Ching-Chang Chung

Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors

Applications for integrated energy storage and pulse-power devices may have found opportunities in the emergence of the ferroelectric hafnium-zirconium oxide thin film system. To explore the boundaries of this material thin film system, 10 nm thick binary Hf0.5Zr0.5O2 (HZO) thin films are doped with Al or Si (Al or Si-doped HZO). The added dopants provide a distinct shift in behavior from ferroelectric to antiferroelectric characteristics. Si-doped Hf0.5Zr0.5O2 thin films exhibited a larger than 50 J/cm3 energy storage density with an efficiency of over 80%. The Si-doped Hf0.5Zr0.5O2 thin films were cycled 109 times up to 125 °C and maintained a robust 35 J/cm3 energy storage density and greater than 80% efficiency. Al-doped Hf0.5Zr0.5O2 thin films exhibited a larger switching field, leading to a smaller energy storage density and less robust cycling properties than Si-doped Hf0.5Zr0.5O2.

Mixed Al and Si doping in ferroelectric HfO2 thin films

Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm2 and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

CuNb1−xTaxO3 (x ≤ 0.25) solid solutions: impact of Ta(V) substitution and Cu(I) deficiency on their structure, photocatalytic, and photoelectrochemical properties

Solid solutions of Cu(I)-containing oxide p-type semiconductors provide key opportunities to probe the fundamental relationships between chemical compositions and crystal structures, bandgap sizes, band energies, and photoelectrochemical properties. Members of the CuNb1−xTaxO3 (0 < x ≤ 0.25) solid solution have been synthesized via high temperature solid-state methods. The structure of CuNbO3 was found to be Cu-deficient Cu0.965NbO3 after heating in air at 250 °C for 3 hours, i.e., under similar conditions as those used to prepare it as a polycrystalline film. Powder X-ray diffraction techniques confirmed the purity of each composition up to x ≤ 0.25 and the lattice parameters were refined as the molar ratio of Nb(V) and Ta(V) was varied (a = 9.499 to 9.506 A, b = 8.439 to 8.451 A, c = 6.768 to 6.781 A and β = 90.847 to 90.694°). An increase in the amount of Ta(V) yielded a small blue shift of the bandgap size from ∼1.89 eV to ∼1.97 eV for CuNb1−xTaxO3 from x = 0 to 0.25. Polycrystalline films of each member of the CuNb1−xTaxO3 solid solutions produced relatively comparable p-type photocurrents of up to −0.5 mA cm−2, while the stability of the cathodic photocurrent also remained similar with increasing Ta(V) content. Mott–Schottky analysis of CuNb1−xTaxO3 showed that the conduction band edge of −1.5 (vs. SHE) provides a sufficient overpotential (∼800 mV) to drive the reduction of water to hydrogen gas at the surface. The capability of the solid solutions to drive hydrogen production was confirmed through suspended particle photocatalysis. Further characterization of the CuNb0.91Ta0.09O3 composition included scanning electron microscopy, X-ray photoelectron spectroscopy, and thermogravimetric analyses. These data show that Cu(I) is oxidized to Cu(II) as CuNb1−xTaxO3 is heated in air. Thus, the formation of Cu(II) rich regions at the surface, together with the Ta(V) content, are found to play important roles in the stability and magnitude of the cathodic photocurrents produced under visible-light irradiation. Importantly, these results demonstrate that solid solution compositions can be used in films for solar energy conversion, notwithstanding their inherent atomic disorder.

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However, no comprehensive overview that links structural properties to the electrical performance of the films in detail is available for lanthanide-doped hafnia. La:HfO2 appears to be a material with a broad window of process parameters, and accordingly, by optimization of the La content in the layer, it is possible to improve the performance of the material significantly. Variations of the La concentration leads to changes in the crystallographic structure in the bulk of the films and at the interfaces to the electrode materials, which impacts the spontaneous polarization, internal bias fields, and with this the field cycling behavior of the capacitor structure. Characterization results are compared to other dopants like Si, Al, and Gd to validate the advantages of the material in applications such as semiconductor memory devices.

