Chih-Chiang Yang

Impact of preparation condition of ZnO electron transport layer on performance of hybrid organic-inorganic light-emitting diodes

In this article, we have demonstrated the hybrid polymer light-emitting diodes (PLEDs) with a sol-gel derived or rf-sputtered ZnO electron transport layer (ETL). For the ZnO films prepared under different conditions, low annealing temperature (300u2009°C) leads to the film amorphous while the polycrystalline films is readily achieved by sputtering. Though the surface roughness can be improved by thermal annealing at 400u2009°C for sputtered films, the release of compressive stress after treatment has shrunk the optical band gap from 3.282 to 3.268u2009eV. As the ETL in PLEDs, the reduced band gap could increase potential barrier for electron injection and decrease the hole blocking capability. In our cases, luminance larger than 7000u2009cd/m2 can be obtained in device with pristine sputtered ZnO ETL. It is concluded that crystalline structure of ZnO films is important to facilitate the balance of carrier mobility to obtain high luminance and high efficiency devices.

Enhanced Field Emission Properties of Ag Nanoparticle-Decorated ZnO Nanorods Under Ultraviolet Illumination

In this paper, pure ZnO and Ag nanoparticle (NP)-decorated ZnO nanorods (NRs) were successfully synthesized via a low-temperature hydrothermal method. The as-prepared samples were characterized through high-resolution transmission electron microscopy and selected-area electron diffractometry. The enhanced field emission (FE) behavior of the Ag NP-decorated ZnO NRs along the [0002] crystal c-axis and their single-crystalline hexagonal structures were characterized with surface-protruding Ag NPs. The resulting FE in the dark and under ultraviolet illumination had low turn-ON electric fields of 3.93 and 2.04 V · μm-2, whereas the enhanced field enhancement factors were 1593 and 57872, respectively.

Novel Ga-ZnO Nanosheet Structures Applied in Ultraviolet Photodetectors

Vertically aligned Ga-doped ZnO (GZO) nanosheets were grown on a glass substrate using a low-temperature (90 °C) hydrothermal method. The average length and diameter of the nanosheets were ~720 and 26 nm, respectively. The GZO nanosheets exhibited wurtzite and monoclinic structures. A metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated for the GZO nanosheets. Results revealed that the photoresponses of the GZO UV PD were flat at short wavelengths. Meanwhile, a sharp cutoff was observed at 340 nm. The UV-to-visible rejection ratio of the fabricated PD was ~89 at 1 V bias voltage.

Noise Properties of Ag Nanoparticle-Decorated ZnO Nanorod UV Photodetectors

A novel and simple hydrothermal method was performed to synthesize vertically aligned Ag nanoparticle (NP)-decorated ZnO nanorods (NRs) on a seed layer/glass substrate. At an applied bias of 0.2 V and incident light wavelength of 380 nm, the measured fabricated photodetector (PD) responsivity value was ~12.4 A/W, whereas the corresponding UV to visible rejection ratio was ~4478. In addition, the noise equivalent power and corresponding detectivities of the fabricated Ag NPdecorated ZnO NR metal-semiconductor-metal (MSM) PD were 4.85 × 10^-11 W and 2.72 × 10¹¹ cm · Hz^0.5 · W^-1, respectively.

Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal Method

In this paper, we developed a simple hydrothermal method to synthesize vertically aligned ZnO:Al nanorods (NRs) to fabricate a UV photodetector (PD) on a seed layer/glass substrate. The photo-to-dark current ratio of the ZnO:Al NR PD was approximately <inline-formula> <tex-math notation=LaTeX>

The Effect of Ga Doping Concentration on the Low-Frequency Noise Characteristics and Photoresponse Properties of ZnO Nanorods-Based UV Photodetectors

1.4 times 10^{3}

Parametric investigation of the dirt spike generation in a pulsed metal vapor laser discharge

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Enhanced non-enzymatic glucose biosensor of Ga-doped ZnO nanorods

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Enhanced glucose biosensor properties of gold nanoparticle-decorated ZnO nanorods

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Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment

1.51 times 10^{3}