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Dive into the research topics where Clare E. Rowland is active.

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Featured researches published by Clare E. Rowland.


Nature Materials | 2015

Picosecond energy transfer and multiexciton transfer outpaces Auger recombination in binary CdSe nanoplatelet solids

Clare E. Rowland; Igor Fedin; Hui Zhang; Stephen K. Gray; Alexander O. Govorov; Dmitri V. Talapin; Richard D. Schaller

Fluorescence resonance energy transfer (FRET) enables photosynthetic light harvesting, wavelength downconversion in light-emitting diodes (LEDs), and optical biosensing schemes. The rate and efficiency of this donor to acceptor transfer of excitation between chromophores dictates the utility of FRET and can unlock new device operation motifs including quantum-funnel solar cells, non-contact chromophore pumping from a proximal LED, and markedly reduced gain thresholds. However, the fastest reported FRET time constants involving spherical quantum dots (0.12-1 ns; refs 7-9) do not outpace biexciton Auger recombination (0.01-0.1 ns; ref. 10), which impedes multiexciton-driven applications including electrically pumped lasers and carrier-multiplication-enhanced photovoltaics. Few-monolayer-thick semiconductor nanoplatelets (NPLs) with tens-of-nanometre lateral dimensions exhibit intense optical transitions and hundreds-of-picosecond Auger recombination, but heretofore lack FRET characterizations. We examine binary CdSe NPL solids and show that interplate FRET (∼6-23 ps, presumably for co-facial arrangements) can occur 15-50 times faster than Auger recombination and demonstrate multiexcitonic FRET, making such materials ideal candidates for advanced technologies.


Journal of the American Chemical Society | 2014

In Situ Optical and Structural Studies on Photoluminesence Quenching in CdSe/CdS/Au Heterostructures

Arnaud Demortière; Richard D. Schaller; Tao Li; Soma Chattopadhyay; Galyna Krylova; Tomohiro Shibata; Paula Cecilia dos Santos Claro; Clare E. Rowland; Jeffrey T. Miller; Russell E. Cook; Byeongdu Lee; Elena V. Shevchenko

We report here detailed in situ studies of nucleation and growth of Au on CdSe/CdS nanorods using synchrotron SAXS technique and time-resolved spectroscopy. We examine structural and optical properties of CdSe/CdS/Au heterostructures formed under UV illumination. We compare the results for CdSe/CdS/Au heterostructures with the results of control experiments on CdSe/CdS nanorods exposed to gold precursor under conditions when no such heterostructures are formed (no UV illumination). Our data indicate similar photoluminescence (PL) quenching and PL decay profiles in both types of samples. Via transient absorption and PL, we show that such behavior is consistent with rapid (faster than 3 ps) hole trapping by gold-sulfur sites at the surface of semiconductor nanoparticles. This dominant process was overlooked in previous end-point studies on semiconductor/metal heterostructures.


Langmuir | 2015

Synthesis and Ligand Exchange of Thiol-Capped Silicon Nanocrystals

Yixuan Yu; Clare E. Rowland; Richard D. Schaller; Brian A. Korgel

Hydride-terminated silicon (Si) nanocrystals were capped with dodecanethiol by a thermally promoted thiolation reaction. Under an inert atmosphere, the thiol-capped nanocrystals exhibit photoluminescence (PL) properties similar to those of alkene-capped Si nanocrystals, including size-tunable emission wavelength, relatively high quantum yields (>10%), and long radiative lifetimes (26-280 μs). X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed that the ligands attach to the nanocrystal surface via covalent Si-S bonds. The thiol-capping layer, however, readily undergoes hydrolysis and severe degradation in the presence of moisture. Dodecanethiol could be exchanged with dodecene by hydrosilylation for enhanced stability.


ACS Nano | 2014

Near-infrared photoluminescence enhancement in Ge/CdS and Ge/ZnS core/shell nanocrystals: Utilizing IV/II-VI semiconductor epitaxy

Yijun Guo; Clare E. Rowland; Richard D. Schaller; Javier Vela

Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II-VI, III-V and IV-VI semiconductor quantum dots. Here, we use relatively unexplored IV/II-VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II-VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II-VI nanocrystals are reproducibly 1-3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II-VI nanocrystals. We expect this synthetic IV/II-VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.


