Colm Glynn

2D and 3D vanadium oxide inverse opals and hollow sphere arrays

High quality 2D and 3D inverse opals and hollow sphere arrays of vanadium oxide are grown on conductive substrates from colloidal polymer sphere templates formed by electrophoretic deposition or surfactant-assisted dip-coating. Inverse opals (IOs) are formed using variants of solution drop-casting, N2-gun assisted infiltration and high-rate (200 mm min−1) iterative dip-coating methods. Through Raman scattering, transmission electron microscopy and optical diffraction, we show how the oxide phase, crystallinity and structure are inter-related and controlled. Opal template removal steps are demonstrated to determine the morphology, crystallinity and phase of the resulting 2D and 3D IO structures. The ability to form high quality 2D IOs is also demonstrated using UV Ozone removal of PMMA spheres. Rapid hydrolysis of the alkoxide precursor allows the formation of 2D arrays of crystalline hollow spheres of V2O5 by utilizing over-filling during iterative dip-coating. The methods and crystallinity control allow 2D and 3D hierarchically structured templates and inverse opal vanadium oxides directly on conductive surfaces. This can be extended to a wide range of other functional porous materials for energy storage and batteries, electrocatalysis, sensing, solar cell materials and diffractive optical coatings.

Optimizing vanadium pentoxide thin films and multilayers from dip-coated nanofluid precursors.

Using an alkoxide-based precursor, a strategy for producing highly uniform thin films and multilayers of V2O5 is demonstrated using dip coating. Defect-free and smooth films of V2O5 on different surfaces can be deposited from liquid precursors. We show how pinholes are formed due to heterogeneous nucleation during hydrolysis as the precursor forms a nanofluid. Using knowledge of instability formation often found in composite nanofluid films and the influence of cluster formation on the stability of these films, we show how polymer-precursor mixtures provide optimum uniformity and very low surface roughness in amorphous V2O5 and also orthorhombic V2O5 after crystallization by heating. Pinhole and roughness instability formation during the liquid stage of the nanofluid on gold and ITO substrates is suppressed giving a uniform coating. Practically, understanding evolution pathways that involve dewetting processes, nucleation, decomposition, or hydrolysis in complex nanofluids provides a route for improved uniformity of thin films. The method could be extended to improve the consistency in sequential or iterative multilayer deposits of a range of liquid precursors for functional materials and coatings.

Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

By using Si(100) with different dopant type (n++-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit ...

Large Block Copolymer Self-Assembly for Fabrication of Subwavelength Nanostructures for Applications in Optics

Nanostructured surfaces are common in nature and exhibit properties such as antireflectivity (moth eyes), self-cleaning (lotus leaf), iridescent colors (butterfly wings), and water harvesting (desert beetles). We now understand such properties and can mimic some of these natural structures in the laboratory. However, these synthetic structures are limited since they are not easily mass produced over large areas due to the limited scalability of current technologies such as UV-lithography, the high cost of infrastructure, and the difficulty in nonplanar surfaces. Here, we report a solution process based on block copolymer (BCP) self-assembly to fabricate subwavelength structures on large areas of optical and curved surfaces with feature sizes and spacings designed to efficiently scatter visible light. Si nanopillars (SiNPs) with diameters of ∼115 ± 19 nm, periodicity of 180 ± 18 nm, and aspect ratio of 2-15 show a reduction in reflectivity by a factor of 100, <0.16% between 400 and 900 nm at an angle of incidence of 30°. Significantly, the reflectivity remains below 1.75% up to incident angles of 75°. Modeling the efficiency of a SiNP PV suggests a 24.6% increase in efficiency, representing a 3.52% (absolute) or 16.7% (relative) increase in electrical energy output from the PV system compared to AR-coated device.

Linking Precursor Alterations to Nanoscale Structure and Optical Transparency in Polymer Assisted Fast-Rate Dip-Coating of Vanadium Oxide Thin Films

Solution processed metal oxide thin films are important for modern optoelectronic devices ranging from thin film transistors to photovoltaics and for functional optical coatings. Solution processed techniques such as dip-coating, allow thin films to be rapidly deposited over a large range of surfaces including curved, flexible or plastic substrates without extensive processing of comparative vapour or physical deposition methods. To increase the effectiveness and versatility of dip-coated thin films, alterations to commonly used precursors can be made that facilitate controlled thin film deposition. The effects of polymer assisted deposition and changes in solvent-alkoxide dilution on the morphology, structure, optoelectronic properties and crystallinity of vanadium pentoxide thin films was studied using a dip-coating method using a substrate withdrawal speed within the fast-rate draining regime. The formation of sub-100 nm thin films could be achieved rapidly from dilute alkoxide based precursor solutions with high optical transmission in the visible, linked to the phase and film structure. The effects of the polymer addition was shown to change the crystallized vanadium pentoxide thin films from a granular surface structure to a polycrystalline structure composed of a high density of smaller in-plane grains, resulting in a uniform surface morphology with lower thickness and roughness.

Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering

Higher Education Authority (Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013); Irish Research Council (Award No. RS/2011/797); Science Foundation Ireland (under the National Access Programme (NAP 417))

Large directional conductivity change in chemically stable layered thin films of vanadium oxide and a 1D metal complex

Electroactive hybrid and layered oxides and related materials where the inorganic phase is the host, offering the conductivity characteristics of semiconductors, have been used in thin film transistors and related electronic devices where the host–guest interaction offered conductivity with improved processability. We describe the synthesis and characterization of a nanocomposite that shows large conductivity anisotropy when deposited as a thin film. We prepared the material by inserting quasi 1-dimensional potassium tetracyanoplatinate metal complexes with insulating electrical properties in between stacked nanosheets of vanadium oxide xerogels. Detailed structural and compositional analysis using transmission electron microscopy and X-ray photoelectron spectroscopy confirms that the hybrid material forms from a topotactic reaction and the framework of the layered host oxide structure is maintained. The hybrid film demonstrates a ∼1000-fold conductivity change between transport parallel and perpendicular to the film at room temperature. Temperature dependent transport measurements confirm Ohmic conduction perpendicular to the stack and small polaron hopping conduction parallel to the layering direction of the film. The conductivity anisotropy and simple synthesis demonstrate that nanostructured layered hybrids can provide alternative materials for thin film complementary logic and resistive memory.

Containing the catalyst: diameter controlled Ge nanowire growth

Sub-20 nm diameter Ge nanowires with narrow size distributions were grown from Ag nanoparticle seeds in a supercritical fluid (SCF) growth process. The mean Ge nanowire diameter and size distribution was shown to be dependent upon Ag nanoparticle coalescence, using both spin-coating and a block copolymer (BCP) templating method for particle deposition. The introduction of a metal assisted etching (MAE) processing step in order to “sink” the Ag seeds into the growth substrate, prior to nanowire growth, was shown to dramatically decrease the mean nanowire diameter from 27.7 to 14.4 nm and to narrow the diameter distributions from 22.2 to 6.8 nm. Hence, our BCP-MAE approach is a viable route for controlling the diameters of semiconductor nanowires whilst also ensuring a narrow size distribution. The MAE step in the process was found to have no detrimental effect on the length or crystalline quality of the Ge nanowires synthesised.

Raman Scattering Spectroscopy of Metal-Assisted Chemically Etched Rough Si Nanowires

Higher Education Authority (under the framework of the INSPIRE programme, funded by the Irish Governments Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013)

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution-Processed Thin Films.

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO3 nanowire networks on smooth Si/SiO2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V2 O5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures.