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Dive into the research topics where Dana A. Gronbeck is active.

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Featured researches published by Dana A. Gronbeck.


Proceedings of SPIE, the International Society for Optical Engineering | 1999

Methacrylate resists and antireflective coatings for 193-nm lithography

Gary N. Taylor; Peter Trefonas; Charles R. Szmanda; George G. Barclay; Robert J. Kavanagh; Robert F. Blacksmith; Lori Anne Joesten; Michael J. Monaghan; Suzanne Coley; Zhibiao Mao; James F. Cameron; Ricky Hardy; Dana A. Gronbeck; S. Connolly

Methacrylates were the first class of resist to be examined for use in 193nm lithography. They are still useful today, but have a very different molecular structure because of the requirements for development in 0.262N tetramethyl ammonium hydroxide and high etching resistance. A major driving force for their continued use is the availability of a wide variety of methacrylate monomers and the use of free racial polymerization which imparts a wide range of properties to the polymers and makes them very cost effective.


Proceedings of SPIE, the International Society for Optical Engineering | 1999

Planarizing AR for DUV lithography

Timothy G. Adams; Suzanne Coley; Manuel Docanto; Dana A. Gronbeck; Matthew King; Edward K. Pavelchek

A systematic approach was taken in order to improve the planarity of a DUV anti reflectant (AR) utilized for various lithographic steps, particularly those involving a patterned transparent layer. These layers can occur in both front and back end processing. Two approaches were pursued to accomplish this. The first approach was to minimize the molecular weight of the AR polymer. Polymers with weight average molecular weights from 45,000 daltons to as low as 2,300 daltons were evaluated. The planarity of the AR improved significantly for polymers with Mws below 20,000 daltons. The second approach was to add plasticizers in order to reduce the glass transition temperature of the precrosslinked film. The addition of plasticizers to the AR was effective in increasing the planarity. One of the plasticizers contained a DUV chromophore used to maintain the required optical density of the AR. It was proven possible to make these changes while maintaining lithographic performance in both resist profiles and reflection control.


Archive | 2011

Air gap formation

Michael K. Gallagher; Dana A. Gronbeck; Timothy G. Adams; Jeffrey M. Calvert


Archive | 2003

Multilayer photoresist systems

James F. Cameron; Dana A. Gronbeck; George G. Barclay


Archive | 2003

Air gaps formation

Michael K. Gallagher; Dana A. Gronbeck; Timothy G. Adams; Jeffrey M. Calvert


Archive | 2001

Reduction of inorganic contaminants in polymers and photoresist compositions comprising same

Dana A. Gronbeck; Suzanne Coley; Chi Q. Truong; Ashish Pandya


Archive | 2007

Electronic devices having air gaps

Michael K. Gallagher; Dana A. Gronbeck; Timothy G. Adams; Jeffrey M. Calvert


Archive | 2003

Dielectric material for electronic devices

Dana A. Gronbeck; Michael K. Gallagher; Jeffrey M. Calvert; Timothy G. Adams


Archive | 2003

Methods for depositing pinhole-defect free organic polysilica coatings

Timothy G. Adams; Jeffrey M. Calvert; Michael K. Gallagher; Dana A. Gronbeck; Gregory P. Prokopowicz


Archive | 2006

Antireflex-Zusammensetzungen für Hartmasken

Dana A. Gronbeck; Amy M. Kwok; Michael K. Gallagher; Anthony Zampini

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