Chung-Chia Chen

A diarylborane-substituted carbazole as a universal bipolar host material for highly efficient electrophosphorescence devices

Recently bipolar phosphorescent host materials have attracted wide attention since they can achieve better charge balance and hence better device performance. In this work, we report the synthesis and physical properties of a novel bipolar host material containing the dimesityl borane/carbazole hybrid, CMesB. With a high triplet energy, CMesB is considered a promising universal host material and has been applied to phosphorescent OLEDs of various colors. Red/green/blue/white (RGBW) OLEDs based on CMesB all show high external quantum efficiencies (20.7% for red, 20.0% for green, 16.5% for blue, and 15.7% for white) at practical brightnesses. The results indicate that the bipolar host CMesB with high triplet energy has high potential in manufacturing RGBW OLEDs for display or lighting applications.

Strain-enhanced photoluminescence from Ge direct transition

Strong enhancement of Ge direct transition by biaxial-tensile strain was observed. The reduction in band gap difference between the direct and indirect valleys by biaxial tensile strain increases the electron population in the direct valley, and enhances the direct transition. The band gap reduction in the direct and indirect valleys can be extracted from the photoluminescence spectra and is consistent with the calculations using k⋅p and deformation potential methods for conduction bands and valence bands, respectively.

Blue to True-Blue Phosphorescent IrIII Complexes Bearing a Nonconjugated Ancillary Phosphine Chelate: Strategic Synthesis, Photophysics, and Device Integration

We report the design and synthesis of Ir(III) complexes functionalized with substituted pyridyl cyclometalate or azolate chromophores, plus one newly designed nonconjugated phosphine chelate, which not only greatly restricts its participation in the lowest-lying electronic transition but also enhances the coordination strength. These two key factors lead to fine-tuning of the phosphorescence chromaticity toward authentic blue and simultaneously suppress, in part, the nonradiative deactivation. This conceptual design presents a novel strategy in achieving heretofore uncommon, high-efficiency blue and true-blue phosphorescence. The fabrication of the organic light-emitting devices (OLEDs) employing phosphorescent dopants [Ir(dfpbpy)(2)(P(wedge)N)] (1b) and [Ir(fppz)(2)(P(wedge)N)] (3) was successfully made, for which the abbreviations (dfpbpy)H, (fppz)H, and (P(wedge)N)H represent 2-(4,6-difluorophenyl)-4-tert-butylpyridine, 3-(trifluoromethyl)-5-(2-pyridyl)pyrazole, and 5-(diphenylphosphinomethyl)-3-(trifluoromethyl)pyrazole, respectively. Of particular interest is the 3-doped OLEDs, which exhibit remarkable maximum efficiencies of 6.9%, 8.1 cd A(-1), and 4.9 lm W(-1), together with a true-blue chromaticity CIE(x,y) = 0.163, with 0.145 recorded at 100 cd m(-2).

Phosphorescent Ir(III) complexes bearing double benzyldiphenylphosphine cyclometalates; strategic synthesis, fundamental and integration for white OLED fabrication

A new Ir(III) complex [Ir(bdp)2(OAc)] (1) was prepared by the treatment of IrCl3(tht)3 with approx. two equivalent of benzyldiphenylphosphine in refluxing decalin solution, bdpH = benzyldiphenylphosphine and tht = tetrahydrothiophene. Complex 1 proves to be a versatile precursor, which could further react with various triazolate chelates such as 5-pyridyl-3-trifluoromethyl-1,2,4-triazole (fptzH), 3-tert-butyl-5-(2-pyridyl)-1,2,4-triazole (bptzH), 5-(1-isoquinolyl)-3-tert-butyl-1,2,4-triazole (iqbtzH) and 5-(1-phenanthridinyl)-3-tert-butyl-1,2,4-triazole (pbtzH) to afford the emissive complexes [Ir(bdp)2(fptz)] (2), [Ir(bdp)2(bptz)] (3), [Ir(bdp)2(iqbtz)] (4), and [Ir(bdp)2(phbtz)] (5), respectively. Single crystal X-ray diffraction studies of 1 and 5 revealed a distorted octahedral Ir(III) metal core, both possess two mutually orthogonal bdp cyclometalates, and the respective PPh2 donors reside at the cis-orientation. Formation of complexes 2–5 can be envisioned as simple replacement of acetate with the incoming N-heterocyclic triazolate chelates. As for photophysical properties, the structural variation leads to salient difference in emission features among complexes 2–5. Combining theoretical approaches, the results are rationalized by the contribution from the degree of ligand π-conjugation, together with the occurrence of ligand-to-ligand charge transfer (LLCT) and intra-ligand ππ* transition in the lowest lying excited state. The orange-red and white light-emitting OLEDs were then fabricated using 5 as dopant, for which the respective devices gave peak efficiencies of 13.6% photons/electron, 33.3 cd A−1, 29.8 lm/W and with CIEx,y = 0.530, 0.467 at 100 cd m−2, and peak efficiencies of 13.0% photons/electron, 28.0 cd A−1, 22.8 lm/W, and with CIEx,y = 0.356, 0.348 at 1000 cd m−2.