Inorganic Chemistry | 2012

Tetraalkylammonium uranyl isothiocyanates

Clare E. Rowland; Mercouri G. Kanatzidis; L. Soderholm

Three tetraalkylammonium uranyl isothiocyanates, [(CH(3))(4)N](3)UO(2)(NCS)(5) (1), [(C(2)H(5))(4)N](3)UO(2)(NCS)(5) (2), and [(C(3)H(7))(4)N](3)UO(2)(NCS)(5) (3), have been synthesized from aqueous solution and their structures determined by single-crystal X-ray diffraction. All of the compounds consist of the uranyl cation equatorially coordinated to five N-bound thiocyanate ligands, UO(2)(NCS)(5)(3-), and charge-balanced by three tetraalkylammonium cations. Raman spectroscopy data have been collected on compounds 1-3, as well as on solutions of uranyl nitrate with increasing levels of sodium thiocyanate. By tracking the Raman signatures of thiocyanate, the presence of both free and bound thiocyanate is confirmed in solution. The shift in the Raman signal of the uranyl symmetric stretching mode suggests the formation of higher-order uranyl thiocyanate complexes in solution, while the solid-state Raman data support homoleptic isothiocyanate coordination about the uranyl cation. Presented here are the syntheses and crystal structures of 1-3, pertinent Raman spectra, and a discussion regarding the relationship of these isothiocyanates to previously described uranyl halide phases, UO(2)X(4)(2-).


ACS Nano | 2014

Thermal Stability of Colloidal InP Nanocrystals: Small Inorganic Ligands Boost High-Temperature Photoluminescence

Clare E. Rowland; Wenyong Liu; Daniel C. Hannah; Maria K. Y. Chan; Dmitri V. Talapin; Richard D. Schaller

We examine the stability of excitons in quantum-confined InP nanocrystals as a function of temperature elevation up to 800 K. Through the use of static and time-resolved spectroscopy, we find that small inorganic capping ligands substantially improve the temperature dependent photoluminescence quantum yield relative to native organic ligands and perform similarly to a wide band gap inorganic shell. For this composition, we identify the primary exciton loss mechanism as electron trapping through a combination of transient absorption and transient photoluminescence measurements. Density functional theory indicates little impact of studied inorganic ligands on InP core states, suggesting that reduced thermal degradation relative to organic ligands yields improved stability; this is further supported by a lack of size dependence in photoluminescence quenching, pointing to the dominance of surface processes, and by relative thermal stabilities of the surface passivating media. Thus, small inorganic ligands, which benefit device applications due to improved carrier access, also improve the electronic integrity of the material during elevated temperature operation and subsequent to high temperature material processing.


Journal of the American Chemical Society | 2015

Evolution of Self-Assembled ZnTe Magic-Sized Nanoclusters

Jun Zhang; Clare E. Rowland; Yuzi Liu; Hui Xiong; Soongu Kwon; Elena V. Shevchenko; Richard D. Schaller; Vitali B. Prakapenka; Sergey N. Tkachev; Tijana Rajh

Three families of ZnTe magic-sized nanoclusters (MSNCs) were obtained exclusively using polytellurides as a tellurium precursor in a one-pot reaction by simply varying the reaction temperature and time only. Different ZnTe MSNCs exhibit different self-assembling or aggregation behavior, owing to their different structure, cluster size, and dipole-dipole interactions. The smallest family of ZnTe MSNCs (F323) does not reveal a crystalline structure and as a result assembles into lamellar triangle plates. Continuous heating of as synthesized ZnTe F323 assemblies resulted in the formation of ZnTe F398 MSNCs with wurzite structure and concomitant transformation into lamellar rectangle assemblies with the organization of nanoclusters along the ⟨002⟩ direction. Further annealing of ZnTe F398 assembled lamellar rectangles leads to full organization of MSNCs in all directions and formation of larger ZnTe F444 NCs that spontaneously form ultrathin nanowires following an oriented attachment mechanism. The key step in control over the size distribution of ZnTe ultrathin nanowires is, in fact, the growth mechanism of ZnTe F398 MSNCs; namely, the step growth mechanism enables formation of more uniform nanowires compared to those obtained by continuous growth mechanism. High yield of ZnTe nanowires is achieved as a result of the wurzite structure of F398 precursor. Transient absorption (TA) measurements show that all three families possess ultrafast dynamics of photogenerated electrons, despite their different crystalline structures.


