D. Mehuys

Large-scale photonic integrated circuits

We present an overview of Infineras current generation of 100 Gb/s transmitter and receiver PICs as well as results from the next-generation 500 Gb/s PM-QPSK PICs.

Large-scale DWDM photonic integrated circuits: a manufacturable and scalable integration platform

Commercial scaling of electronic integrated circuits has proceeded at a fast pace once the initial hurdle to integration was overcome. Recently, it has been shown that record active and passive optical device counts, exceeding 50 discrete components, can be incorporated onto a single monolithic 100 Gbps DWDM transmitter PIC InP chip. We will investigate key production metrics for this large-scale PIC commercial device as well as other analogs to other III-V semiconductor commercial devices. Using the yield management tools pioneered by silicon based electronics, we will present data supporting their scalability and the manufacturability of these large-scale PICs

Fiber-coupled M-MOPA laser diode pumping a high-power erbium-doped fiber amplifier

Summary form only given. In this paper we demonstrate a high-power Er-doped fiber amplifier (EDFA) pumped by a compact, robustly packaged fiber-coupled M-MOPA (master oscillator power amplifier, resulting in saturation powers up to 24.8 dBm at 1.55-/spl mu/m wavelength. The light-current characteristics of a fiber-coupled M-MOPA are shown.

Volume manufacturing and deployment of large-scale photonic integrated circuits

Manufacturing statistics are presented for 100 Gb/s transmitter and receiver large-scale photonic integrated circuits (LS-PICs). The data demonstrate the feasibility of the cost-effective deployment and volume manufacturing of these devices

100 Gb/s (10/spl times/10 Gb/s) DWDM photonic integrated circuit transmitters and receivers

100 Gb/s transmitters and receivers are realized through the monolithic integration of over 50 discrete functions onto a single InP chip. The modules are capable of simultaneously transmitting and receiving 10 DWDM wavelengths at >10 Gb/s.

Ultra High Capacity WDM Photonic Integrated Circuits

Design and performance of large scale, dense wavelength division multiplexed InP transmitter and receiver photonic integrated circuits (PICs) are reviewed. The PICs are capable of transmitting and receiving up to 40 wavelengths at data rates up to 40 Gbit/s per channel.

Large Scale InP Photonic Integrated Circuits for High Speed Optical Transport

Radhakrishnan Nagarajan, Masaki Kato, Vince Dominic, Jacco Pleumeekers, Andrew Dentai, Peter Evans, Sheila Hurtt, Johan Bäck, Damien Lambert, Mark Missey, Atul Mathur, Sanjeev Murthy, Randal Salvatore, Charles Joyner, Richard Schneider, Mehrdad Ziari, Jeffrey Bostak, Mike Kauffman, Huan-Shang Tsai, Michael Van Leeuwen, Alan Nilsson, Robert Taylor, Stephen Grubb, David Mehuys, Fred Kish and David Welch Infinera, 1322 Bordeaux Drive, Sunnyvale, CA 94089 rnagarajan@infinera.com

High-power, diffraction-limited, external-cavity tunable diode lasers

In summary, a novel external-cavity tunable semiconductor quantum well laser is demonstrated. Diffraction-limited output powers up to 1.0 W CW have been achieved, and a tuning bandwidth of 200 nm has been accessed by interchanging gain elements within a common external cavity.<<ETX>>

High power, diffraction limited laser diodes

High power semiconductor laser diodes have many applications including satellite communications, printing, frequency doubling, and spectroscopy. Recent advances in the development of monolithically integrated master oscillator power amplifier configurations have resulted in the demonstration of single mode operation to output power in excess of 3 W CW. As a result the application of diode lasers to a greater variety of systems has begun and new applications are being raised which take advantage of the small size, efficient operation, and potential low cost. In this paper the characteristics of the M-MOPA architecture will be discussed.<<ETX>>