Damien Valente

Non-oxidized porous silicon-based power AC switch peripheries

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

Investigation of direct current electrical properties of electrochemically etched mesoporous silicon carbide

In this study, we show I-V characterizations of various metal/porous silicon carbide (pSiC)/silicon carbide (SiC) structures. SiC wafers were electrochemically etched from the Si and C faces in the dark or under UV lighting leading to different pSiC morphologies. In the case of low porosity pSiC etched in the dark, the I-V characteristics were found to be almost linear and the extracted resistivities of pSiC were around 1.5 × 104 Ω cm at 30 °C for the Si face. This is around 6 orders of magnitude higher than the resistivity of doped SiC wafers. In the range of 20-200 °C, the activation energy was around 50 meV. pSiC obtained from the C face was less porous and the measured average resistivity was 10 Ω cm. In the case high porosity pSiC etched under UV illumination, the resistivity was found to be much higher, around 1014 Ω cm at room temperature. In this case, the extracted activation energy was estimated to be 290 meV.

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

The formation of thick mesoporous silicon layers in P+-type substrates leads to an increase in the porosity from the surface to the interface with silicon. The adjustment of the current density during the electrochemical etching of porous silicon is an intuitive way to control the layer in-depth porosity. The duration and the current density during the anodization were varied to empirically model porosity variations with layer thickness and build a database. Current density profiles were extracted from the model in order to etch layer with in-depth control porosity. As a proof of principle, an 80 μm-thick porous silicon multilayer was synthetized with decreasing porosities from 55% to 35%. The results show that the assessment of the in-depth porosity could be significantly enhanced by taking into account the pure chemical etching of the layer in the hydrofluoric acid-based electrolyte.

Shape-controlled electrochemical synthesis of mesoporous Si/Fe nanocomposites with tailored ferromagnetic properties

This study reports on an original and efficient way to synthesize iron nanowires and cubic-shaped nanoparticles by electrochemical deposition on a mesoporous silicon host and its impact on magnetic properties. The selective growth of iron nanostructures inside the pores can be achieved, thanks to the presence of a native oxide layer on the pore walls, suggesting a surface-state assisted electrochemical process. Because of hydrogen coevolution, the pH of the solution controls the shape of the iron nanostructures (particles or wires) while the electrodeposition current density can be adjusted to suppress the parasitic deposition on top of the structure. Under optimal conditions, nanowires with lengths up to 2 μm are synthesized after 15 seconds of deposition. Magnetic characterization of the ferromagnetic nanowire composite exhibits an easy axis of magnetization in the pore direction due to shape anisotropy with a remanence ratio of 0.6. The shape anisotropy of the nanoparticle composite is weaker than for the nanowire composite because of the homogeneous dispersion of the particles. The versatility of the mesoporous silicon framework is thus a considerable asset to tune the nanocomposite’s magnetic properties.