Dan-Xia Xu

Refractive index engineering with subwavelength gratings for efficient microphotonic couplers and planar waveguide multiplexers

We use subwavelength gratings (SWGs) to engineer the refractive index in microphotonic waveguides, including practical components such as input couplers and multiplexer circuits. This technique allows for direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6-3.5 by lithographic patterning. We demonstrate two experimental examples of refractive index engineering, namely, a microphotonic fiber-chip coupler with a coupling loss as small as -0.9dB and minimal wavelength dependence and a planar waveguide multiplexer with SWG nanostructure, which acts as a slab waveguide for light diffracted by the grating, while at the same time acting as a lateral cladding for the strip waveguide. This yields an operation bandwidth of 170nm for a device size of only approximately 160microm x100microm.

Subwavelength grating periodic structures in silicon-on-insulator: a new type of microphotonic waveguide

We report on the experimental demonstration and analysis of a new waveguide principle using subwavelength gratings. Unlike other periodic waveguides such as line-defects in a 2D photonic crystal lattice, a subwavelength grating waveguide confines the light as a conventional index-guided structure and does not exhibit optically resonant behaviour. Subwavelength grating waveguides in silicon-on-insulator are fabricated with a single etch step and allow for flexible control of the effective refractive index of the waveguide core simply by lithographic patterning. Experimental measurements indicate a propagation loss as low as 2.1 dB/cm for subwavelength grating waveguides with negligible polarization and wavelength dependent loss, which compares favourably to conventional microphotonic silicon waveguides. The measured group index is nearly constant n(g) ~1.5 over a wavelength range exceeding the telecom C-band.

Waveguide grating coupler with subwavelength microstructures

We propose a silicon waveguide-fiber grating coupler that uses a subwavelength microstructure to achieve a continuously variable grating strength yet can be fabricated using only a single etch step. By adjusting the subwavelength microstructure at every point along the grating, the grating coupler can be optimized to give high field overlap with the optical fiber mode and also minimize backreflections along the incident waveguide path. Our design example is optimized for quasi-TM mode in a silicon photonic-wire waveguide, as required for waveguide evanescent-field-sensing applications. A field overlap of up to 94% with a standard single-mode optical fiber (SMF-28) is achieved by coupler apodization. Backreflection from the grating is reduced to ~0.1%, and the total predicted photonic wire to fiber coupling efficiency is 50%.

Subwavelength grating crossings for silicon wire waveguides

We report on the design, simulation and experimental demonstration of a new type of waveguide crossing based on subwavelength gratings in silicon waveguides. We used 3D finite-difference time-domain simulations to minimize loss, crosstalk and polarization dependence. Measurement of fabricated devices show that our waveguide crossings have a loss as low as -0.023 dB/crossing, polarization dependent loss of < 0.02 dB and crosstalk <-40 dB.

Subwavelength waveguide grating for mode conversion and light coupling in integrated optics.

We propose a new method for mode conversion and coupling between an optical fiber and a sub-micrometer waveguide using a subwavelength grating (SWG) with a period less than the 1st order Bragg period. The coupler principle is based on gradual modification of the waveguide mode effective index by the SWG effect that at the same time frustrates diffraction and minimizes reflection loss. We demonstrate the proposed principle by two-dimensional Finite Difference Time Domain (FDTD) calculations of various SWG structures designed for the silicon-on-insulator (SOI) platform with a Si core thickness of 0.3 microm. We found a coupling loss as small as 0.9 dB for a 50 microm-long SWG device and low excess loss due to fiber misalignment, namely 0.07 dB for a transverse misalignment of +/-1 microm, and 0.24 dB for an angular misalignment of +/-2 degrees. Scaling of the SWG coupler length down to 10 microm is also reported on an example of a 2D slab waveguide coupling structure including aspect ratio dependent etching and micro-loading effects. Finally, advantages of the proposed coupling principle for fabricating 3D coupling structures are discussed.

Planar waveguide echelle gratings in silica-on-silicon

Silica planar waveguide echelle grating demultiplexers with 48 channels and 256 channels are described and demonstrated. Polarization effects due to stress birefringence and polarization-dependent grating efficiency have been eliminated using a modified polarization compensator and grating design. The devices have a polarization-dependent wavelength shift of less than 10 pm, and a polarization-dependent loss below 0.2 dB. The 48-channel device has a measured crosstalk of -35 dB, an insertion loss better than 4 dB, and a uniformity of 1 dB across the C-band.

Roadmap on silicon photonics

Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

High bandwidth SOI photonic wire ring resonators using MMI couplers

A ring resonator in SOI photonic wire waveguides is demonstrated using a compact MMI coupler with 3mum x 9 mum footprint as the coupling element. We achieved high bandwidth of 0.25 nm, and a quality factor Q of ~ 6000 for rings with a radius of 50 mum. Unlike directional coupler based rings, these resonators have a wavelength independent Q and extinction ratio over more than 30 nm wavelength range, and there is no loss penalty for increasing the bandwidth. Compared to their directional coupler based counterparts, these resonators also have less demanding fabrication requirements and are compatible with high speed signal processing and optical delay lines.

Birefringence control using stress engineering in silicon-on-insulator (SOI) waveguides

We demonstrate that stress engineering is an effective tool to modify or eliminate polarization dispersion in silicon-on-insulator (SOI) waveguide devices, for a wide range of waveguide cross-section shapes and dimensions. The stress-induced effects on the modal birefringence of SOI waveguides are investigated numerically and experimentally. Finite-element simulations show that while the birefringence of ridge waveguides with both slanted and vertical sidewalls can be effectively modified using cladding stress, the birefringence becomes much less sensitive to dimension fluctuations with decreasing sidewall slope. To efficiently simulate the stress-induced effects we propose a normalized plane-strain model which can achieve comparable accuracy as a fully generalized plane-strain model but requires significantly less computational resources. Excellent agreement is achieved between the calculated and measured birefringence tuning using SiO/sub 2/ cladding induced stress. Finally, both calculations and experiments confirm that cladding induced stress can be used to eliminate the birefringence in SOI waveguides of arbitrary shapes, for typical SiO/sub 2/ film stress values (/spl sigma//sub film//spl ap/-100 to -300 MPa) and cladding thicknesses of the order of 1 /spl mu/m or less.

Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide.

The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.