Irmantas Kašalynas

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.

Terahertz heterodyne imaging with InGaAs-based bow-tie diodes

Room-temperature detection and imaging in transmission and reflection geometries at 0.591 THz with planar asymmetrically shaped InGaAs diodes (also called bow-tie diodes) are demonstrated in direct and heterodyne mode. The sensitivity of the diodes is found to be 6 V/W in direct mode, and the noise-equivalent power (NEP) in direct and heterodyne mode is estimated to be about 4 nW/Hz and 230 fW/Hz for a local-oscillator power of 11 μW, respectively. The improvement of the dynamic range by heterodyning over direct power detection amounts to about 20 dB using pixel read-out times relevant to real-time imaging conditions.

Antenna-coupled field-effect transistors for multi-spectral terahertz imaging up to 4.25 THz

We demonstrate for the first time the applicability of antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs) for multi-spectral imaging from 0.76 to 4.25 THz. TeraFETs were fabricated in a commercial 90-nm CMOS process and noise-equivalent powers of 59, 20, 63, 85 and 110 pW/√(Hz) at 0.216, 0.59, 2,52, 3.11 and 4.25 THz, respectively, have been achieved. A set of TeraFETs has been applied in raster-scan transmission and reflection imaging of pellets of sucrose and tartaric acid simulating common plastic explosives. Transmittance values are in good agreement with Fourier-transform infrared spectroscopy data. The spatial distribution of the components in the samples has been determined from the transmission data using principal component analysis.

Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 μm and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz.

InGaAs-based bow-tie diode for spectroscopic terahertz imaging

Suitability of InGaAs-based bow-tie diodes for a spectroscopic terahertz imaging is demonstrated by inspecting explosive simulators packed in a thick plastic container. The transmission images were obtained within the frequency range of 0.58-2.52 THz at room temperature using optimized bow-tie diode connection scheme. Content of sucrose and tartaric acid in the test samples was discriminated. Measured absorbance was found to be in a good correlation with Fourier spectroscopy data. Performance of room temperature THz imaging using the bow-tie diode was compared versus a commercial pyro-electric sensor.

Soft cutting of single-wall carbon nanotubes by low temperature ultrasonication in a mixture of sulfuric and nitric acids.

To decrease single-wall carbon nanotube (SWCNT) lengths to a value of 100-200 nm, aggressive cutting methods, accompanied by a high loss of starting material, are frequently used. We propose a cutting approach based on low temperature intensive ultrasonication in a mixture of sulfuric and nitric acids. The method is nondestructive with a yield close to 100%. It was applied to cut nanotubes produced in three different ways: gas-phase catalysis, chemical vapor deposition, and electric-arc-discharge methods. Raman and Fourier transform infrared spectroscopy were used to demonstrate that the cut carbon nanotubes have a low extent of sidewall degradation and their electronic properties are close to those of the untreated tubes. It was proposed to use the spectral position of the far-infrared absorption peak as a simple criterion for the estimation of SWCNT length distribution in the samples.

Continuous Wave Spectroscopic Terahertz Imaging With InGaAs Bow-Tie Diodes at Room Temperature

Continuous wave spectroscopic terahertz imaging with InGaAs bow-tie diodes is demonstrated at room temperature. Spectra and images of plastic explosive simulators prepared from tartaric acid and sucrose are recorded within the frequency range of 0.585-2.52 THz. The bow-tie diode performance and implementation for real-time imaging applications are discussed.

Detectors for terahertz multi-pixel coherent imaging and demonstration of real-time imaging with a 12x12-pixel CMOS array

We present recent developments of two kinds of compact room-temperature detectors for terahertz radiation. These are asymmetrically-shaped bow-tie diodes, and field-effect transistors with sub-micrometer channel lengths. Both kinds of detectors exhibit fast response times which allow operating them as mixers, moreover they are suitable for the fabrication of large multi-pixel arrays. Here, we provide data on the experimental performance of detector arrays and show their applicability in coherent terahertz imaging systems. In addition, we demonstrate real-time operation of a 12×12-pixel CMOS camera in power-detection mode at 590 GHz.

Effects of inclusion dimensions and p-type doping in the terahertz spectra of composite materials containing bundles of single-wall carbon nanotubes

Experiments recently showed that the finite lengths of single-wall carbon nanotubes (SWNTs) randomly dispersed and randomly aligned in a composite material are responsible for the appearance of a broad peak in its terahertz conductivity. We investigated, both theoretically and experimentally, the influences of the cross-sectional diameter and the acid-induced p-type doping of SWNT bundles in composite materials on their terahertz conductivity peaks (TCPs). We found that the TCP blue-shifts if the inclusion diameter is larger, and that doping enhances the effective conductivity of the composite material. But, a theoretical prediction of the blue-shifting of the TCP by p-type doping was only weakly supported by experimental evidence. All experimental observations turned out to be in good qualitative agreement with the concept of localized plasmon resonance in SWNTs.

Terahertz sensing with carbon nanotube layers coated on silica fibers: Carrier transport versus nanoantenna effects

Carbon nanotube layers prepared as coatings on silica fibers are found to be suitable for terahertz detection in 0.5–7.3 THz range within temperatures of 4.2–70 K. In time-domain of terahertz excitation, two following constituents in the photoresponse are discriminated: the first one is attributed to the bolometric effect while the other one is related to the photoconductivity caused by the terahertz-induced hopping effect. In frequency domain, nonmonotonic behavior of the photoconductivity is associated with prevailing carbon nanotube-induced antenna effects in the electronic transport. The experimental observations are supported by theoretical estimates.