Nano Letters | 2015

Fast, Ratiometric FRET from Quantum Dot Conjugated Stabilized Single Chain Variable Fragments for Quantitative Botulinum Neurotoxin Sensing

Joonseok Lee; Melissa B. Brennan; Rosemarie Wilton; Clare E. Rowland; Elena A. Rozhkova; Sara Forrester; Daniel C. Hannah; Julia N. Carlson; Elena V. Shevchenko; Daniel Schabacker; Richard D. Schaller

Botulinum neurotoxin (BoNT) presents a significant hazard under numerous realistic scenarios. The standard detection scheme for this fast-acting toxin is a lab-based mouse lethality assay that is sensitive and specific, but slow (∼2 days) and requires expert administration. As such, numerous efforts have aimed to decrease analysis time and reduce complexity. Here, we describe a sensitive ratiometric fluorescence resonance energy transfer scheme that utilizes highly photostable semiconductor quantum dot (QD) energy donors and chromophore conjugation to compact, single chain variable antibody fragments (scFvs) to yield a fast, fieldable sensor for BoNT with a 20-40 pM detection limit, toxin quantification, adjustable dynamic range, sensitivity in the presence of interferents, and sensing times as fast as 5 min. Through a combination of mutations, we achieve stabilized scFv denaturation temperatures of more than 60 °C, which bolsters fieldability. We also describe adaptation of the assay into a microarray format that offers persistent monitoring, reuse, and multiplexing.


Scientific Reports | 2015

Giant optical enhancement of strain gradient in ferroelectric BiFeO3 thin films and its physical origin

Yuelin Li; Carolina Adamo; Pice Chen; Paul G. Evans; Serge M. Nakhmanson; William D. Parker; Clare E. Rowland; Richard D. Schaller; Darrell G. Schlom; Donald A. Walko; Haidan Wen; Qingteng Zhang

Through mapping of the spatiotemporal strain profile in ferroelectric BiFeO3 epitaxial thin films, we report an optically initiated dynamic enhancement of the strain gradient of 105–106 m−1 that lasts up to a few ns depending on the film thickness. Correlating with transient optical absorption measurements, the enhancement of the strain gradient is attributed to a piezoelectric effect driven by a transient screening field mediated by excitons. These findings not only demonstrate a new possible way of controlling the flexoelectric effect, but also reveal the important role of exciton dynamics in photostriction and photovoltaic effects in ferroelectrics.


ACS Nano | 2014

Silicon nanocrystals at elevated temperatures: Retention of photoluminescence and diamond silicon to β-silicon carbide phase transition

Clare E. Rowland; Daniel C. Hannah; Arnaud Demortière; Jihua Yang; Russell E. Cook; Vitali B. Prakapenka; Uwe R. Kortshagen; Richard D. Schaller

We report the photoluminescence (PL) properties of colloidal Si nanocrystals (NCs) up to 800 K and observe PL retention on par with core/shell structures of other compositions. These alkane-terminated Si NCs even emit at temperatures well above previously reported melting points for oxide-embedded particles. Using selected area electron diffraction (SAED), powder X-ray diffraction (XRD), liquid drop theory, and molecular dynamics (MD) simulations, we show that melting does not play a role at the temperatures explored experimentally in PL, and we observe a phase change to β-SiC in the presence of an electron beam. Loss of diffraction peaks (melting) with recovery of diamond-phase silicon upon cooling is observed under inert atmosphere by XRD. We further show that surface passivation by covalently bound ligands endures the experimental temperatures. These findings point to covalently bound organic ligands as a route to the development of NCs for use in high temperature applications, including concentrated solar cells and electrical lighting.

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Donald A. Walko

Argonne National Laboratory

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Haidan Wen

Argonne National Laboratory

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J. W. Freeland

Argonne National Laboratory

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Anand Bhattacharya

Argonne National Laboratory

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