Chris Stapelmann

Stress Memorization Technique—Fundamental Understanding and Low-Cost Integration for Advanced CMOS Technology Using a Nonselective Process

In this paper, a comprehensive work toward the understanding of the stress memorization technique (SMT) is presented. The effects of the SMT upon PMOS and NMOS device performance are investigated and explained. A novel low-cost solution for a maskless SMT integration into advanced CMOS technologies is proposed, and additional device results examining the compatibility of SMT with fully silicided and metal inserted polysilicon gates are presented.

Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance

In the present work, a high aspect ratio process (HARP) using a new O3/TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65-nm CMOS. Good gapfill performance up to aspect ratios greater than 10:1 was demonstrated. Since the HARP process does not attack the STI liner as compared to HDP, a variety of different STI liners can be implemented. By comparing HARP with HDP, the geometry dependence of nand p-FET performance due to STI stress is discussed

On the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon

An effective and process optimized method to suppress transient enhanced diffusion is proposed. The method presented consists of designing a vacancy-type defect region which effectively blocks the flux of interstitials from the end of range region towards the surface of the substrate. This band of vacancy-type defects is produced by high dose F+ coimplants. We provide a detailed microstructure study of the vacancy-type defect evolution and demonstrate that under optimum conditions, the vacancy-type defects effectively suppress transient enhanced diffusion, boron deactivation, and end of range defects. We also show the process conditions to obtain an effective interstitial barrier without introducing other detrimental diffusion effects.