Christopher E. Valdivia

Antireflection Coating Design for Triple-Junction III–V/Ge High-Efficiency Solar Cells Using Low Absorption PECVD Silicon Nitride

The design of antireflection coating (ARC) for multijunction solar cells is challenging due to the broadband absorption and the need for current matching of each subcell. Silicon nitride, which is deposited by plasma-enhanced chemical vapor deposition (PECVD) using standard conditions, is widely used in the silicon wafer solar cell industry but typically suffers from absorption in the short-wavelength range. We propose the use of silicon nitride deposited by low-frequency PECVD (LFSiN) optimized for high refractive index and low optical absorption as a part of the ARC design for III–V/Ge triple-junction solar cells. This material can also act as a passivation/encapsulation coating. Simulations show that the SiO

Optimization of antireflection coating design for multijunction solar cells and concentrator systems

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Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

/LFSiN double-layer ARC can be very effective in reducing the reflection losses over the wavelength range of the limiting subcell for top subcell-limited, as well as middle subcell-limited, triple-junction solar cells. We also demonstrate that the structure’s performance is stable over expected variations in the layer parameters (thickness and refractive index) in the vicinity of the optimal values.

Five-volt vertically-stacked, single-cell GaAs photonic power converter

Photovoltaic solar cells are a route towards local, environmentally benign, sustainable and affordable energy solutions. Antireflection coatings are necessary to input a high percentage of available light for photovoltaic conversion, and therefore have been widely exploited for silicon solar cells. Multi-junction III-V semiconductor solar cells have achieved the highest efficiencies of any photovoltaic technology, yielding up to 40% in the laboratory and 37% in commercial devices under varying levels of concentrated light. These devices benefit from a wide absorption spectrum (300- 1800 nm), but this also introduces significant challenges for antireflection coating design. Each sub-cell junction is electrically connected in series, limiting the overall device photocurrent by the lowest current-producing junction. Therefore, antireflection coating optimization must maximize the current from the limiting sub-cells at the expense of the others. Solar concentration, necessary for economical terrestrial deployment of multi-junction solar cells, introduces an angular-dependent irradiance spectrum. Antireflection coatings are optimized for both direct normal incidence in air and angular incidence in an Opel Mk-I concentrator, resulting in as little as 1-2% loss in photocurrent as compared to an ideal zero-reflectance solar cell, showing a similar performance to antireflection coatings on silicon solar cells. A transparent conductive oxide layer has also been considered to replace the metallic-grid front electrode and for inclusion as part of a multi-layer antireflection coating. Optimization of the solar cell, antireflection coating, and concentrator system should be considered simultaneously to enable overall optimal device performance.

Luminescent coupling in planar opto-electronic devices

Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting volt...

AlGaAs tunnel junction for high efficiency multi-junction solar cells: Simulation and measurement of temperature-dependent operation

The high-efficiency conversion of photonic power into electrical power is of broad-range applicability to many industries due to its electrical isolation from the surrounding environment and immunity to electromagnetic interference which affects the performance and reliability of sensitive electronics. A photonic power converter, or phototransducer, can absorb several watts of infrared laser power transmitted through a multimode fiber and convert this to electrical power for remote use. To convert this power into a useful voltage, we have designed, simulated, and fabricated a photovoltaic phototransducer that generates >5 V using a monolithic, lattice-matched, vertically-stacked, single-cell device that eliminates complex fabrication and assembly steps. Experimental measurements have demonstrated a conversion efficiency of up to 60.1% under illumination of ~11 W/cm2 at a wavelength of 835 nm, while simulations indicate that efficiencies reaching 70% should be realistically achievable using this novel design.

