Daichi Kozawa

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Exploring the Origin of Blue and Ultraviolet Fluorescence in Graphene Oxide

We studied the fluorescence (FL) properties of highly exfoliated graphene oxide (GO) in aqueous solution using continuous-wave and time-resolved FL spectroscopy. The FL spectra of highly exfoliated GO showed two distinct peaks at ∼440 (blue) and ∼300 nm [ultraviolet (UV)]. The FL of GO in the UV region at ∼300 nm was observed for the first time. The average FL lifetimes of the emission peaks at ∼440 and ∼300 nm are 8-13 and 6-8 ns, respectively. The experimentally observed peak wavelengths of pH-dependent FL, FL excitation spectra, and the FL lifetimes are nearly coincident with those of aromatic compounds bound with oxygen functional groups, which suggests that the FL comes from sp(2) fragments consisting of small numbers of aromatic rings with oxygen functional groups acting as FL centers in the GO.

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering.

Exciton–Plasmon Coupling and Electromagnetically Induced Transparency in Monolayer Semiconductors Hybridized with Ag Nanoparticles

Hybrid systems of excitons strongly coupled to localized surface plasmons supported by metallic nanoparticles define a new approach to control light-matter interactions. Here, we report exciton-plasmon coupling in two-dimensional (2D) semiconductors, such as MoS2 and WS2, hybridized with silver nanoparticles. Prominent photoluminescence enhancement in monolayer MoS2 was observed with localized surface plasmon resonance (LSPR) tuned to the exciton resonance. By tuning the excitation energy, the contributions from near field enhancement and radiative emission rate enhancement via Purcell effect were resolved. Strong coherent dipole-dipole coupling between excitons and LSPR in resonant condition manifests as an electromagnetically induced transparency window in the extinction spectra of the localized surface plasmon. In this strong coupling regime a new quasi-particle, known as a plexciton, is expected to exhibit distinct properties, which exist in neither of the original particles. Our results demonstrate that 2D semiconductors hybridized with plasmonic structures not only hold great promise in the applications of energy-harvesting and light-emitting devices, but also provide an attractive platform for fundamental investigations of exciton-plasmon interactions in the strong coupling regime.Exciton-plasmon coupling in hybrids of a monolayer transition metal dichalcogenide and Ag nanoparticles is investigated in the weak and strong coupling regimes. In the weak coupling regime, both absorption enhancement and the Purcell effect collectively modify the photoluminescence properties of the semiconductor. In the strong coupling regime, electromagnetically induced transparency dips are displayed, evidencing coherent energy exchange between excitons and plasmons.

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

Excitonic Photoluminescence from Nanodisc States in Graphene Oxides.

The origin of near-infrared (NIR) luminescence from graphene oxide (GO) is investigated by photoluminescence (PL) excitation spectroscopy, time-resolved PL spectroscopy, and density functional theory based many body perturbation theories. The energy of experimentally observed NIR PL peak depends on the excitation energy, and the peak broadens with increasing excitation energy. It is found that the PL decay curves in time-resolved spectroscopy show build-up behavior at lower emission energies due to energy transfer between smaller to larger graphene nanodisc (GND) states embedded in GO. We demonstrate that the NIR PL originates from ensemble emission of GND states with a few nanometers in size. The theoretical calculations reveal the electronic and excitonic properties of individual GND states with various sizes, which accounts for the inhomogeneously broadened NIR PL. We further demonstrate that the electronic properties are highly sensitive to the protonation and deprotonation processes of GND states using both the experimental and theoretical approaches.

Analysis of the Photovoltaic Properties of Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells

We studied the photovoltaic properties of single-walled carbon nanotube/Si (SWNT/Si) heterojunction cells. We observed an optimal thickness of the SWNT network film that maximizes the photovoltaic conversion efficiency. The spectra of incident photon to charge carrier efficiency indicate that the production of carriers in the Si layer mainly contributes to the photovoltaic conversion. The experimental results and loss analysis based on the equivalent circuit model suggest that the fabrication of a high-density semiconducting SWNT network at the interface of Si is the key to improving the conversion efficiency of the SWNT/n-Si heterojunction solar cell.

Enhancement Mechanism of the Photovoltaic Conversion Efficiency of Single-Walled Carbon Nanotube/Si Solar Cells by HNO3 Doping

We studied the enhancement mechanism of the photovoltaic conversion efficiency of single-walled carbon nanotube (SWNT)/Si heterojunction solar cells by nitric acid (HNO3) doping in the dried condition. The conversion efficiency enhanced by HNO3 doping strongly depends on the thickness of the SWNT network film. From the analysis of thickness-dependent current–voltage characteristics, we found that the enhancement resulted from not only a decrease in the series resistance of the SWNT network film, but also an increase in the p–n junction density due to an increase in the carrier density of SWNTs.

Colloidal nanoelectronic state machines based on 2D materials for aerosolizable electronics

A previously unexplored property of two-dimensional electronic materials is their ability to graft electronic functionality onto colloidal particles to access local hydrodynamics in fluids to impart mobility and enter spaces inaccessible to larger electronic systems. Here, we demonstrate the design and fabrication of fully autonomous state machines built onto SU-8 particles powered by a two-dimensional material-based photodiode. The on-board circuit connects a chemiresistor circuit element and a memristor element, enabling the detection and storage of information after aerosolization, hydrodynamic propulsion to targets over 0.6 m away, and large-area surface sensing of triethylamine, ammonia and aerosolized soot in inaccessible locations. An incorporated retroreflector design allows for facile position location using laser-scanning optical detection. Such state machines may find widespread application as probes in confined environments, such as the human digestive tract, oil and gas conduits, chemical and biosynthetic reactors, and autonomous environmental sensors.Colloidal state machines, composed of 2D nanoelectronics grafted onto submillimetre-sized particles, act as autonomous electronic circuits capable of logical operation and information storage.

Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsiv...