Daisuke Nishide
National Institute of Advanced Industrial Science and Technology
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Publication
Featured researches published by Daisuke Nishide.
Nature Communications | 2011
Huaping Liu; Daisuke Nishide; Takeshi Tanaka; Hiromichi Kataura
Monostructured single-wall carbon nanotubes (SWCNTs) are important in both scientific research and electronic and biomedical applications; however, the bulk separation of SWCNTs into populations of single-chirality nanotubes remains challenging. Here we report a simple and effective method for the large-scale chirality separation of SWCNTs using a single-surfactant multicolumn gel chromatography method utilizing one surfactant and a series of vertically connected gel columns. This method is based on the structure-dependent interaction strength of SWCNTs with an allyl dextran-based gel. Overloading an SWCNT dispersion on the top column results in the adsorption sites of the column becoming fully occupied by the nanotubes that exhibit the strongest interaction with the gel. The unbound nanotubes flow through to the next column, and the nanotubes with the second strongest interaction with the gel are adsorbed in this stage. In this manner, 13 different (n, m) species were separated. Metallic SWCNTs were finally collected as unbound nanotubes because they exhibited the lowest interaction with the gel.
Applied Physics Express | 2009
Takeshi Tanaka; Yasuko Urabe; Daisuke Nishide; Hiromichi Kataura
We have developed a novel method to separate metallic and semiconducting single-wall carbon nanotubes (SWCNTs) with high purities using agarose gel. When an SWCNTs/sodium dodecyl sulfate (SDS) dispersion was applied to a column containing agarose gel beads, semiconducting SWCNTs were trapped by the beads, while metallic SWCNTs passed through the column. After the semiconducting SWCNTs adsorbed to the beads were eluted with sodium deoxycholate solution, the column could be used for repeated separation. Because this continuous, repeatable separation method is applicable to a low-cost, large-scale process, it should enable the industrial production of metallic and semiconducting SWCNTs.
Journal of the American Chemical Society | 2011
Takeshi Tanaka; Yasuko Urabe; Daisuke Nishide; Hiromichi Kataura
We report novel surfactants that can be used for the separation of metallic (M) and semiconducting (S) single-wall carbon nanotubes (SWCNTs). Among the M/S separation methods using surfactants in an aqueous solution, sodium dodecyl sulfate plays a key role in density gradient ultracentrifugation (DGU) and agarose gel separations. In this study, we screened 100 surfactants for M/S separation using a high-throughput screening system. We identified five surfactants, which could be used for both DGU and agarose gel separations, suggesting that the basic principle of these separations is common. These surfactants have relatively low dispersibilities, which is likely due to their common structural features, i.e., straight alkyl tails and charged head groups, and appeared to enable M- and S-SWCNTs to be distinguished and separated. These surfactants should stimulate research in this field and extend the application of electrically homogeneous SWCNTs not only for electronics but also for biology and medicine.
Advanced Materials | 2011
Yoko Matsuzawa; Haruhisa Kato; Harumi Ohyama; Daisuke Nishide; Hiromichi Kataura; Masaru Yoshida
Although single-walled carbon nanotubes (SWNTs) exhibit superior mechanical and electrical properties, [ 1 ] the industrial applications of SWNTs have been hindered by their insolubility in many conventional solvents. Bundled aggregates due to strong intertubular van der Waals interactions cause the poor solubility, which acts as an obstacle to both the purifi cation and handling of the SWNTs. In order to improve the solubility and to expand the potential application areas of the SWNTs, various approaches including covalent and noncovalent modifi cations have been reported. [ 2 ] In particular, noncovalent methods using solubilizing agents are of particular of interest because well-dispersed SWNTs can be easily prepared without a signifi cant decrease in the intrinsic electronic properties. Recently, a number of such dispersants with stimuli responsibility have been reported because tuning of the dispersibility of the SWNTs is desirable in many applications including switching devices, sensors, and drug delivery systems. For example, such dispersion or release control of the SWNTs has been examined using a metal complex, [ 3 ] a natural product, [ 4 ] and stimuli-responsive polymeric dispersants. [ 5 , 6 ]
Japanese Journal of Applied Physics | 2009
Daisuke Nishide; Yasumitsu Miyata; Kazuhiro Yanagi; Takeshi Tanaka; Hiromichi Kataura
A quick and effective method for the separation of single-wall carbon nanotubes (SWCNTs) from impurity particles has been demonstrated. High-purity SWCNTs and impurities, such as metal particles and amorphous carbons, were separated by ultracentrifugation from raw soot containing SWCNTs. The purity of each component was evaluated by scanning electron microscopy, thermogravimetric analysis, and Raman spectroscopy. The advantage of this method is that the impurity particles can be collected as residual soot in the ultracentrifugation process without any loss, while the impurity particles are more or less chemically modified or disappeared in previous purification protocols. The present technique can provide suitable samples for the research of both SWCNTs and impurity particles, particularly for nano-risk assessment.
