Colin Bruzewicz

Integrated optical addressing of an ion qubit

The long coherence times and strong Coulomb interactions afforded by trapped ion qubits have enabled realizations of the necessary primitives for quantum information processing and the highest-fidelity quantum operations in any qubit to date. Although light delivery to each individual ion in a system is essential for general quantum manipulations and readout, experiments so far have employed optical systems that are cumbersome to scale to even a few tens of qubits. Here we demonstrate lithographically defined nanophotonic waveguide devices for light routing and ion addressing that are fully integrated within a surface-electrode ion trap chip. Ion qubits are addressed at multiple locations via focusing grating couplers emitting through openings in the trap electrodes to ions trapped 50 μm above the chip; using this light, we perform quantum coherent operations on the optical qubit transition in individual 88Sr+ ions. The grating focuses the beam to a diffraction-limited spot near the ion position with 2 μm 1/e2 radius along the trap axis, and we measure crosstalk errors between 10-2 and 4 × 10-4 at distances 7.5-15 μm from the beam centre. Owing to the scalability of the planar fabrication technique employed, together with the tight focusing and stable alignment afforded by the integration of the optics within the trap chip, this approach presents a path to creating the optical systems required for large-scale trapped-ion quantum information processing.

Measurement of ion motional heating rates over a range of trap frequencies and temperatures

We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between

Ion traps fabricated in a CMOS foundry

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Scalable loading of a two-dimensional trapped-ion array

and 1.5 MHz and

Reduction of trapped ion anomalous heating by in situ surface plasma cleaning

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Solid-State Integrated Optics for Large-Scale Trapped-Ion Quantum Information Processing

and 295 K. Additionally, we examine the possible effect of adsorbed surface contaminants with boiling points below

Distance scaling of electric-field noise in a surface-electrode ion trap

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Integrated Electronics for Chip-Scale Trapped-Ion Quantum Control

by measuring the ion heating rate before and after locally baking our ion trap chip under ultrahigh vacuum conditions. We compare the heating rates presented here to those calculated from available electric-field noise models. We can tightly constrain a subset of these models based on their expected frequency and temperature scaling interdependence. Discrepancies between the measured results and predicted values point to the need for refinement of theoretical noise models in order to more fully understand the mechanisms behind motional trapped-ion heating.

Impact of surface cleaning and ion-electrode distance on trapped ion motional heating

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

Two-Qubit Optical Gate in a Mixed-Species Trapped-Ion Quantum Processor

Two-dimensional arrays of trapped-ion qubits are attractive platforms for scalable quantum information processing. Sufficiently rapid reloading capable of sustaining a large array, however, remains a significant challenge. Here with the use of a continuous flux of pre-cooled neutral atoms from a remotely located source, we achieve fast loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive two-dimensional arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux.