Chuan-Pu Liu

Evidence of oxygen vacancy enhanced room-temperature ferromagnetism in Co-doped ZnO

The annealing effects on structure and magnetism for Co-doped ZnO films under air, Ar, and Ar∕H2 atmospheres at 250°C have been systematically investigated. Room-temperature ferromagnetism has been observed for the as-deposited and annealed films. However, the saturation magnetization (Ms) varied drastically for different annealing processes with Ms∼0.5, 0.2, 0.9, and 1.5μB∕Co for the as-deposited, air-annealed, Ar-annealed, and Ar∕H2-annealed films, respectively. The x-ray absorption spectra indicate all these samples show good diluted magnetic semiconductor structures. By comparison of the x-ray near edge spectra with the simulation on Zn K edge, an additional preedge peak appears due likely to the formation of oxygen vacancies. The results show that enhancement (suppression) of ferromagnetism is strongly correlated with the increase (decrease) of oxygen vacancies in ZnO. The upper limit of the oxygen vacancy density of the Ar∕H2-annealed film can be estimated by simulation to be about 1×1021cm−3.

ZnO nanopencils: Efficient field emitters

ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550 ° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20–30 nm. High-resolution transmission electron microscopy shows that the nanopencils were single crystals growing along the [0001] direction and the pen tips subtend a small angle with multiple surface perturbations. Field-emission measurements on the nanopencils show a low turn-on field of 3.7V∕μm at a current density of 10μA∕cm2. The emission current density reached 1.3mA∕cm2 at an applied field of 4.6V∕μm. The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils.

Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

Recent advances in the development of microplasma devices fabricated in a variety of materials systems (Si, ceramic multilayers, and metal/polymer structures) and configurations are reviewed. Arrays of microplasma emitters, having inverted pyramidal Si electrodes or produced in ceramic multilayer sandwiches with integrated ballasting for each pixel, have been demonstrated and arrays as large as 30 ? 30 pixels are described. A new class of photodetectors, hybrid semiconductor/microplasma devices, is shown to exhibit photoresponsivities in the visible and near-infrared that are more than an order of magnitude larger than those typical of semiconductor avalanche photodiodes. Microdischarge devices having refractory or piezoelectric dielectric films such as Al2O3 or BN have extended lifetimes (~86% of initial radiant output after 100?h with an Al2O3 dielectric) and controllable electrical characteristics. A segmented, linear array of microdischarges, fabricated in a ceramic multilayer structure and having an active length of ~1?cm and a clear aperture of 80 ? 360??m2, exhibits evidence of gain on the 460.3 nm transition of Xe+, making it the first example of a microdischarge-driven optical amplifier.

Multi-Source/Component Spray Coating for Polymer Solar Cells

A multi-source/component spray coating process to fabricate the photoactive layers in polymer solar cells is demonstrated. Well-defined domains consisting of polymer:fullerene heterojunctions are constructed in ambient conditions using an alternating spray deposition method. This approach preserves the integrity of the layer morphology while forming an interpenetrating donor (D)/acceptor (A) network to facilitate charge transport. The formation of multi-component films without the prerequisite of a common solvent overcomes the limitations in conventional solution processes for polymer solar cells and enables us to process a wide spectrum of materials. Polymer solar cells based on poly(3-hexylthiophene):[6,6]-phenyl C(61) butyric acid methyl ester spray-coated using this alternating deposition method deliver a power conversion efficiency of 2.8%, which is comparable to their blend solution counterparts. More importantly, this approach offers the versatility to independently select the optimal solvents for the donor and acceptor materials that will deliver well-ordered nanodomains. This method also allows the direct stacking of multiple photoactive polymers with controllable absorption in a tandem structure even without an interconnecting junction layer. The introduction of multiple photoactive materials through multisource/component spray coating offers structural flexibility and tenability of the photoresponse for future polymer solar cell applications.