Blue-emitting Ir(III) phosphors with ancillary 4,6-difluorobenzyl diphenylphosphine based cyclometalate

Treatment of difluorobenzyldiphenylphosphine with the Ir(III) dimer [(dfppy)2Ir(mu-Cl)]2 gives (N,N)-trans-[Ir(dfppy)2(dfbdpH)Cl], followed by skeletal isomerization to form its (N,N)-cis analogue, and then the fully cyclometalated complex [Ir(dfppy)2(dfbdp)]; the last complex and its derivative are suitable for fabrication of true-blue phosphorescent OLEDs.

Competitiveness between direct and indirect radiative transitions of Ge

Both direct and indirect transitions of photoluminescence and electroluminescence are observed in a Ge n+p diode. The relative intensity of direct radiative recombination with respect to indirect radiative recombination increases with the increase in the optical pumping power, injection current density, and temperature. The increase in electron population in the direct valley is responsible for the enhancement. The spectra can be fitted by the combination of direct and indirect transition models. The direct radiative transition rate is ∼1600 times of the indirect transition, estimated by electroluminescence and photoluminescence spectra near room temperature.

Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers

The enhanced photoluminescence of direct transition is observed on (100), (110), and (111) Ge under biaxial tensile strain. The enhancement is caused by the increase in electron population in the Γ valley. The shrinkage of energy difference between the lowest L valleys and the Γ valley is responsible to the population increase on (100) and (110) Ge. For (111) Ge, the energy difference increases under biaxial tensile strain but the strain decreases energy difference between the electron quasi-Fermi level and the Γ valley due to the small density of state of the lowest L valleys, and thus enhances direct recombination.

Influence of defects and interface on radiative transition of Ge

The influences of defects and surface roughness on the indirect bandgap radiative transition of Ge were studied. Bulk Ge has 15 times the integrated intensity of photoluminescence of Ge-on-Si. However, for Ge-on-Si sample, the direct transition related photoluminescence intensity is higher than the indirect transition related one. We affirm that the defects in the Ge-on-Si are responsible for the weak indirect transition and relatively strong direct transition. The scattering of electrons by roughness at Ge/oxide interface can provide extra momentum of the indirect band transition of Ge, and thus enhance the indirect radiative transition.

Electroluminescence from monocrystalline silicon solar cell

The band edge emission with the peak at 1.15 μm is observed at room temperature from monocrystalline silicon solar cell at forward bias. The electroluminescence spectra can be fitted by electron hole plasma recombination model. The temporal response of electroluminescence is used to characterize the minority carrier lifetime by fitting the time evolution of radiative recombination using the Shockley–Read–Hall, radiative, and Auger recombination models. The minority carrier lifetime is almost constant (1.8 ms) for excess carrier density lower than 4×1015 cm−3, and then decreases at higher concentration.

Influences of ITO anode thickness on OLED efficiencies

In this work, emission characteristics of OLEDs as a function of the ITO anode thickness were investigated theoretically and experimentally. The efficiency characteristics show significant variations (1.34 times in quantum efficiencies, 1.44 times in cd/A efficiencies and 1.51 times in lm/W efficiencies) vs. ITO thickness.