Congming Gao

Exploiting parallelism in I/O scheduling for access conflict minimization in flash-based solid state drives

Solid state drives (SSDs) have been widely deployed in personal computers, data centers, and cloud storages. In order to improve performance, SSDs are usually constructed with a number of channels with each channel connecting to a number of NAND flash chips. Despite the rich parallelism offered by multiple channels and multiple chips per channel, recent studies show that the utilization of flash chips (i.e. the number of flash chips being accessed simultaneously) is seriously low. Our study shows that the low chip utilization is caused by the access conflict among I/O requests. In this work, we propose Parallel Issue Queuing (PIQ), a novel I/O scheduler at the host system, to minimize the access conflicts between I/O requests. The proposed PIQ schedules I/O requests without conflicts into the same batch and I/O requests with conflicts into different batches. Hence the multiple I/O requests in one batch can be fulfilled simultaneously by exploiting the rich parallelism of SSD. And because PIQ is implemented at the host side, it can take advantage of rich resource at host system such as main memory and CPU, which makes the overhead negligible. Extensive experimental results show that PIQ delivers significant performance improvement to the applications that have heavy access conflicts.

Exploit Asymmetric Error Rates of Cell States to Improve the Performance of Flash Memory Storage Systems

The reliability of flash memory is getting worse with the introduction of Multiple Level Cell (MLC) and Triple Level Cell (TLC) technologies. To account for possible errors, each page in a flash memory is equipped with an Error Correction Code (ECC) module. An ECC scheme is chosen according to the worst-case error occurrences across all pages in the flash memory. Recent studies show that an MLC flash cell in different states exhibits diverse error rates and the difference is dramatic. Consequently, pages with different data will exhibit quite different error rates. Existing technologies that use one uniform ECC scheme for all pages in a flash memory is far from optimal. This paper exploits the asymmetric error rates exhibited by the pages with different data for write performance improvement. Before a page is programmed, its specific error rate, called Content-Dependent Bit Error Rate (CDBER), is estimated according to the content of the page. The margin between the CDBER of a page and the maximal error rate correctable by the uniform ECC code is exploited for write performance improvement. Simulation results show that the proposed approach leads to significant write performance improvement.

Maximizing IO performance via conflict reduction for flash memory storage systems

Flash memory has been widely deployed during the recent years with the improvement of bit density and technology scaling. However, a significant performance degradation is also introduced with the development trend. The latency of IO requests on flash memory storage systems is composed of access conflict latency, data transfer latency, flash chip access latency and ECC encoding/decoding latency. Studies show that the access conflict latency, which is mainly induced by the slow transfer latency and access latency, has become the dominate part of the IO latency, especially for IO intensive applications. This paper proposes to reduce the flash access conflict latency through the reduction of the transfer and flash access latencies. A latency model is built to construct the relationship among the transfer latency and access latency based on the reliability characteristics of flash memory. Simulation experiments show that the proposed approach achieves significant performance improvement.

Lightweight Data Compression for Mobile Flash Storage

Data compression is beneficial to flash storage lifespan. However, because the design of mobile flash storage is highly cost-sensitive, hardware compression becomes a less attractive option. This study investigates the feasibility of data compression on mobile flash storage. It first characterizes data compressibility based on mobile apps, and the analysis shows that write traffic bound for mobile storage volumes is highly compressible. Based on this finding, a lightweight approach is introduced for firmware-based data compression in mobile flash storage. The controller and flash module work in a pipelined fashion to hide the data compression overhead. Together with this pipelined design, the proposed approach selectively compresses incoming data of high compressibility, while leaving data of low compressibility to a compression-aware garbage collector. Experimental results show that our approach greatly reduced the frequency of block erase by 50.5% compared to uncompressed flash storage. Compared to unconditional data compression, our approach improved the write latency by 10.4% at a marginal cost of 4% more block erase operations.

An Efficient Cache Management Scheme for Capacitor Equipped Solid State Drives

Within SSDs, random access memory (RAM) has been adopted as cache inside controller for achieving better performance. However, due to the volatility characteristic of RAM, data loss may happen when sudden power interrupts. To solve this issue, capacitor has been equipped inside emerging SSDs as interim supplier. However, the aging issue of capacitor will result in capacitance decreases over time. Once the remaining capacitance is not able to write all dirty pages in the cache back to flash memory, data loss may happen. In order to solve the above issue, an efficient cache management scheme for capacitor equipped SSDs is proposed in this work. The basic idea of the scheme is to bound the number of dirty pages in cache within the capability of the capacitor. Simulation results show that the proposed scheme achieves encourage improvement on lifetime and performance while power interruption induced data loss is avoided.

