D Dzmitry Pustakhod

High-Resolution AWG-based fiber bragg grating interrogator

A novel InP-based monolithically integrated multi-wavelength detector is used as the central part of a fiber Bragg grating interrogator unit. We have designed the arrayed waveguide grating in the device such that at least two detectors have a significant signal at any wavelength being measured. Consequently, the measurement resolution is increased while keeping the area of device small. We demonstrate the resolution of the measurement to be 0.32 pm over a working range of 10 nm. The corresponding relative resolution of 0.003% is to our knowledge the best reported to date in an integrated interrogator.

Integrated High-Performance TE/TM Converters for Polarization Independence in Semiconductor Optical Amplifiers

Integrated polarization converters (PCs) with high (>99%) conversion efficiency open up many new possibilities in an InP-based photonic integrated circuit. In this paper, we describe how such a PC can be added to a circuit containing semiconductor optical amplifiers (SOAs), in order to obtain polarization independent amplification. Polarization independence is obtained by placing the PC halfway between two identical SOA sections. This approach has the advantage that no compromises in design and fabrication are needed. The polarization conversion is found to be very high, above 99.5%, when using a tolerant two-section PC. The extra insertion loss due to the converter is below 0.5 dB. The polarization-dependent gain (PDG) of the SOA reduces from 17 dB to only 0.3 dB by the inclusion of the PC. This is comparable to the best PDG values found in the literature with other techniques. The reduction is achieved over the whole C-band and for varying pump currents.

Method for Polarization-Resolved Measurement of Electroabsorption

Photonic integrated circuits often use semiconductor components such as amplifiers, detectors, and electroabsorption modulators. For a proper circuit design, it is important to know the absorption spectrum of these semiconductor optical components and how it depends on an applied electric field. We propose a fast and accurate method that uses a compact segmented contact structure to measure the absorption characteristics. The method is based on measuring the transmission of amplified spontaneous emission (ASE) from a single forward-biased section through a varying number of reversely biased absorbing sections. Provided the ASE source emits light in both polarizations, the method measures the absorption spectra for both polarization modes simultaneously, without the need for a polarization filter in the measurement setup.