Cristian V. Ciobanu

Growth of Semiconducting Graphene on Palladium

We report in situ scanning tunneling microscopy studies of graphene growth on Pd(111) during ethylene deposition at temperatures between 723 and 1023 K. We observe the formation of monolayer graphene islands, 200-2000 A in size, bounded by Pd surface steps. Surprisingly, the topographic image contrast from graphene islands reverses with tunneling bias, suggesting a semiconducting behavior. Scanning tunneling spectroscopy measurements confirm that the graphene islands are semiconducting, with a band gap of 0.3 +/- 0.1 eV. On the basis of density functional theory calculations, we suggest that the opening of a band gap is due to the strong interaction between graphene and the Pd substrate. Our findings point to the possibility of preparing semiconducting graphene layers for future carbon-based nanoelectronic devices via direct deposition onto strongly interacting substrates.

Orientation-dependent work function of graphene on Pd(111)

Selected-area diffraction establishes that at least six different in-plane orientations of monolayer graphene on Pd(111) can form during graphene growth. From the intensities of low-energy electron microscopy images as a function of incident electron energy, we find that the work functions of the different rotational domains vary by up to 0.15 eV. Density functional theory calculations show that these significant variations result from orientation-dependent charge transfer from Pd to graphene. These findings suggest that graphene electronics will require precise control over the relative orientation of the graphene and metal contacts.

The incomplete beta function law for parallel tempering sampling of classical canonical systems

We show that the acceptance probability for swaps in the parallel tempering Monte Carlo method for classical canonical systems is given by a universal function that depends on the average statistical fluctuations of the potential and on the ratio of the temperatures. The law, called the incomplete beta function law, is valid in the limit that the two temperatures involved in swaps are close to one another. An empirical version of the law, which involves the heat capacity of the system, is developed and tested on a Lennard-Jones cluster. We argue that the best initial guess for the distribution of intermediate temperatures for parallel tempering is a geometric progression and we also propose a technique for the computation of optimal temperature schedules. Finally, we demonstrate that the swap efficiency of the parallel tempering method for condensed-phase systems decreases naturally to zero at least as fast as the inverse square root of the dimensionality of the physical system.

Short H-bonds and spontaneous self-dissociation in (H2O)20: Effects of H-bond topology

There are 30026 symmetry-distinct ways to arrange 20 water molecules in a dodecahedral cage with nearly optimum hydrogen bond lengths and angles, analogous to the arrangements that give rise to the zero-point entropy in ice-Ih. The energy of hydrogen bond isomers in (H2O)20, assumed to be similar in the past, differs by up to 70 kcal/mol. The isomers differ widely in their hydrogen bond lengths, some exhibiting bond lengths as short as ∼2.4 A. The differences among the isomers extends to their chemical properties: In some arrangements one or more water molecules spontaneously self-dissociate, giving rise to spatially separated excess proton and hydroxyl ion units in the cluster. Isomers that exhibit these unusual properties can be identified by features of their hydrogen bond topology.

Tunable MoS2 bandgap in MoS2-graphene heterostructures

Using density functional theory calculations with van der Waals corrections, we investigated how the interlayer orientation affects the structure and electronic properties of MoS2-graphene bilayer heterostructures. Changing the orientation of graphene with respect to MoS2 strongly influences the type and the value of the electronic bandgap in MoS2, while not significantly altering the binding energy between the layers or the interlayer spacing. We show that the physical origin of this tunable bandgap arises from variations in the S–S interplanar distance (MoS2 thickness) with the interlayer orientation, variations which are caused by electron transfer away from the Mo–S bonds.

Moiré superstructures of graphene on faceted nickel islands.

Using scanning tunneling microscopy and spectroscopy, in combination with density functional theory calculations, we investigated the morphology and electronic structure of monolayer graphene grown on the (111) and (110) facets of three-dimensional nickel islands on highly oriented pyrolytic graphite substrate. We observed graphene domains exhibiting hexagonal and striped moiré patterns with periodicities of 22 and 12 Å, respectively, on (111) and (110) facets of the Ni islands. Graphene domains are also observed to grow, as single crystals, across adjacent facets and over facet boundaries. Scanning tunneling spectroscopy data indicate that the graphene layers are metallic on both Ni(111) and Ni(110), in agreement with the calculations. We attribute this behavior to a strong hybridization between the d-bands on Ni and the π-bands of carbon. Our findings point to the possibility of preparing large-area epitaxial graphene layers even on polycrystalline Ni substrates.

Morphology of Epitaxial Core-Shell Nanowires

We analyze the morphological stability against azimuthal, axial, and general helical perturbations for epitaxial core-shell nanowires in the growth regimes limited by either surface diffusion or evaporation-condensation surface kinetics. For both regimes, we find that geometric parameters (i.e., core radius and shell thickness) play a central role in determining whether the nanowire remains cylindrical or its shell breaks up into epitaxial islands similar to those observed during Stranski-Krastanow growth in thin epilayers. The combination of small cores and rapid growth of the shell emerges as the key factor leading to stable shell growth. Our results provide an explanation for the different core-shell morphologies reported in the Si-Ge system experimentally and also identify a growth-induced intrinsic mechanism for the formation of helical nanowires.

Strain induced stabilization of stepped Si and Ge surfaces near (001)

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of “hut”-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain.

Structure and vibrational spectra of H+(H2O)8: Is the excess proton in a symmetrical hydrogen bond?

The energetics, structure, and vibrational spectra of a wide variety of H+(H2O)8 structures are calculated using density functional theory and second-order Moller–Plesset ab initio methods. In these isomers of H+(H2O)8 the local environment of the excess proton sometimes resembles a symmetric H5O2+ structure and sometimes H3O+, but many structures are intermediate between these two limits. We introduce a quantitative measure of the degree to which the excess proton resembles H5O2+ or H3O+. Other bond lengths and, perhaps most useful, the position of certain vibrational bands track this measure of the symmetry in the local structure surrounding the excess proton. The general trend is for the most compact structures to have the lowest energy. However, adding zero-point energy counteracts this trend, making prediction of the most stable isomer impossible at this time. At elevated temperatures corresponding to recent experiments and atmospheric conditions (150–200 K), calculated Gibbs free energies clearly fa...

In Situ Gas-Phase Hydrosilylation of Plasma-Synthesized Silicon Nanocrystals

Surface passivation of semiconductor nanocrystals (NCs) is critical in enabling their utilization in novel optoelectronic devices, solar cells, and biological and chemical sensors. Compared to the extensively used liquid-phase NC synthesis and passivation techniques, gas-phase routes provide the unique opportunity for in situ passivation of semiconductor NCs. Herein, we present a method for in situ gas-phase organic functionalization of plasma-synthesized, H-terminated silicon (Si) NCs. Using real-time in situ attenuated total reflection Fourier transform IR spectroscopy, we have studied the surface reactions during hydrosilylation of Si NCs at 160 °C. First, we show that, during gas-phase hydrosilylation of Si NCs using styrene (1-alkene) and acetylene (alkyne), the reaction pathways of the alkenes and alkynes chemisorbing onto surface SiH(x) (x = 1-3) species are different. Second, utilizing this difference in reactivity, we demonstrate a novel pathway to enhance the surface ligand passivation of Si NCs via in situ gas-phase hydrosilylation using the combination of a short-chain alkyne (acetylene) and a long-chain 1-alkene (styrene). The quality of surface passivation is further validated through IR and photoluminescence measurements of Si NCs exposed to air.