Christoph Siegert

Low temperature transport in undoped mesoscopic structures

Undoped GaAs/AlGaAs heterostructures in which carriers are attracted from the Ohmic contacts by a voltage bias on an insulated top gate allows higher mobilities to be obtained at lower electron densities than is possible with modulation doped heterostructures. However a two level gating scheme and an Ohmic contacting process that maximizes lateral diffusion are necessary to fully exploit the advantages of the undoped system for fabricating lower dimensional mesoscopic structures. Ionized background impurities (at low densities) and interface roughness (at high densities) are found to be the dominant sources of scattering. An approximate length scale set by the number of impurities the interfacial wave function intersects is observed in the magnetoconductance of two-dimensional mesoscopic regions.

Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I (V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I (V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

Highly Enhanced Thermopower in Two-Dimensional Electron Systems at Millikelvin Temperatures

We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional nonmagnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 microV/K, thus exceeding the free electron estimate by more than 2 orders of magnitude. With support from a parallel study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.

Thermoelectric properties of electrostatically tunable antidot lattices

We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are observed. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL.

Signatures of an anomalous Nernst effect in a mesoscopic two-dimensional electron system

We investigate the Nernst effect in a mesoscopic two-dimensional electron system (2DES) at low magnetic fields, before the onset of Landau level quantization. The overall magnitude of the Nernst signal agrees well with semiclassical predictions. We observe reproducible mesoscopic fluctuations in the signal that diminish significantly with an increase in temperature. We also show that the Nernst effect exhibits an anomalous component that is correlated with an oscillatory Hall effect. This behavior may be able to distinguish between different spin-correlated states in the 2DES.

Electrostatic modulation of periodic potentials in a two-dimensional electron gas: from antidot lattice to quantum dot lattice

We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.

Field-tunable magnetic phases in a semiconductor-based two-dimensional Kondo lattice

We show the existence of intrinsic localized spins in mesoscopic high-mobility GaAs/AlGaAs heterostructures. Non-equilibrium transport spectroscopy reveals a quasi-regular distribution of the spins, and indicates that the spins interact indirectly via the conduction electrons. The interaction between spins manifests itself in a characteristic zero-bias anomaly near the Fermi energy, and indicates gate voltage-controllable magnetic phases in high-mobility heterostructures. To address this issue further, we have also designed electrostatically tunable Hall devices, that allow a probing of Hall characteristics at the active region of the mesoscopic devices. We show that the zero field Hall coefficient has an anomalous contribution, which can be attributed to scattering by the localized spins. The anomalous contribution can be destroyed by an increase in temperature, source-drain bias, or field range.