Role of grain boundary and grain defects on ferromagnetism in Co:ZnO films

The annealing effects on magnetism, structure, and ac transport for Co:ZnO films have been systematically investigated. The room temperature saturation magnetization (Ms) varies drastically with Ar or Ar∕H2 annealing processes. By using the impedance spectra, the change in grain boundary and grain defects of these films can be analyzed. The results demonstrate that Ar annealing produces mainly the grain boundary defects which cause the enhancement of Ms. Ar∕H2-annealing creates not only grain boundary defects but also the grain defects, resulting in the stronger enhancement of Ms. Ferromagnetism for Co:ZnO films is influenced by both grain boundaries and grain defects.

Silicon microdischarge devices having inverted pyramidal cathodes: Fabrication and performance of arrays

Microdischarge devices having inverted, square pyramidal cathodes as small as 50 μm×50 μm at the base and 35 μm in depth, have been fabricated in silicon and operated at gas pressures up to 1200 Torr. For the polyimide dielectric incorporated into these devices (er=2.9), the discharges produced exhibit high differential resistance (∼2×108 Ω in Ne), ignition voltages for a single device of ∼260–290 V, and currents typically in the μA range. Arrays as large as 10×10 have been fabricated. For an 8 μm thick polyimide dielectric layer, operating voltages as low as 200 V for a 5×5 array have been measured for 700 Torr of Ne. Array lifetimes are presently limited to several hours by the thin (1200–2000 A) Ni anode.

Single-crystalline AlZnO nanowires/nanotubes synthesized at low temperature

Single-crystalline AlZnO nanomaterials were synthesized through a proposed alloy-evaporation deposition method at the low temperature of 550°C by thermal chemical vapor deposition. Transmission electron microscopy images show that AlZnO nanowires, or nanowire/nanotube junction structures, can be synthesized where the Al∕(Al+Zn) atomic ratio is determined to be about 2.5 and 12at.%, respectively, by electron energy loss spectrometry. Room-temperature cathodoluminescence measurements show that the AlZnO nanowires exhibit a strong ultraviolet emission, which shifts to a higher energy from 3.29to3.34eV due to Al incorporation.

ZnO symmetric nanosheets integrated with nanowalls

Diverse ZnO integrated nanostructures, constructed by epitaxial nanowalls and symmetric single-crystalline nanosheets, were successfully synthesized via a strain-assisted self-catalyzed process at a low temperature of 500°C. The nanostructures started with the growth of ZnO nanowires, nucleated on a rugged ZnO single-crystalline film via a strain-assisted self-catalyzed growth mechanism. The nanowalls were then formed by the interconnection of the nanowires. Finally, the nanosheets were grown from the edges of the nanowalls. The growth mechanisms were supported by direct experimental evidence. Room-temperature cathodoluminance spectra show a relatively strong and sharp ultraviolet emission as well as a weak and broad green emission. The integrated nanostructure may be applied to develop self-inclusive nanoelectronics.

ZnO hexagonal arrays of nanowires grown on nanorods

ZnO single-crystalline nanowire-type nanostructures were synthesized on silicon by thermal chemical vapor deposition without catalysts through a two-step pressure-controlled vapor-reflected process at a low temperature of 550 °C where self-organized hexagonal crystalline or porous nanowire arrays were grown on nanorods. The nanowire diameter is around 20 nm and number of nanowires is selected by the nanorod size. Cathodoluminescence spectra exhibit strong green emissions, indicative of high oxygen-vacancy density, which sheds a light on further applications for multichannel nanoconductors in nanodevices.

Anisotropic Outputs of a Nanogenerator from Oblique-Aligned ZnO Nanowire Arrays

We studied the dependence of the output of the piezoelectric nanogenerator (NG) on the inclining orientation of the ZnO nanowire arrays (NWAs). The oblique-aligned NWAs were grown by combing a modified oblique-angle sputtering technique for preparing the seed layer and hydrothermal growth. The piezoelectric output of the NWAs was studied by scanning the tip of an atomic force microscope along four different directions in reference to the inclining direction of the NWs. The statistical outputs were analyzed in reference to the theoretically calculated piezopotential distribution in the NWs. Our study provides in-depth understanding about the performance of NGs.