Damien Bordel

Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage

We report the fabrication of InAs/GaAs quantum dot solar cells (QDSCs) with enhanced photocurrent and no degradation in open circuit voltage (VOC) compared to a solar cell grown without QDs and composed solely of wetting layers. Notably, the achievement of such high VOC does not require electronic coupling. We report QDSCs with a light absorption range extended up to 1.3 μm and evidence a trade-off between VOC and QD ground-state energy. These results are of major significance to the design of high efficiency QDSCs.

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

We report the first Si/III-V Fabry-Perot laser based on adiabatic mode transformers. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is ∼7mW.

Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).

High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition

We fabricate a high-efficiency InAs/GaAs quantum dot (QD) solar cell. It contains five layers of high-density self-assembled InAs QDs grown by metalorganic chemical vapor deposition suppressing open-circuit-voltage (VOC) degradation. We develop a dual-layer anti-reflection coating of optimum thicknesses. The resulting cell exhibits efficiencies of 18.7% under AM1.5 G for 1 sun and 19.4% for 2 suns. Concentrator measurements demonstrate the advantage of QD use under concentrated illumination, owing to the significant increase in VOC. We also find a VOC offset of 0.3 V from the QD ground-state transition energies for QD cells, in contrast to 0.4 V for state-of-the-art bulk semiconductor cells.

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Quasi-3D Light Confinement in Double Photonic Crystal Reflectors VCSELs for CMOS-Compatible Integration

A novel architecture of one-dimensional photonic crystal membrane (PCM) reflectors embodying a heterostructure is proposed as a robust design aimed at a 3-D efficient confinement of light in single-mode polarization-controlled 1.55-μm vertical-cavity surface-emitting laser (VCSEL) microsources for heterogeneous integration on complementary metal-oxide-semiconductor (CMOS). On the basis of a theoretical approach, the paper focuses on the deep interweaving between the kinetics of light transport in the mirrors and the physical nature of the exploited Fano resonances. An example of VCSEL design for optical pumping employing heterostructure-confined photonic crystal mirrors is presented. The predicted photons kinetics along with the considerable improvement in cavity modal features owing to the enhanced mirror architecture have been confirmed by performing rigorous three-dimensional finite-difference time-domain (3-D FDTD) calculations. Finally, experimental observations of photoluminescence (PL) emission performed on first-ever fabricated devices for optical pumping show striking agreement with theoretical considerations and ab initio modelling.

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

We report the growth of self-assembled InAs/GaAs quantum dots (QDs) on germanium-on-insulator-on-silicon (GeOI) substrate by metal organic chemical vapor deposition. We demonstrate that the introduction of a single QD layer can act as an anti-phase-domain filter resulting in GaAs/GeOI layers with high structural quality and low surface roughness. High density (4×1010 cm−2) QDs were obtained with emission at 1.3 μm, narrow peak linewidth (33 meV), and identical photoluminescence intensity at room temperature similar to QDs obtained on conventional GaAs substrate. These results show the feasibility of the GeOI platform for the monolithic integration of QD-based lasers on silicon.

Widely wavelength tunable hybrid III–V/silicon laser with 45 nm tuning range fabricated using a wafer bonding technique

A hybrid III-V on silicon laser, integrating two intra-cavity ring resonators, is fabricated by using a wafer bonding technique. It achieves a thermal tuning range of 45 nm, with side mode suppression ratio higher than 40 dB.