Chun-Yu Lin

Significantly Enhancing Luminance of Organic Light-Emitting Diodes (OLEDs) with Doping Iodine and Nitrogen Treatment

Simultaneously doping iodine (I2) inorganic dopants and nitrogen (N2) treatment on hole transport layer (HTL) to promote the output luminance of the Al/ Tris-(8-hydroxyquinoline) aluminum (Alq3)/N, N’-diphenyl-N, N’bis (3-methylphenyl)-1, l’-bipheny-4, 4’-diamine (TPD)/ITO organic light-emitting diodes (OLEDs) has been studied in detail. Experimental results show that the output luminance can be significantly promoted up to 950% and 560% in magnitude at bias of 8V and 10V, respectively. We attribute the obvious promotion to significant morphological changes occurring in HTL as a result of the di-nitrogen occlusion and I2 dopant generated guest hopping sites. The morphological changes improve the HTL/Alq3 interface while the interfering action between guest and host hopping sites lowers hole mobility thus raising the output luminance in the OLEDs.

Improving Boron-Induced Retardation of Metal-Induced Lateral Crystallization Length by Hydrogen Treatment

In this letter, we use hydrogen treatment to improve boron-dopant-induced growth length retardation in metal-induced lateral crystallization (MILC) of amorphous silicon film (a-Si). Compared with the case without hydrogen treatment, a scanning electron microscope (SEM) micrograph shows that the grown poly-silicon length in boron-doped a-Si film can be increased from 7 to 40 mm after 6 h of MILC annealing. The doped boron atoms generate a large number of dangling bonds, which then capture the metal atoms to interrupt the MILC processing thus retarding the growth length. Therefore, the obvious enhancement in MILC length is attributed to the passivation of dangling bonds with hydrogen atoms. [DOI: 10.1143/JJAP.44.L1039]