Electrochemical Intercalation of Mg2+ into Anhydrous and Hydrated Crystalline Tungsten Oxides

The reversible intercalation of multivalent cations, especially Mg2+, into a solid-state electrode is an attractive mechanism for next-generation energy storage devices. These reactions typically exhibit poor kinetics due to a high activation energy for interfacial charge-transfer and slow solid-state diffusion. Interlayer water in V2O5 and MnO2 has been shown to improve Mg2+ intercalation kinetics in nonaqueous electrolytes. Here, the effect of structural water on Mg2+ intercalation in nonaqueous electrolytes is examined in crystalline WO3 and the related hydrated and layered WO3·nH2O (n = 1, 2). Using thin film electrodes, cyclic voltammetry, Raman spectroscopy, X-ray diffraction, and electron microscopy, the energy storage in these materials is determined to involve reversible Mg2+ intercalation. It is found that the anhydrous WO3 can intercalate up to ∼0.3 Mg2+ (75 mAh g-1) and can maintain the monoclinic structure for at least 50 cycles at a cyclic voltammetry sweep rate of 0.1 mV s-1. The kinetics of Mg2+ storage in WO3 are limited by solid-state diffusion, which is similar to its behavior in a Li+ electrolyte. On the other hand, the maximum capacity for Mg2+ storage in WO3·nH2O is approximately half that of WO3 (35 mAh g-1). However, the kinetics of both Mg2+ and Li+ storage in WO3·nH2O are primarily limited by the interface and are thus pseudocapacitive. The stability of the structural water in WO3·nH2O varies: the interlayer water of WO3·2H2O is removed upon exposure to a nonaqueous electrolyte, while the water directly coordinated to W is stable during electrochemical cycling. These results demonstrate that tungsten oxides are potential candidates for Mg2+ cathodes, that in these materials structural water can lead to improved Mg2+ kinetics at the expense of capacity, and that the type of structural water affects stability.

Li0.33La0.557TiO3 ceramic nanofiber-enhanced polyethylene oxide-based composite polymer electrolytes for all-solid-state lithium batteries

A polyethylene oxide (PEO)-based composite solid polymer electrolyte filled with one-dimensional (1D) ceramic Li0.33La0.557TiO3 (LLTO) nanofibers was designed and prepared. It exhibits a high ionic conductivity of 2.4 × 10−4 S cm−1 at room temperature and a large electrochemical stability window of up to 5.0 V vs. Li/Li+, and is a promising electrolyte candidate for all solid-state lithium batteries.

Local structural behavior of PbZr0.5Ti0.5O3 during electric field application via in situ pair distribution function study

The local structural behavior of PbZr0.5Ti0.5O3 (PZT 50/50) ceramics during application of an electric field was investigated using pair distribution function (PDF) analysis. In situ synchrotron total scattering was conducted, and the PDFs were calculated from the Fourier transform of the total scattering data. The PDF refinement of the zero-field data suggests a local-structure model with [001] Ti-displacement and negligible Zr-displacement. The directional PDFs at different field amplitudes indicate the bond-length distribution of the nearest Pb-B (B = Zr/Ti) pair changes significantly with the field. The radial distribution functions (RDFs) of a model for polarization rotation were calculated. The calculated and the experimental RDFs are consistent. This result suggests the changes in Pb-B bond-length distribution could be dominantly caused by polarization rotation. Peak fitting of the experimental RDFs was also conducted. The peak position trends with increasing field are mostly in agreement with the ...

Dielectric and piezoelectric properties of 0.7 Pb(Mg1/3Nb2/3)O3-0.3 PbTiO3 single crystal poled using alternating current

ABSTRACT In this paper, 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-30%PT) single crystal samples were poled using an alternating current (electric field) poling (ACP) method. Compared to the traditional poling method, the piezoelectric coefficient, free and clamped dielectric constants were improved more than 21%. X-ray diffraction result suggests the existence of monoclinic phase (MA) in ACP samples and piezoresponse force microscopy (PFM) result further depicts the finer engineered domain structures. The ACP sample also showed the unique phase transition sequences during the depoling process. Our work could provide a novel domain engineered method to enhance piezoelectric properties of PMN-PT single crystal. GRAPHICAL ABSTRACT IMPACT STATEMENT Piezoelectric and dielectric properties of relaxor-PT single crystals can be significantly enhanced by employing the new alternating current poling method, attributing to the unique heterogenous domain structure containing unprecedented domain wall density.