D. Das

Thermodynamic stability of RuTe2 solid by vapor pressure study

Abstract The vaporization behavior of the intermetallic compound RuTe 2 (s) was studied in the temperature range of 831–1148 K by the Knudsen effusion technique. As a prerequisite to the study, the nature of the vaporization equilibrium was first obtained. Phase analysis of the partially evaporated sample of RuTe 2 (s) from thermogravimetric experiment carried out in inert environment showed the TG residue to be a biphasic mixture of Ru(s) and RuTe 2 (s). This result together with the available thermodynamic information of Te vapor revealed that the compound incongruently volatilize as RuTe 2 (s)=Ru(s)+Te 2 (g). The equilibrium vapor pressure of Te 2 (g) derived from the measurement at the different temperatures could be expressed as ln( p /Pa)(±0.33)=−33231.2/ T +33.67 (831≤ T /K≤1148). The result of this study is discussed in the light of the reported data on the intermetallic compound.

DC analysis of a MOS based NDR circuit

The DC analysis of a Metal Oxide Semiconductor Field Effect Transistor based negative differential resistor (NDR) is investigated. V-I characteristic of NDR is obtained by adjusting the parameters of NMOS transistors. Here the NDR circuit exhibits lambda type V-I characteristic. The circuit is easy to fabricate as all the components used here are NMOS. To study the characteristic curve of the NDR circuit CADENCE software is used. The circuit is designed based on the standard 0.18um technology. Analytical DC analysis is verified by MATLAB.

Volumetric and compressibility studies on extractant-diluent system: effect of chain length

AbstractThe experimental densities ρ and sound velocities u for binary mixtures of TBP–dodecane have been measured at temperatures from 298.15 to 323.15 K and atmospheric pressure over the whole mole fraction range. From these data, the excess molar volume (VE) and deviation in isentropic compressibility (Δks) have been calculated and fitted to Redlich–Kister polynomial equation. VE and Δks values are positive for TBP–dodecane over the whole mole fraction range and at the above-mentioned temperatures. Excess thermal expansion coefficients (αE) of a mixture of equimolar composition and deviations in molar volume of the components at infinite dilution have been calculated at all temperatures. The variations of these properties with composition and temperature of the binary mixture are discussed in terms of molecular interactions.

Dual Band 30°–30°–120° triangular dielectric resonator antenna

In this work, an isosceles 30°–30°–120° triangular shaped Dielectric Resonator Antenna (DRA) is investigated for dual band application. Commercially available numerical 3D EM simulator HFSS is used to investigate the triangular DRA (TDRA). It is found that the antenna shows resonance at 1.68GHz and 2.48GHz. Variations of input impedance (Zi„) and 5ii with frequency are also presented. These two modes show a peak in the broadside direction. Therefore, our antenna can be used as dual-band antenna.

Isosceles 45°–45°–90° triangular microstrip antenna as triple band antenna

An isosceles right Triangular Microstrip Antenna (TMA) is investigated here for triple band application. Simple cavity model theory is used to investigate the isosceles 45°–45°–90° TMA. Two different isosceles 45°–45°–90° TMAs are demonstrated for triple band dual polarized antenna. Finite Element Method (FEM) based commercially available numerical 3D EM simulator HFSS is also used here to verify the theoretical results. Variations of input impedance (Z<inf>in</inf>) and S<inf>11</inf> with frequency are presented.

Parametric distribution and feature level analysis of different types of gated resistors

Gated resistor is an accumulation mode device without any junction (p-n junction or Schottky junction) in which the channel doping concentration is generally equal to doping concentration on the source and drain. Gated resistors have been fabricated to avoid the super steep and troublesome doping profile of conventional Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It simplifies the current-flow due to the elimination of Semiconductor/Insulator interface to a great extent. The advantage of gated resistor includes the avoidance of the junction by which the process flow and architecture are highly simplified. Its self alignment behavior avoids the thermal budget needed for dopant activation after gate stack formation. Ultrathin device layer of very highly doped semiconductor is present in this device. Here we have analyzed different types of gated resistors, their architectures, characteristics, pros and cons. Different types of gated resistors included here are Multiple Independent Gate Field Effect Transistor (MIGFET) having more than one gate independent of each other, Junction-Less Tunnel Field Effect Transistor (JL-TFET) where tunneling effect occurs, Bulk Planar (BP) Gated Resistor forming over the bulk silicon, Silicon On Insulator (SOI) Gated Resistor in the presence of spacer and Vertical Slit Field Effect Transistor (VeSFET) where vertical silicon channel and metal pillar are present.

30°-60°-90° Triangular Dielectric Resonator Antenna: A new shaped Dielectric Resonator Antenna

30°-60°-90° triangular shaped Dielectric Resonator Antenna (DRA) is investigated here. The DRA is formed by cutting the equilateral Triangular DRA (TDRA) along its median. Fundamental mode is excited for both antennas. A comparative study between input impedance, S₁₁ and far-field power patterns are presented. It is found that 30°-60°-90° TDRA produces a peak in the broadside direction.