Daniel A. Bender
Sandia National Laboratories
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Featured researches published by Daniel A. Bender.
arXiv: Optics | 2014
Sheng Liu; Michael B. Sinclair; Thomas S. Mahony; Young Chul Jun; Salvatore Campione; James C. Ginn; Daniel A. Bender; Joel R. Wendt; Jon F. Ihlefeld; Paul G. Clem; Jeremy B. Wright; Igal Brener
The reflection of an optical wave from metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieving high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a “magnetic mirror” that does not reverse the phase of the reflected electric field. At optical frequencies, the magnetic properties required for strong interaction can be achieved only by using artificially tailored materials. Here, we experimentally demonstrate, for the first time to the best of our knowledge, the magnetic mirror behavior of a low-loss all-dielectric metasurface at infrared optical frequencies through direct measurements of the phase and amplitude of the reflected optical wave. The enhanced absorption and emission of transverse-electric dipoles placed close to magnetic mirrors can lead to exciting new advances in sensors, photodetectors, and light sources.
Applied Physics Letters | 2013
Daniel A. Bender; Jeffrey G. Cederberg; Chengao Wang; Mansoor Sheik-Bahae
We report on the growth and characterization of high external quantum efficiency (EQE) GaAs/GaInP double heterostructures. By properly treating the GaAs/GaInP interface, we are able to produce structures measuring a record EQE of 99.5% ± 0.1% in GaAs. This efficiency exceeds the requirement for achieving laser cooling in GaAs. However, net cooling has not yet been realized due to residual below gap background absorption.
Proceedings of SPIE, the International Society for Optical Engineering | 2006
Babak Imangholi; Michael P. Hasselbeck; Daniel A. Bender; Chengao Wang; Mansoor Sheik-Bahae; Richard I. Epstein; Sarah Kurtz
We demonstrate a non-contact, spectroscopic technique to measure the temperature change of semiconductors with very high precision. A temperature resolution of less than 100 μK has been obtained with bulk GaAs. This scheme finds application in experiments to study laser cooling of solids. We measure a record external quantum efficiency of 99% for a GaAs device.
Optics Letters | 2007
Daniel A. Bender; Mansoor Sheik-Bahae
A method for generation of the modified spectrum autointerferometric correlation that allows single-shot pulse characterization is demonstrated. A sensitive graphical representation of the ultrashort pulse phase quality is introduced that delineates the difference between the presence of temporal and spectral phase distortions. Using these schemes, full-field reconstruction of ultrashort laser pulses is obtained in real time using an efficient iterative technique.
Optics Letters | 2006
Daniel A. Bender; Michael P. Hasselbeck; Mansoor Sheik-Bahae
The chirp of an ultrashort laser pulse can be extracted with high accuracy from a modified spectrum auto-interferometric correlation waveform by using a new time domain algorithm that allows signal averaging. We display results revealing high sensitivity to chirp even with signal-to-noise levels approaching unity. Correction algorithms have been developed to accommodate signal distortion arising from bandwidth limitations, interferometer misalignment, and nonquadratic detector response.
Applied Physics Letters | 2013
Thomas S. Mahony; Daniel A. Bender; Michael B. Sinclair; Igal Brener
We built a mid-infrared time-domain spectroscopy (TDS) system optimized for the 8–12 μm spectral range based on a compact ultrafast Erbium:fiber laser that enables measurements of phase-resolved optical field transients directly in the time domain with high stability and spectral brightness. We achieved long term (>10 h) stability of the TDS signal by using a carrier-envelope-phase locking technique to reduce the timing jitter caused by environmental changes. Time domain measurements of the mid-infrared beam were achieved via electro-optic sampling in a GaSe crystal, using an ultrashort (∼15 fs) output of the fiber laser. Here, we present a full characterization of our TDS system including the dependence of the amplitude and pulse shape of the detected infrared waveforms on the thickness of the GaSe crystals.
Optics Express | 2008
Daniel A. Bender; Jeffrey W. Nicholson; Mansoor Sheik-Bahae
Sensitive, real-time chirp and spectral phase diagnostics along with full field reconstruction of femtosecond laser pulses are performed using a single rapid-scan interferometric autocorrelator. Through the use of phase retrieval error maps, ambiguities in pulse retrievals based on the pulse spectrum and various forms of MOSAIC traces are discussed. We show second-order autocorrelations can introduce significantly different amounts of chirp depending on the implementation. Examples are presented that illustrate the sensitivity and fidelity of the scheme even with low signal-to-noise.
Proceedings of SPIE | 2007
Daniel A. Bender; Michael P. Hasselbeck; Mansoor Sheik-Bahae
We investigate the role of surface defects on semiconductor fluorescence lifetime using near-field scanning optical microscopy (NSOM) and time correlated single photon counting (TCSPC). A conventional far-field microscope is used to excite a GaAs sample and subsequent fluorescence is collected with a fiber coupled near-field probe. With the application of custom fitting algorithms, we find fluorescence lifetimes in the vicinity of surface defects to be significantly reduced with respect to fluorescence lifetimes measured in defect free regions.
Optical Science and Technology, the SPIE 49th Annual Meeting | 2004
Michael P. Hasselbeck; Mansoor Sheik-Bahae; J. Thiede; James Distel; Scott R. Greenfield; Wendy Patterson; Stefano Bigotta; Babak Imangholi; Denis V. Seletskiy; Daniel A. Bender; Venkatesh Vankipuram; Nima Vadiee; Richard I. Epstein
We present an overview of laser cooling of solids. In this all-solid-state approach to refrigeration, heat is removed radiatively when an engineered material is exposed to high power laser light. We report a record amount of net cooling (88 K below ambient) that has been achieved with a sample made from doped fluoride glass. Issues involved in the design of a practical laser cooler are presented. The possibility of laser cooling of semiconductor sensors is discussed.
Archive | 2015
Daniel A. Bender; Christopher T. DeRose; Andrew Starbuck; Jason C. Verley; Mark W. Jenkins
We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.