Chun-Seok Jeong

A 5-Gbit/s Clock- and Data-Recovery Circuit With 1/8-Rate Linear Phase Detector in 0.18-

With a new 1/8-rate linear phase detector (PD), a 5-Gbit/s clock and data recovery (CDR) circuit is implemented in a digital 0.18-mum CMOS technology. The outputs of the PD have much wider pulse than those of the conventional linear PDs. Thus, the design of circuits such as the PD and charge becomes much easier, and the maximum data rate is no longer limited by the speed of phase detection. The CDR shows 6.8-ps rms and 57.4-ps peak-to-peak jitter in the recovered clock and 10-12 bit error rate for 231-1 pseudorandom binary-sequence input while consuming 144 mW from a 1.8-V supply.

{\rm \mu}\hbox{m}

Because of the expansion of high performance computing (HPC) and server market, demand for HBM DRAM is increasing. With this market flow, diverse customers require various HBM product families. One customer requirement is full bandwidth with less density. Therefore, this work presents a HBM DRAM, which supports 4, 8, and even 2-hi stacks with full-bandwidth performance. The HBM DRAM adopts a peripheral base die architecture, which has smaller chip size and good testability resulting in more manufacturability. This architecture can compensate for process variation, since this problem among core dies within the same known good stacked die (KGSD) is the key issue of TSV-based stacked DRAM [1]. Layout aligning between PHY and TSVs improves the speed performance of the whole system due to reduced data skew. The peripheral base die contains address/command decoders (COMDEC), a core pipe-out (POUT) signal generator, and internal power, references and bias generators. A small-swing technique on a heavy load interface can reduce dynamic power and also has tolerance to process variations.

CMOS Technology

In this paper, HBM DRAM with TSV technique is introduced. This paper covers the general TSV feature and techniques such as TSV architecture, TSV reliability, TSV open / short test, and TSV repair. And HBM DRAM, representative DRAM product using TSV, is widely presented, especially the use and features.

18.3 A 1.2V 64Gb 8-channel 256GB/s HBM DRAM with peripheral-base-die architecture and small-swing technique on heavy load interface

The interpin skew among the data and the strobe signals of a source-synchronous parallel DRAM interface is compensated by a simple delay-locked loop, which reuses the circuitry of a normal input data path. With the interpin skew compensation, the printed circuit board traces of the data and the strobe signals are allowed to have unequal length. The prototype implemented in a 0.13- μm standard CMOS process shows that the interpin skew is reduced to be less than 26 ps for a 3.2-Gb/s/pin ×8 parallel interface.