Jacob L. Jones

Evolving morphotropic phase boundary in lead-free (Bi1/2Na1/2)TiO3–BaTiO3 piezoceramics

The correlation between structure and electrical properties of lead-free (1−x)(Bi1/2Na1/2)TiO3–xBaTiO3 (BNT-100xBT) polycrystalline piezoceramics was investigated systematically by in situ synchrotron diffraction technique, combined with electrical property characterization. It was found that the morphotropic phase boundary (MPB) between a rhombohedral and a tetragonal phase evolved into a morphotropic phase region with electric field. In the unpoled material, the MPB was positioned at the transition from space group R3m to P4mm (BNT-11BT) with optimized permittivity throughout a broad single-phase R3m composition regime. Upon poling, a range of compositions from BNT-6BT to BNT-11BT became two-phase mixture, and maximum piezoelectric coefficient was observed in BNT-7BT. It was shown that optimized electrical properties are related primarily to the capacity for domain texturing and not to phase coexistence.

Electric-field-induced phase transformation at a lead-free morphotropic phase boundary: Case study in a 93%(Bi0.5Na0.5)TiO3–7% BaTiO3 piezoelectric ceramic

The electric-field-induced strain in 93%(Bi0.5Na0.5)TiO3–7%BaTiO3 polycrystalline ceramic is shown to be the result of an electric-field-induced phase transformation from a pseudocubic to tetragonal symmetry. High-energy x-ray diffraction is used to illustrate the microstructural nature of the transformation. A combination of induced unit cell volumetric changes, domain texture, and anisotropic lattice strains are responsible for the observed macroscopic strain. This strain mechanism is not analogous to the high electric-field-induced strains observed in lead-based morphotropic phase boundary systems. Thus, systems which appear cubic under zero field should not be excluded from the search for lead-free piezoelectric compositions.

Advances in lead-free piezoelectric materials for sensors and actuators.

Piezoelectrics have widespread use in today’s sensor and actuator technologies. However, most commercially available piezoelectric materials, e.g., Pb [ZrxTi1−x] O3 (PZT), are comprised of more than 60 weight percent lead (Pb). Due to its harmful effects, there is a strong impetus to identify new lead-free replacement materials with comparable properties to those of PZT. This review highlights recent developments in several lead-free piezoelectric materials including BaTiO3, Na0.5Bi0.5TiO3, K0.5Bi0.5TiO3, Na0.5K0.5NbO3, and their solid solutions. The factors that contribute to strong piezoelectric behavior are described and a summary of the properties for the various systems is provided.

Monoclinic crystal structure of polycrystalline Na0.5Bi0.5TiO3

Bismuth-based ferroelectric ceramics are currently under intense investigation for their potential as Pb-free alternatives to lead zirconate titanate-based piezoelectrics. Na0.5Bi0.5TiO3 (NBT), one of the widely studied compositions, has been assumed thus far to exhibit the rhombohedral space group R3c at room temperature. High-resolution powder x-ray diffraction patterns, however, reveal peak splitting in the room temperature phase that evidence the true structure as monoclinic with space group Cc. This peak splitting and Cc space group is only revealed in sintered powders; calcined powders are equally fit to an R3c model because microstructural contributions to peak broadening obscure the peak splitting.

The role of spontaneous polarization in the negative thermal expansion of tetragonal PbTiO3-based compounds

PbTiO(3)-based compounds are well-known ferroelectrics that exhibit a negative thermal expansion more or less in the tetragonal phase. The mechanism of negative thermal expansion has been studied by high-temperature neutron powder diffraction performed on two representative compounds, 0.7PbTiO(3)-0.3BiFeO(3) and 0.7PbTiO(3)-0.3Bi(Zn(1/2)Ti(1/2))O(3), whose negative thermal expansion is contrarily enhanced and weakened, respectively. With increasing temperature up to the Curie temperature, the spontaneous polarization displacement of Pb/Bi (δz(Pb/Bi)) is weakened in 0.7PbTiO(3)-0.3BiFeO(3) but well-maintained in 0.7PbTiO(3)-0.3Bi(Zn(1/2)Ti(1/2))O(3). There is an apparent correlation between tetragonality (c/a) and spontaneous polarization. Direct experimental evidence indicates that the spontaneous polarization originating from Pb/Bi-O hybridization is strongly associated with the negative thermal expansion. This mechanism can be used as a guide for the future design of negative thermal expansion of phase-transforming oxides.

