D. Maneuski

Charged particle tracking with the Timepix ASIC

A prototype particle tracking telescope was constructed using Timepix and Medipix ASIC hybrid pixel assemblies as the six sensing planes. Each telescope plane consisted of one 1.4 cm2 assembly, providing a 256 ×256 array of 55μm square pixels. The telescope achieved a pointing resolution of 2.4μm at the position of the device under test. During a beam test in 2009 the telescope was used to evaluate in detail the performance of two Timepix hybrid pixel assemblies; a standard planar 300μm thick sensor, and 285μm thick double sided 3D sensor. This paper describes a charge calibration study of the pixel devices, which allows the true charge to be extracted, and reports on measurements of the charge collection characteristics and Landau distributions. The planar sensor achieved a best resolution of 4.0±0.1μm for angled tracks, and resolutions of between 4.4 and 11μm for perpendicular tracks, depending on the applied bias voltage. The double sided 3D sensor, which has significantly less charge sharing, was found to have an optimal resolution of 9.0±0.1μm for angled tracks, and a resolution of 16.0±0.2μm for perpendicular tracks. Based on these studies it is concluded that the Timepix ASIC shows an excellent performance when used as a device for charged particle tracking.

Pixelated detectors and improved efficiency for magnetic imaging in STEM differential phase contrast

The application of differential phase contrast imaging to the study of polycrystalline magnetic thin films and nanostructures has been hampered by the strong diffraction contrast resulting from the granular structure of the materials. In this paper we demonstrate how a pixelated detector has been used to detect the bright field disk in aberration corrected scanning transmission electron microscopy (STEM) and subsequent processing of the acquired data allows efficient enhancement of the magnetic contrast in the resulting images. Initial results from a charged coupled device (CCD) camera demonstrate the highly efficient nature of this improvement over previous methods. Further hardware development with the use of a direct radiation detector, the Medipix3, also shows the possibilities where the reduction in collection time is more than an order of magnitude compared to the CCD. We show that this allows subpixel measurement of the beam deflection due to the magnetic induction. While the detection and processing is data intensive we have demonstrated highly efficient DPC imaging whereby pixel by pixel interpretation of the induction variation is realised with great potential for nanomagnetic imaging.

The LHCb VELO upgrade

Abstract The LHCb experiment plans to have a fully upgraded detector and data acquisition system in order to take data with instantaneous luminosities up to 5 times greater than currently. For this reason the first tracking and vertexing detector, the VELO, will be completely redesigned to be able to cope with the much larger occupancies and data acquisition rates. Two main design alternatives, micro-strips or pixel detectors, are under consideration to build the upgraded detector. This paper describes the options presently under consideration, as well as a few highlights of the main aspects of the current R&D. Preliminary results using a pixel telescope are also presented.

Charge collection studies in irradiated HV-CMOS particle detectors

Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

A tuneable ultra-compact high-power, ultra-short pulsed, bright gamma-ray source based on bremsstrahlung radiation from laser-plasma accelerated electrons

The laser driven plasma wakefield accelerator is a very compact source of high energy electrons. When the quasi-monoenergetic beam from these accelerators passes through dense material, high energy bremsstrahlung photons are emitted in a collimated beam with high flux. We show how a source based on this emission process can produce more than 109 photons per pulse with a mean energy of 10 MeV. We present experimental results that show the feasibility of this method of producing high energy photons and compare the experimental results with GEANT4 Montecarlo simulations, which also give the scaling required to evaluate its suitability as method to produce radioisotopes via photo-nuclear reactions or for imaging applications.

Precision scans of the Pixel cell response of double sided 3D Pixel detectors to pion and X-ray beams

Three-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55μm pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0±0.5% is measured. After a 10o rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises to 99.8±0.5%. The double-sided 3D sensor shows significantly reduced charge sharing to neighbouring pixels compared to the planar device. The charge sharing results obtained from the X-ray beam study of the 3D sensor are shown to agree with a simple simulation in which charge diffusion is neglected. The devices tested are found to be compatible with having a region in which no charge is collected centred on the electrode columns and of radius 7.6±0.6μm. Charge collection above and below the columnar electrodes in the double-sided 3D sensor is observed.

First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

Silicon sensor technologies with reduced dead area at the sensors perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

Medipix2/Timepix detector for time resolved Transmission Electron Microscopy

We have investigated the use of a Timepix detector as a method for increasing the realisable temporal resolution of a conventional 200keV transmission electron microscope (TEM). Evaluation of both single and integral mode image exposures was performed. Single exposure mode images showed that the available electron beam current became the limiting factor for timescales < 100 μs. Analysis of integral mode images showed that exposures times down to 500 ns were possible but that increases in image intensity and noise occurred. The performance data obtained represents a significant performance improvement on current TEM CCD imaging detectors.

Medipix2 as a highly flexible scanning/imaging detector for transmission electron microscopy

The transmission electron microscope (TEM) is an indispensable tool for the study of magnetic micro- and nano-structures. High resolution digital detectors have largely replaced film as the primary detection method for electron microscopy. In this study we assess the benefits of using the Medipix2 chip, bump bonded to a 300 μm Si detector, as a flexible dual purpose detector for scanning/imaging mode operation on a Philips CM20 FEG TEM/STEM at the University of Glasgow. Specifically, the magnetic imaging modes of Fresnel and Differential phase contrast (DPC) were utilised and the performance of the Medipix chip compared to that of the CCD and the segmented photodiode normally used for these techniques. The Medipix detector matched the performance of the segmented detector for DPC imaging while offering greater flexibility in the approach. It also shown an improvement of > 60 in the signal to noise performance over the CCD used for Fresnel imaging.