Claude Chapelier

Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition.

Scanning tunneling spectroscopy at very low temperatures on homogeneously disordered superconducting titanium nitride thin films reveals strong spatial inhomogeneities of the superconducting gap Delta in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature Tc towards zero, enhancement of spatial fluctuations in Delta, and growth of the Delta/Tc ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.

Localization of preformed Cooper pairs in disordered superconductors

Disorder leads to localization of electrons at low temperatures, changing metals to insulators. In a superconductor the electrons are paired up, and scanning tunnelling microscopy shows that the pairs localize together rather than breaking up and forming localized single electrons in the insulating state.

Superconducting group-IV semiconductors.

Despite the amount of experimental and theoretical work on doping-induced superconductivity in covalent semiconductors based on group IV elements over the past four years, many open questions and puzzling results remain to be clarified. The nature of the coupling (whether mediated by electronic correlation, phonons or both), the relationship between the doping concentration and the critical temperature (T(c)), which affects the prospects for higher transition temperatures, and the influence of disorder and dopant homogeneity are debated issues that will determine the future of the field. Here, we present recent achievements and predictions, with a focus on boron-doped diamond and silicon. We also suggest that innovative superconducting devices, combining specific properties of diamond or silicon with the maturity of semiconductor-based technologies, will soon be developed.

Pseudogap in a thin film of a conventional superconductor

A superconducting state is characterized by the gap in the electronic density of states, which vanishes at the superconducting transition temperature T(c). It was discovered that in high-temperature superconductors, a noticeable depression in the density of states, the pseudogap, still remains even at temperatures above T(c). Here, we show that a pseudogap exists in a conventional superconductor, ultrathin titanium nitride films, over a wide range of temperatures above T(c). Our study reveals that this pseudogap state is induced by superconducting fluctuations and favoured by two-dimensionality and by the proximity to the transition to the insulating state. A general character of the observed phenomenon provides a powerful tool to discriminate between fluctuations as the origin of the pseudogap state and other contributions in the layered high-temperature superconductor compounds.

Tunneling spectroscopy and vortex imaging in boron-doped diamond.

We present the first scanning tunneling spectroscopy study of single-crystalline boron-doped diamond. The measurements were performed below 100 mK with a low temperature scanning tunneling microscope. The tunneling density of states displays a clear superconducting gap. The temperature evolution of the order parameter follows the weak-coupling BCS law with Delta(0)/kBTc approximately 1.74. Vortex imaging at low magnetic field also reveals localized states inside the vortex core that are unexpected for such a dirty superconductor.

Metal-to-insulator transition and superconductivity in boron-doped diamond

The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron–phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.

Induced superconductivity in graphene grown on rhenium.

We report a new way to strongly couple graphene to a superconductor. The graphene monolayer has been grown directly on top of a superconducting Re(0001) thin film and characterized by scanning tunneling microscopy and spectroscopy. We observed a moiré pattern due to the mismatch between Re and graphene lattice parameters that we have simulated with abxa0initio calculations. The density of states around the Fermi energy appears to be position dependent on this moiré pattern. Tunneling spectroscopy performed at 50xa0mK shows that the superconducting behavior of graphene on Re is well described by the Bardeen-Cooper-Schrieffer theory and stands for a very good interface between the graphene and its metallic substrate.

Universal classification of twisted, strained and sheared graphene moiré superlattices.

Moiré superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene’s electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated. In this scanning tunneling microscopy and density functional theory study, we have analysed graphene samples grown on multilayer graphene prepared onto SiC and on the close-packed surfaces of Re and Ir with ultra-high precision. We resolve small-angle twists and shears in graphene, and identify large unit cells comprising more than 1,000 carbon atoms and exhibiting non-trivial nanopatterns for moiré superlattices, which are commensurate to the graphene lattice. Finally, a general formalism applicable to any hexagonal moiré is presented to classify all reported structures.

High-field termination of a Cooper-pair insulator

We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher-disorder samples undergo a B-induced transition into a strongly insulating state, which terminates at higher Bs forming an insulating peak. We demonstrate that the B terminating this peak coincides with Bc2 of the lower disorder samples. Additionally, we show that, beyond this field, these samples enter a different insulating state in which the magnetic field dependence of the resistance is weak. These results provide crucial evidence for the importance of Cooper-pairing in the insulating peak regime.

Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene

Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe2/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe2 and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe2 and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.