D. Seliuta

Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

The authors report on detection of terahertz radiation by high electron mobility nanometer InGaAs∕AlInAs transistors. The photovoltaic type of response was observed at the 1.8–3.1THz frequency range, which is far above the cutoff frequency of the transistors. The experiments were performed in the temperature range from 10to80K. The resonant response was observed and was found to be tunable by the gate voltage. The resonances were interpreted as plasma wave excitations in the gated two-dimensional electron gas. The minimum noise equivalent power was estimated, showing possible application of these transistors in sensing of terahertz radiation.

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.

Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov-Shur instability

The experiments on the dc current influence on resonant terahertz plasma wave detection in InGaAs∕InAlAs multichannel high electron mobility transistors are reported. We observed the line width shrinking when a dc current is applied. We show that this line width decrease is due to the current induced reduction of plasma wave damping and takes place because the current drives the system toward the Dyakonov-Shur plasma wave instability.

Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors

We report on the demonstration of narrow terahertz plasma wave resonant detection at low temperature in 200nm gate length InGaAs∕InAlAs multichannel high electron mobility transistors. We observe that the resonant detection linewidth is smaller than in full channel high electron mobility transistors. We interpret this shrinking by the effect of multichannel geometry that does not allow oblique plasma mode propagation along the channel.

High dielectric permittivity of percolative composites based on onion-like carbon

The broadband dielectric properties of the onion-like carbon (OLC) and polyurethane based composites of different compositions are presented for the frequency range of 20 Hz–3 GHz and 250–450 K temperatures. It is shown that an abrupt increase in the complex dielectric permittivity at the volume fraction of OLC 10% is associated with the onset of percolation. The revealed critical exponent and percolation point reasonably agree with theoretically predicted values. Composites with 10% of OLC exhibit dielectric permittivity as high as 2000 and conductivity as high as 0.01 S/m at 100 Hz.

Terahertz heterodyne imaging with InGaAs-based bow-tie diodes

Room-temperature detection and imaging in transmission and reflection geometries at 0.591 THz with planar asymmetrically shaped InGaAs diodes (also called bow-tie diodes) are demonstrated in direct and heterodyne mode. The sensitivity of the diodes is found to be 6 V/W in direct mode, and the noise-equivalent power (NEP) in direct and heterodyne mode is estimated to be about 4 nW/Hz and 230 fW/Hz for a local-oscillator power of 11 μW, respectively. The improvement of the dynamic range by heterodyning over direct power detection amounts to about 20 dB using pixel read-out times relevant to real-time imaging conditions.

Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 μm and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz.

InGaAs-based bow-tie diode for spectroscopic terahertz imaging

Suitability of InGaAs-based bow-tie diodes for a spectroscopic terahertz imaging is demonstrated by inspecting explosive simulators packed in a thick plastic container. The transmission images were obtained within the frequency range of 0.58-2.52 THz at room temperature using optimized bow-tie diode connection scheme. Content of sucrose and tartaric acid in the test samples was discriminated. Measured absorbance was found to be in a good correlation with Fourier spectroscopy data. Performance of room temperature THz imaging using the bow-tie diode was compared versus a commercial pyro-electric sensor.

Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors

Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30 nm gate length transistor was illuminated by THz radiation at room temperature. We observe a maximum signal near to the threshold voltage. This result clearly demonstrates the possibility of plasma wave THz operation of these nanometer scale devices. The response was attributed to a non resonant detection. We also demonstrate the possibility to observe a resonant detection on the same devices.

Soft cutting of single-wall carbon nanotubes by low temperature ultrasonication in a mixture of sulfuric and nitric acids.

To decrease single-wall carbon nanotube (SWCNT) lengths to a value of 100-200 nm, aggressive cutting methods, accompanied by a high loss of starting material, are frequently used. We propose a cutting approach based on low temperature intensive ultrasonication in a mixture of sulfuric and nitric acids. The method is nondestructive with a yield close to 100%. It was applied to cut nanotubes produced in three different ways: gas-phase catalysis, chemical vapor deposition, and electric-arc-discharge methods. Raman and Fourier transform infrared spectroscopy were used to demonstrate that the cut carbon nanotubes have a low extent of sidewall degradation and their electronic properties are close to those of the untreated tubes. It was proposed to use the spectral position of the far-infrared absorption peak as a simple criterion for the estimation of SWCNT length distribution in the samples.