Japanese Journal of Applied Physics | 2015
Li Zhang; Masayuki Katagiri; Taishi Ishikura; Makoto Wada; Hisao Miyazaki; Daisuke Nishide; Takashi Matsumoto; Naoshi Sakuma; Akihiro Kajita; Tadashi Sakai
Graphene is a promising material to replace Cu-interconnect metallization under a width of 10 nm. We report a method for evaluating the graphene interconnect wiring structure by conductive atomic force microscopy (C-AFM), which enables the direct measurement of the two-dimensional (2D) resistance distribution and the coverage evaluation of multilayer graphene (MLG) grown on Ni interconnects using a 300 mm damascene process. The resistivity of exfoliated two-layer graphene was measured and a reasonable value of 30 µΩcm was obtained. We also measured the resistance of the MLG/Ni stack of 350 nm L/S patterns and confirmed the conduction paths of the MLG/Ni stack. It is demonstrated that the coverage of MLG on Ni interconnects can be estimated more precisely by C-AFM than by backscattered electron scanning electron microscopy (BSE-SEM) observation. C-AFM is demonstrated to be a potential technique for the local conductance evaluation of next-generation interconnects.
Proceedings of International Conference on Planarization/CMP Technology 2014 | 2014
Ban Ito; Makoto Wada; Tatsuro Saito; Daisuke Nishide; Takashi Matsumoto; Masayuki Katagiri; Masahito Watanabe; Naoshi Sakuma; Akihiro Kajita; Tadashi Sakai
We have developed a CMP process providing a short polishing time and sufficient uniformity that is applicable to 300 mm scale carbon nanotube (CNT) via integration. To achieve our target, we have developed a new CMP process to make selectively grown CNT in a via hole. Spin on carbon (SOC)film was coated to protect nickel (Ni) catalyst and titanium nitride (TiN) film inside the via hole during SOC-CMP. The SOC-CMP process was used to perform two-step polishing to remove Ni catalyst and TiN film from the field area. CNT-CMP polishing time was reduced from 1690 sec to 200 sec and the yield ratio improved to 100%. CNT-CMP performance improved to a level usable for practical use by selectively growing CNT only from the via. We also evaluated the behavior of CNT-CMP during polishing using a damascene pattern wafer. Step height (Step height means a step between the wiring area and field area) occurred when CNT-SOG (spin-on glass) composite film was appeared upper the via hole but was reduced by concentrating the polishing pressure to project the CNT-SOG composite film. This result indicates that CNT-SOG composite film was polished by mechanical force.
Physica Status Solidi B-basic Solid State Physics | 2009
Takeshi Tanaka; Hehua Jin; Yasumitsu Miyata; Shunjiro Fujii; Daisuke Nishide; Hiromichi Kataura
Physica Status Solidi B-basic Solid State Physics | 2010
Takeshi Tanaka; Yasuko Urabe; Daisuke Nishide; Huaping Liu; Satoshi Asano; Satoko Nishiyama; Hiromichi Kataura
Diamond and Related Materials | 2009
Kazuhiro Yanagi; Yasumitsu Miyata; Takeshi Tanaka; Shunjiro Fujii; Daisuke Nishide; Hiromichi Kataura
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Dive into the Daisuke Nishide's collaboration.
National Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
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