Efficiency Measurements and Simulations of GaInP/InGaAs/Ge Quantum Dot Enhanced Solar Cells at up to 1000‐Suns Under Flash and Continuous Concentration

Effects of luminescent coupling are observed in monolithic 5 V, five-junction GaAs phototransducers. Power conversion efficiency was measured at 61.6% ± 3% under the continuous, monochromatic illumination for which they were designed. Modeling shows that photon recycling can account for up to 350 mV of photovoltage in these devices. Drift-diffusion based simulations including a luminescent coupling term in the continuity equation show a broadening of the internal quantum efficiency curve which agrees well with experimental measurements. Luminescent coupling is shown to expand the spectral bandwidth of the phototransducer by a factor of at least 3.5 for devices with three or more junctions, even in cases where multiple absorption/emission events are required to transfer excess carriers into the limiting junction. We present a detailed description of the novel luminescent coupling modeling technique used to predict these performance enhancements.

Measurement of high efficiency 1 cm 2 AlGaInP/InGaAs/Ge solar cells with embedded InAs quantum dots at up to 1000 suns continuous concentration

AlGaAs tunnel junctions are shown to be well-suited to concentrated photovoltaics where temperatures and current densities can be dramatically higher than for 1-sun flat-panel systems. Detailed comparisons of AlGaAs/AlGaAs tunnel junction experimental measurements over a range of temperatures expected during device operation in concentrator systems are presented. Experimental and simulation results are compared in an effort to decouple the tunnel junction from the overall multi-junction solar cell. The tunnel junction resistance is experimentally studied as a function of the temperature to determine its contribution to overall efficiency of the solar cell. The current-voltage behavior of the isolated TJ shows that as the temperature is increased from 25°C to 85°C, the resistance decreases from ~4.7×10-4 ¿·cm2 to ~0.3×10-4 ¿·cm2 for the operational range of a multi-junction solar cell under concentration.

Performance impact of luminescent coupling on monolithic 12-junction phototransducers for 12 V photonic power systems

Quantum dot (QD) enhanced GaInP/InGaAs/Ge solar cells are presented and characterized under flash and continuous solar simulators. InAs QD within the middle sub‐cell increase the carrier generation due to absorption in the range 900–940 nm. These QD‐enhanced solar cells routinely achieve production efficiencies of ∼40%, and this set of research samples obtain a peak efficiency of >38% under flash solar simulators. Continuous solar simulator testing is performed to test the QD‐enhanced solar cells under thermal loads similar to concentrated photovoltaic systems, in which cells demonstrate excellent reliability. Numerical simulations of the QD‐enhanced solar cells are performed using an effective medium to model the additional absorption due to the QD layers. Temperature dependence of the QD‐enhanced solar cells are modeled, in which temperature‐dependent bandgap narrowing changes the dark current and the semiconductor absorption profiles. Comparison between the experimental results and numerical model show...

Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent

Large commercial-grade 1 cm2 quantum dot enhanced triple-junction AlGaInP/InGaAs/Ge solar cells were characterized using high-concentration flash and continuous-illumination solar simulators. Cyrium Technologies Incorporated (Cyrium™) routinely achieves >40% efficiency under ∼500 suns flash illumination at 25°C using its QDEC™ product line based on this design. For this research project, Cyrium used its Application-Specific Concentrator Cell (ASCC) program to design and manufacture CPV cells with such quantum dot layers in the middle sub-cell of a triple-junction configuration. The high quality of the dislocation-free quantum dot layers used in such structures has been confirmed by photoluminescence, transmission electron microscopy, and quantum efficiency measurements. Receiver devices have been successfully tested up to ∼950 suns of continuous illumination, producing currents >13 A from a 1 cm2 cell. Continuous-illumination testing produced temperatures reaching >90°C above ambient at solar concentrations of >800 suns under some thermal coupling conditions. As a result, ASCC cells that achieved >38% efficiency at standard test conditions of 25°C under flash solar simulators measured 34–37% at high operating temperature under continuous illumination of up to 800 suns with the thermal resistance of the assembly used. These results show that it is essential to develop rigorous thermal management in a real-world concentrator system, for which continuous solar simulators are invaluable tools for testing prior to field deployment.