of sample, including 1) the samples with both effects of thermal annealing and increased p-type thickness, 2) those only with the similar thermal annealing process, and 3) those with increased overgrowth thickness and minimized thermal annealing effect. From the comparisons of emission wavelength, internal quantum efficiency (IQE), spectral shift with increasing PL excitation level, and calibrated activation energy of carrier localization between various samples in the three groups, one can clearly see the individual effects of thermal annealing and increased p-type layer thickness. The counteraction leads to increased IQE and blue-shifted emission spectrum with increasing p-type thickness when the thickness is below a certain value (20-nm p-AlGaN plus 60-nm p-GaN under our growth conditions). Beyond this thickness, the IQE value decreases and the emission spectrum red shifts with increasing p-type thickness.

Photoelectrochemical Liftoff of Patterned Sapphire Substrate for Fabricating Vertical Light-Emitting Diode

A low-cost large-area effective sapphire substrate liftoff method based on the photoelectrochemical (PEC) etching technique is demonstrated. By preparing patterned sapphire substrate (PSS) with 1-D periodic grooves and an epitaxial structure with the grooves preserved to form tunnels, PEC electrolyte can flow along the tunnels to etch the bottom of the GaN layer for separating the PSS from the wafer-bonded epitaxial layer. Assisted by the device isolation procedure, the PSS liftoff of a quarter-wafer sample can be completed in 8 min. After a smoothing process of the exposed N-face surface after liftoff, a vertical light-emitting diode (LED) is fabricated for comparing its characteristics with those of a conventional LED.