Craig L. Perkins

Structural, Optical, and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol

We describe the structural, optical, and electrical properties of high-quality films of PbSe nanocrystals fabricated by a layer-by-layer (LbL) dip-coating method that utilizes 1,2-ethanedithiol (EDT) as an insolubilizing agent. Comparative characterization of nanocrystal films made by spin-coating and by the LbL process shows that EDT quantitatively displaces oleic acid on the PbSe surface, causing a large volume loss that electronically couples the nanocrystals while severely degrading their positional and crystallographic order of the films. Field-effect transistors based on EDT-treated films are moderately conductive and ambipolar in the dark, becoming p-type and 30-60 times more conductive under 300 mW cm(-2) broadband illumination. The nanocrystal films oxidize rapidly in air to yield, after short air exposures, highly conductive p-type solids. The LbL process described here is a general strategy for producing uniform, conductive nanocrystal films for applications in optoelectronics and solar energy conversion.

Microstructure and Pseudocapacitive Properties of Electrodes Constructed of Oriented NiO-TiO2 Nanotube Arrays

We report on the synthesis and electrochemical properties of oriented NiO-TiO(2) nanotube (NT) arrays as electrodes for supercapacitors. The morphology of the films prepared by electrochemically anodizing Ni-Ti alloy foils was characterized by scanning and transmission electron microscopies, X-ray diffraction, and photoelectron spectroscopies. The morphology, crystal structure, and composition of the NT films were found to depend on the preparation conditions (anodization voltage and postgrowth annealing temperature). Annealing the as-grown NT arrays to a temperature of 600 °C transformed them from an amorphous phase to a mixture of crystalline rock salt NiO and rutile TiO(2). Changes in the morphology and crystal structure strongly influenced the electrochemical properties of the NT electrodes. Electrodes composed of NT films annealed at 600 °C displayed pseudocapacitor (redox-capacitor) behavior, including rapid charge/discharge kinetics and stable long-term cycling performance. At similar film thicknesses and surface areas, the NT-based electrodes showed a higher rate capability than the randomly packed nanoparticle-based electrodes. Even at the highest scan rate (500 mV/s), the capacitance of the NT electrodes was not much smaller (within 12%) than the capacitance measured at the slowest scan rate (5 mV/s). The faster charge/discharge kinetics of NT electrodes at high scan rates is attributed to the more ordered NT film architecture, which is expected to facilitate electron and ion transport during the charge-discharge reactions.

Structural, Optical, and Electrical Properties of PbSe Nanocrystal Solids Treated Thermally or with Simple Amines

We describe the structural, optical, and electrical properties of films of spin-cast, oleate-capped PbSe nanocrystals that are treated thermally or chemically in solutions of hydrazine, methylamine, or pyridine to produce electronically coupled nanocrystal solids. Postdeposition heat treatments trigger nanocrystal sintering at approximately 200 degrees C, before a substantial fraction of the oleate capping group evaporates or pyrolyzes. The sintered nanocrystal films have a large hole density and are highly conductive. Most of the amine treatments preserve the size of the nanocrystals and remove much of the oleate, decreasing the separation between nanocrystals and yielding conductive films. X-ray scattering, X-ray photoelectron and optical spectroscopy, electron microscopy, and field-effect transistor electrical measurements are used to compare the impact of these chemical treatments. We find that the concentration of amines adsorbed to the NC films is very low in all cases. Treatments in hydrazine in acetonitrile remove only 2-7% of the oleate yet result in high-mobility n-type transistors. In contrast, ethanol-based hydrazine treatments remove 85-90% of the original oleate load. Treatments in pure ethanol strip 20% of the oleate and create conductive p-type transistors. Methylamine- and pyridine-treated films are also p-type. These chemically treated films oxidize rapidly in air to yield, after short air exposures, highly conductive p-type nanocrystal solids. Our results aid in the rational development of solar cells based on colloidal nanocrystal films.