Loss is Gain: Shortening Data for Lifetime Improvement on Low-Cost ECC Enabled Consumer-Level Flash Memory

Reliability has been a challenge in the development of NAND flash memory, due to its technology size scaling and bit density improvement. To ensure the data integrity, error correction codes (ECC) with high error correction capability have been suggested. However, much higher costs will be introduced which cannot be supported for cost-limited consumer-level flash memory. Thus, low-cost ECCs are usually applied. In this work, a reliability improvement scheme is proposed for low-cost ECC enabled consumer-level flash memory. The scheme is motivated by the finding that low-cost ECC is able to protect shortened encoded data with improved reliability. This is because that the less the encoded data are, the less the errors will be occurred. With this motivation, a design is proposed to construct the shortened data case for a low-cost ECC when it cannot be able to provide the reliability requirement. Second, two relaxation approaches are proposed to relax the space reduction as it has bad effects on flash memory. A model guided evaluation is finally presented, and the results show that the lifetime can be significantly improved with little space reduction.

Asymmetric Error Rates of Cell States Exploration for Performance Improvement on Flash Memory Based Storage Systems

Recent studies show that a multilevel cell flash cell in different states suffers from diverse error patterns in varying degrees. That is, the error rates of each page are highly dependent on the data content. Consequently, pages with different data will exhibit quite different error rates. However, existing technologies equipped with one uniform error correction code (ECC) scheme for all pages in a flash memory do not take the different error rates of pages into consideration. In this paper, we propose to exploit the asymmetric error rates of flash memory exhibited by the flash pages with different data for performance improvement. Before a page is programmed, its specific error rates, called content-dependent bit error rates (CDBERs), are estimated according to the content of the page. The margin between the CDBER of a page and the maximal error rates correctable by the uniform ECC code is exploited for performance improvement. On one hand, a faster and suitable write operation is selected to speed up the progress of programming while the increased speed induced CDBER does not exceed the maximal correctable error rates. On the other hand, a light-weight ECC scheme can be chosen for a faster read operation since the page decoding process of a light-weight ECC scheme incurs less time overhead. Finally, a state mapping scheme, which further reduces the CDBER through mapping high error rate states to the low error rate states of a page, is proposed. Simulation results show that the proposed approaches lead to significant write and read performance improvement.

Exploiting Chip Idleness for Minimizing Garbage Collection—Induced Chip Access Conflict on SSDs

Solid state drives (SSDs) are normally constructed with a number of parallel-accessible flash chips, where host I/O requests are processed in parallel. In addition, there are many internal activities in SSDs, such as garbage collection and wear leveling induced read, write, and erase operations, to solve the issues of inability of in-place updates and limited lifetime. When internal activities are triggered on a chip, the chip will be blocked. Our preliminary studies on several workloads show that when internal activities are frequently triggered, the host I/O performance will be significantly impacted because of the access conflict between them. In this work, in order to improve the access conflict induced performance degradation, a novel access conflict minimization scheme is proposed. The basic idea of the scheme is motivated by an interesting observation in SSDs: several chips are idle when other chips are busy with internal activities and host I/O requests. Based on this observation, we propose to schedule internal activities induced operations for minimized access conflict by exploiting the idleness of the multiple chips of SSDs. This approach is realized by two steps: First, read internal activities accessed data to the controller; second, by exploiting the idle chips during internal activities, write internal activities accessed data back to these idle chips. With this scheme, the internal activities can be processed with minimized access conflict to the host requests. Simulation results show that the proposed approach significantly reduces the access conflict, and in turn leads to a significant performance improvement of SSDs.

Minimizing cell-to-cell interference by exploiting differential bit impact characteristics of scaled MLC NAND flash memories

Appealed by the market, flash memory density is being increasingly improved, and the technology scale is being reduced. Currently, scaled multi-level-cell (MLC) flash memory has been the dominant in the global flash memory markets. However, the reliability of MLC flash memory becomes the urgent challenge, where cell-to-cell interference has been well recognized as the major error source. In this work, we propose to minimize cell-to-cell interference through exploiting the differential impacts on the multiple-bit of MLC flash memories. MLC flash memory generally has two or more bits per cell, such as 2-bit/cell or 4- bit/cell, which can be differentially interfered by neighboring cell programming. Based on the understanding of the programming characteristics of MLC flash memory, we found that higher-order bits can be higher interfered and be more significant interference sources. In order to understand the characteristics of cell-tocell interference on the multiple bits, we first present cell-to-cell interference models for multiple bits, respectively. Then based on the model, a state mapping scheme is designed to minimize cell-to-cell interference through mapping the states of high-order bits. The mapping scheme is motivated by the recent studies on the cell-to-cell interference characteristics of the multiple cell states of flash memory, where different states have varying interferences. In this case, high-order bits should be mapped from high interference states to a low one. A series of experiments show that the proposed scheme is efficient on reducing cell-to-cell interference with negligible overhead.