Entropy-stabilized oxides.

Configurational disorder can be compositionally engineered into mixed oxide by populating a single sublattice with many distinct cations. The formulations promote novel and entropy-stabilized forms of crystalline matter where metal cations are incorporated in new ways. Here, through rigorous experiments, a simple thermodynamic model, and a five-component oxide formulation, we demonstrate beyond reasonable doubt that entropy predominates the thermodynamic landscape, and drives a reversible solid-state transformation between a multiphase and single-phase state. In the latter, cation distributions are proven to be random and homogeneous. The findings validate the hypothesis that deliberate configurational disorder provides an orthogonal strategy to imagine and discover new phases of crystalline matter and untapped opportunities for property engineering.

Characterization of domain structures from diffraction profiles in tetragonal ferroelastic ceramics

The underlying domain structures of ferroelastic ceramics have a large influence on their macroscopic electromechanical properties. The profile shape functions of certain pseudo-cubic peaks in diffraction patterns collected from these materials can provide a great deal of information about such domain structures. Using both constant-wavelength neutron and high-energy synchrotron x-ray diffraction, profile shape functions of the pseudo-cubic 002 reflection are evaluated in a soft, tetragonal PZT ceramic. Errors in the integrated intensity ratio, important for measuring the degree of domain boundary movement in these materials, are subject to further scrutiny. It is shown that an asymmetric Pearson VII type distribution, integrated numerically between reasonable limits, gives the most accurate value of relative domain populations in these materials. It is also shown that the diffuse scattering caused by ferroelastic domain walls may be used to estimate the amount of material that is affected by microstrains originating at these walls.

Phase transition sequence in sodium bismuth titanate observed using high-resolution x-ray diffraction

High resolution powder x-ray diffraction patterns of Na0.5Bi0.5TiO3 at selected temperatures were examined to compare structural changes with observed piezoelectric thermal depoling temperatures. The depoling temperatures do not correlate with discrete phase transition temperatures, and therefore, a structural transition is not the origin of thermal depoling. Rather, a correlation is made with an increase in volume fraction of material which does not obey the long-range Cc space group. The origin of the thermal depoling behavior may be the loss of long-range ferroelectric order by a decreasing proportion of the Cc phase or the associated percolation of disordered nano-scale platelets.

Structure and phase transitions in 0.5(Ba0.7Ca0.3TiO3)-0.5(BaZr0.2Ti0.8O3) from −100 °C to 150 °C

The solid solution of (x)Ba0.7Ca0.3TiO3-(1-x)BaZr0.2Ti0.8O3 is known to exhibit high piezoelectric constants. Discrepancies in the reported phase transitions and structure around room temperature, however, have complicated the understanding of the enhanced properties. Rietveld refinement of high-resolution X-ray diffraction is employed here to establish and refine the crystallographic structure at temperatures from −100 °C to 150 °C for x = 0.5. A combination of rhombohedral R3m and tetragonal P4mm is found to coexist at temperatures of 20 °C and −25 °C, bordered by single phase rhombohedral and tetragonal regions at lower (i.e., −100 °C) and higher (i.e., 70 °C) temperatures, respectively. The diffractograms also show signs of strain and domain wall scattering that are linked to the sample history.

Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

Ferroelectric HfO2 is an attractive candidate for future ferroelectric random access memory devices due to its compatibility with the complementary metal-oxide-semiconductor process, conformal deposition, and scaling ability. Crystallization of HfO2 with different dopants and annealing conditions can produce the stabilization of the monoclinic, tetragonal, cubic, or orthorhombic crystal phases. In this work, the authors observe ferroelectric behavior in Si-doped hafnium oxide with TiN and Ir electrodes. Atomic layer deposited 10 nm HfO2 capacitors doped with varying concentrations of SiO2 have been fabricated in the metal–ferroelectric–insulator–semiconductor (MFIS) structure. The ferroelectric characteristics of thin film HfO2 are compared in the MFIS and metal–ferroelectric–metal configurations. Post-metallization anneals were applied to all thin film ferroelectric HfO2 capacitors, resulting in a remanent polarization of up to 22 μC/cm2 and a range of observed coercive voltages, emphasizing the importan...