Identification of nitrogen chemical states in N-doped ZnO via x-ray photoelectron spectroscopy

Nitrogen-doped films of ZnO grown by two methods, metalorganic chemical vapor deposition (MOCVD) and reactive sputtering, were studied with x-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). Systematic differences in the N chemical states were observed between films grown by sputtering and MOCVD: only two N chemical states were observed in films grown by reactive sputtering, whereas four N chemical states were observed in MOCVD films. To aid in the assignment of the N chemical states, photoemission data from the polycrystalline films were compared with data taken on N2+-implanted Zn metal and N2+-implanted ZnO. High-resolution core level spectra of the N1s region indicated that nitrogen can occupy at least four different chemical environments in ZnO; these include the NO acceptor, the double donor (N2)O, and two carbon–nitrogen species. Valence band spectra indicate that the Fermi energy of all films studied was near the conduction band minimum, implying that the films remained n-type after n...

n-Type Transition Metal Oxide as a Hole Extraction Layer in PbS Quantum Dot Solar Cells

The n-type transition metal oxides (TMO) consisting of molybdenum oxide (MoO(x)) and vanadium oxide (V(2)O(x)) are used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS quantum dot solar cells (QDSC). A 4.4% NREL-certified device based on the MoO(x) HEL is reported with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS quantum dot (QD) layer directly. We find the acting mechanism of the hole extraction layer to be a dipole formed at the MoO(x) and PbS interface enhancing band bending to allow efficient hole extraction from the valence band of the PbS layer by MoO(x). The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoO(x) layer.

PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V–1 s–1

PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.

Chemical vapor deposition-formed p-type ZnO thin films

We have fabricated nitrogen-doped zinc oxide (ZnO) films that demonstrate p-type behavior by using metalorganic chemical vapor deposition. In our experiment, diethylzinc is used as a Zn precursor, and NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. With these precursors, we have routinely reached an N concentration in the ZnO films of about 1–3 at. %. When the N concentration level is higher than 2 at. %, the films demonstrate p-type characteristics. The carrier concentration of the films varies from 1.0×1015 to 1.0×1018 cm−3, and mobilities are mainly in the 10−1 cm2 V−1 s−1 range. The lowest film resistivity achieved is ∼20 Ω cm.

Robust, functional nanocrystal solids by infilling with atomic layer deposition

Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. (1) The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphous alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm2 V(-1) s(-1). Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.

Iron Pyrite Thin Films Synthesized from an Fe(acac)3 Ink

Iron pyrite (cubic FeS2) is a promising candidate absorber material for earth-abundant thin-film solar cells. Here, we report on phase-pure, large-grain, and uniform polycrystalline pyrite films that are fabricated by solution-phase deposition of an iron(III) acetylacetonate molecular ink followed by sequential annealing in air, H2S, and sulfur gas at temperatures up to 550 °C. Phase and elemental compositions of the films are characterized by conventional and synchrotron X-ray diffraction, Raman spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy (XPS). These solution-deposited films have more oxygen and alkalis, less carbon and hydrogen, and smaller optical band gaps (E(g) = 0.87 ± 0.05 eV) than similar films made by chemical vapor deposition. XPS is used to assess the chemical composition of the film surface before and after exposure to air and immersion in water to remove surface contaminants. Optical measurements of films rich in marcasite (orthorhombic FeS2) show that marcasite has a band gap at least as large as pyrite and that the two polymorphs share similar absorptivity spectra, in excellent agreement with density functional theory models. Regardless of the marcasite and elemental impurity contents, all films show p-type, weakly activated transport with curved Arrhenius plots, a room-temperature resistivity of ~1 Ω cm, and a hole mobility that is too small to measure by Hall effect. This universal electrical behavior strongly suggests that a common defect or a hole-rich surface layer governs the electrical properties of most FeS2 thin films.

Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation

p-type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500°C in air for 2h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p-type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements.