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Dive into the research topics where D. C. Ralph is active.

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Featured researches published by D. C. Ralph.


Physical Review Letters | 2000

Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars

J. A. Katine; F. J. Albert; R. A. Buhrman; E. B. Myers; D. C. Ralph

Using thin film pillars approximately 100 nm in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, we examine the process by which the scattering from the ferromagnetic layers of spin-polarized currents flowing perpendicular to the layers causes controlled reversal of the moment direction in the thin Co layer. The well-defined geometry permits a quantitative analysis of this spin-transfer effect, allowing tests of competing theories for the mechanism and also new insight concerning magnetic damping. When large magnetic fields are applied, the spin-polarized current no longer fully reverses the magnetic moment, but instead stimulates spin-wave excitations.


Nature | 2002

Coulomb blockade and the Kondo effect in single-atom transistors

Jiwoong Park; Abhay Pasupathy; Jonas I. Goldsmith; Connie Te-ching Chang; Yuval Yaish; J. R. Petta; Marie Rinkoski; James P. Sethna; Héctor D. Abruña; Paul L. McEuen; D. C. Ralph

Using molecules as electronic components is a powerful new direction in the science and technology of nanometre-scale systems. Experiments to date have examined a multitude of molecules conducting in parallel, or, in some cases, transport through single molecules. The latter includes molecules probed in a two-terminal geometry using mechanically controlled break junctions or scanning probes as well as three-terminal single-molecule transistors made from carbon nanotubes, C60 molecules, and conjugated molecules diluted in a less-conducting molecular layer. The ultimate limit would be a device where electrons hop on to, and off from, a single atom between two contacts. Here we describe transistors incorporating a transition-metal complex designed so that electron transport occurs through well-defined charge states of a single atom. We examine two related molecules containing a Co ion bonded to polypyridyl ligands, attached to insulating tethers of different lengths. Changing the length of the insulating tether alters the coupling of the ion to the electrodes, enabling the fabrication of devices that exhibit either single-electron phenomena, such as Coulomb blockade, or the Kondo effect.


Nature | 2003

Microwave oscillations of a nanomagnet driven by a spin-polarized current

S. I. Kiselev; Jack C. Sankey; I. N. Krivorotov; N. C. Emley; R. J. Schoelkopf; R. A. Buhrman; D. C. Ralph

The recent discovery that a spin-polarized electrical current can apply a large torque to a ferromagnet, through direct transfer of spin angular momentum, offers the possibility of manipulating magnetic-device elements without applying cumbersome magnetic fields. However, a central question remains unresolved: what type of magnetic motions can be generated by this torque? Theory predicts that spin transfer may be able to drive a nanomagnet into types of oscillatory magnetic modes not attainable with magnetic fields alone, but existing measurement techniques have provided only indirect evidence for dynamical states. The nature of the possible motions has not been determined. Here we demonstrate a technique that allows direct electrical measurements of microwave-frequency dynamics in individual nanomagnets, propelled by a d.c. spin-polarized current. We show that spin transfer can produce several different types of magnetic excitation. Although there is no mechanical motion, a simple magnetic-multilayer structure acts like a nanoscale motor; it converts energy from a d.c. electrical current into high-frequency magnetic rotations that might be applied in new devices including microwave sources and resonators.


Science | 2012

Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

Luqiao Liu; Chi-Feng Pai; Yingxia Li; Hsin-wei Tseng; D. C. Ralph; R. A. Buhrman

Giant Spin Hall One of the primary challenges in the field of spin-electronics, which exploits the electrons spin rather than its charge, is to create strong currents of electrons with polarized spins. One way to do this is to use a ferromagnet as a polarizer, a principle used in magnetic tunnel junctions; however, these devices suffer from reliability problems. An alternative is the spin Hall effect, where running a charge current through a material generates a spin current in the transverse direction, but the efficiency of this process tends to be small. Liu et al. (p. 555) now show that the spin Hall effect in Tantalum in its high-resistance β phase generates spin currents strong enough to induce switching of the magnetization of an adjacent ferromagnet; at the same time, Ta does not cause energy dissipation in the ferromagnet. These properties allowed efficient and reliable operation of a prototype three-terminal device. Tantalum is found to generate strong spin currents that can induce switching of ferromagnets efficiently and reliably. Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.


Journal of Magnetism and Magnetic Materials | 2008

Spin transfer torques

D. C. Ralph; Mark D. Stiles

This tutorial article introduces the physics of spin transfer torques in magnetic devices. Our intention is that it be accessible to beginning graduate students. We provide an elementary discussion of the mechanism of spin transfer torque and review the theoretical and experimental progress in this field. This article is meant to set the stage for the articles which follow in this volume of the Journal of Magnetism and Magnetic Materials, which focus in more depth on particularly interesting aspects of spin-torque physics and highlight unanswered questions that might be productive topics for future research.


Nature Physics | 2013

Observation and spectroscopy of a two-electron Wigner molecule in an ultraclean carbon nanotube

S. Pecker; Ferdinand Kuemmeth; A. Secchi; M. Rontani; D. C. Ralph; Paul L. McEuen; S. Ilani

A Wigner molecule—a localized pair of interacting electrons—is now created in a carbon nanotube. The high-quality, electronically pristine tubes enable a full characterization of the energy spectrum, laying the groundwork for future studies of interacting fermion systems in one and two dimensions.


Physical Review Letters | 2012

Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect.

Luqiao Liu; O. J. Lee; Theodore J. Gudmundsen; D. C. Ralph; R. A. Buhrman

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and modeling, that in a Pt/Co bilayer with perpendicular magnetic anisotropy the SHE can produce a spin transfer torque that is strong enough to efficiently rotate and reversibly switch the Co magnetization, thereby providing a new strategy both to understand the SHE and to manipulate magnets. We suggest that the SHE torque can have a similarly strong influence on current-driven magnetic domain wall motion in Pt/ferromagnet multilayers. We estimate that in optimized devices the SHE torque can switch magnetic moments using currents comparable to those in magnetic tunnel junctions operated by conventional spin-torque switching, meaning that the SHE can enable magnetic memory and logic devices with similar performance but simpler architecture than the current state of the art.


Applied Physics Letters | 2012

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

Chi-Feng Pai; Luqiao Liu; Yingxia Li; Hsin-wei Tseng; D. C. Ralph; R. A. Buhrman

We report a giant spin Hall effect in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip, we determine the spin Hall angle to be |θSHβ-W|=0.30±0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices, we independently determine |θSHβ-W|=0.33±0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.


Physical Review Letters | 2011

Spin-torque ferromagnetic resonance induced by the spin Hall effect.

Luqiao Liu; Takahiro Moriyama; D. C. Ralph; R. A. Buhrman

We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance dynamics. The Oersted field from the current also generates a ferromagnetic resonance signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.


Applied Physics Letters | 2000

Spin-polarized current switching of a Co thin film nanomagnet

F. J. Albert; J. A. Katine; R. A. Buhrman; D. C. Ralph

A thin film Co nanomagnet in the shape of an elongated hexagon has been incorporated in a vertical device structure consisting of the nanomagnet and a thin Cu spacer layer formed on top of a thick Co film. The spin-polarized current flowing between the nanomagnet and the Co film is used to abruptly switch the magnetic alignment of the nanomagnet relative to that of the thick Co layer by the transfer of spin angular momentum from the conduction electrons to the nanomagnet moment. The shape anisotropy in the nanomagnet promotes the single domain behavior required for nonvolatile memory applications.

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