Chun-Han Lai

Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands

We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) using inductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical (PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factor of six times in photoluminescence (PL) intensities of nanorods made with the PEC process was achieved in comparison to that of the as-grown structure. The peak wavelength observed from PL measurement showed a blue shift of 3.8 nm for the nanorods made without the PEC oxidation process and 8.6 nm for the nanorods made with the PEC oxidation process from that of the as-grown LED sample. In addition, we have demonstrated electrically pumped nanorod LEDs with the electroluminescence spectrum showing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LED sample.

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350xa0mA and with a chip size of 1xa0mm × 1xa0mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

High-Performance GaN-Based Vertical-Injection Light-Emitting Diodes With TiO

We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2-SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm times 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2-SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace

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A vertical electrophoretic deposition technique was employed to prepare polystyrene (PS) colloidal crystals with negligible crystallographic defects. The colloidal crystals were plated with Ni, followed by selective removal of PS microspheres to fabricate inverse opals. With adjustments in relevant processing parameters, we were able to obtain inverse opals in multiple layers with excellent surface uniformities. The inverse opals were used as the electrode material for water electrolysis. Results from current-potential polarizations in 1 M KOH aqueous solution indicated that the catalytic abilities for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) increased with the layers of inverse opals. Estimation of the effective current densities determined that the entire area of the inverse opals was available for electrochemical reactions. In galvanostatic measurements for both OER and HER, the inverse opals demonstrated stable voltage profiles without notable degradations for 120 h. Compared with a planar Ni plate, the inverse opals exhibited a significantly reduced overpotential for the water electrolysis.

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Enhancement of light extraction of GaN-based flip-chip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300mA and a chip size of 1 mmtimes1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITO LED with the ODR shows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices

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We fabricate cylindrical colloidal crystals (CCCs) via electrophoretic depositions of polystyrene microspheres on a carbon fiber in a concentric arrangement. Images from optical and scanning electron microscope indicate that the CCCs of 460 nm microspheres reveal a semicrystalline structure in close-packed lattice, while the CCCs of 660 exhibit an amorphous arrangement. In optical reflectance spectra, both CCCs demonstrate a dispersive photonic bandgap as compared to that from planar counterparts. The curved contour for the CCCs renders incident light interacting with reflecting planes at slightly different angles, leading to a notable reduction in the reflectance intensity and minor relocation of photonic bandgap contingent on their crystallinity.

Omnidirectional Reflector and n-GaN Roughness

In this paper, we propose a simple, low cost and mass producible nanoimprint lithography (NIL) method to texture the surface of GaN-based light emitting diodes (LEDs) with a two-dimensional photonic crystal (2DPC). Such a 2DPC structure not only enhanced the light output power but also changed the far-field pattern simultaneously. Also, a TiO2/SiO2 omnidirectional reflector (ODR) was deposited on the backside of the LEDs to further increase the light output power. Under 350 mA current injection, it was found that forward voltages were 3.35, 3.34 and 3.75 V while the light output powers of the LEDs were 59.5, 92.5 and 112.1 mW for the conventional LED, the PCLED with 20 nm depth, and the PCLED with 120 nm depth all with chip size of 1 mm × 1 mm, respectively. A 88.4% enhancement in light output power of PCLED with a 120 nm depth and ODR on the backside could be achieved when compared to the conventional LED under the driving current of 350 mA. From the measurement results, it was also found that the NIL process does not degrade the electrical properties of the fabricated LEDs.

Ni Inverse Opals for Water Electrolysis in an Alkaline Electrolyte

ZnO inverse opals are fabricated by electrophoresis of polystyrene (PS) microspheres (720 nm in diameter) on a ITO glass to form a close-packed colloidal crystal, followed by potentiostatic deposition of ZnO in the interstitial voids among the PS microspheres and chemical removal of the PS colloidal template. By adjusting the electrodeposition time, we obtain semi-layered and multilayered ZnO inverse structures with significantly reduced defects and considerable surface uniformity. The semi-layered ZnO inverse opals display a bowl-like morphology with individual cavities isolated from each other. In contrast, the multi-layered ZnO inverse opals exhibit a three-dimensional skeleton with hexagonally-arranged cavities interconnected to each other. After surface coating of perfluorodecyltriethoxysilane, both samples reveal a superhydrophobic nature with contact angle larger than 150 . In electrowetting measurements, the contact angles are decreasing with increasing applied voltages. The droplet on the semi-layered ZnO inverse opals demonstrates a notable transition from the Cassie-Baxter state to the Wenzel one. However, the droplet on the multi-layered ZnO inverse opals indicates three distinct regimes; Cassie-Baxter state, mixed Cassie-Baxter/Wenzel state, and Wenzel state. Repelling pressure of the entrapped air in the cavities is estimated to explain the observed contact angle variation upon the applied voltage for both samples. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3594723] All rights reserved.

Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light-Emitting Diodes With TiO

Fabrication of large-area colloidal crystals (400 μm 2 ) with superb uniformity in multiple layers (∼ 128 layers) from SiO 2 microspheres (∼400nm) was achieved by electrophoresis in vertical arrangement. With a large difference in electrode areas and selection of ethanol as the solvent, we investigated self-assembly with SiO 2 suspensions at various pH and electric fields of 20-100 V cm -1 . Colloid formations with negligible vacancies and small-angle grain boundaries were obtained at a suspension of pH ≈ 10 and electric field of 20 V cm -1 . Our fabrication scheme enables construction of colloidal crystals with significantly reduced structural disorders as compared to conventional routes.

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We employed an electrophoretic deposition technique to prepare cylindrical colloidal crystals (CCCs) from polystyrene (PS) microspheres of 460 and 660 nm diameters using a carbon fiber (CF) with 7 μm diameter as the substrate. Measurements on the CCC diameter demonstrated growth rates that slowed down as time progressed. Scanning electron microscope images confirmed that the CCCs of 460 nm microspheres formed a face-centered cubic close-packed lattice, whereas an amorphous structure appeared for the CCCs of 660 nm. Subsequently, both CCCs underwent a potentiostatic electroplating to deposit Ni into the interstitial voids among the PS microspheres. After chemical removal of the PS microspheres, we fabricated cylindrical inverse opals (CIOs) in various diameters. As expected, better crystallinity was found on the CIOs of 460 nm microspheres as opposed to the 660 nm ones. The electrical resistivity for both CIOs exhibited a substantial reduction over that of the CF. Our CCCs and CIOs revealed considerable structure stability with excellent surface uniformity. The fabrication scheme enables rapid preparations of CCCs and CIOs in desirable lengths and diameters.