Jeremy B. Wright

Optical magnetic mirrors without metals

The reflection of an optical wave from metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieving high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a “magnetic mirror” that does not reverse the phase of the reflected electric field. At optical frequencies, the magnetic properties required for strong interaction can be achieved only by using artificially tailored materials. Here, we experimentally demonstrate, for the first time to the best of our knowledge, the magnetic mirror behavior of a low-loss all-dielectric metasurface at infrared optical frequencies through direct measurements of the phase and amplitude of the reflected optical wave. The enhanced absorption and emission of transverse-electric dipoles placed close to magnetic mirrors can lead to exciting new advances in sensors, photodetectors, and light sources.

Single-mode GaN nanowire lasers

We demonstrate stable, single-frequency output from single, as-fabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ~0.12 nm and >18 dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth.

Two-color multi-section quantum dot distributed feedback laser

A dual-wavelength emission source is realized by asymmetrically pumping a two-section quantum-dot distributed feedback laser. It is found that under asymmetric bias conditions, the powers between the ground-state and excited-state modes of the two-section device can be equalized, which is mainly attributed to the unique carrier dynamics of the quantum-dot gain medium. As a result, a two-color emission with an 8-THz frequency difference is realized that has potential as a compact THz source. It is also shown that the combination of significant inhomogeneous broadening and excited-state coupled mode operation allows the manipulation of the quantum-dot states through external optical stabilization.

Directional perfect absorption using deep subwavelength low-permittivity films

We experimentally demonstrate single beam directional perfect absorption (to within experimental accuracy) of

Multi-Colour Nanowire Photonic Crystal Laser Pixels

p

Single-mode lasing of GaN nanowire-pairs

-polarized light in the near-infrared using unpatterned, deep subwavelength films of indium tin oxide (ITO) on Ag. The experimental perfect absorption occurs slightly above the epsilon-near-zero (ENZ) frequency of ITO, where the permittivity is less than 1 in magnitude. Remarkably, we obtain perfect absorption for films whose thickness is as low as \ensuremath{\sim}1/50th of the operating free-space wavelength and whose single pass attenuation is only \ensuremath{\sim}5%. We further derive simple analytical conditions for perfect absorption in the subwavelength-film regime that reveal the constraints that the thin layer permittivity must satisfy if perfect absorption is to be achieved. Then, to get a physical insight on the perfect absorption properties, we analyze the eigenmodes of the layered structure by computing both the real-frequency/complex-wavenumber and the complex-frequency/real-wavenumber modal dispersion diagrams. These analyses allow us to attribute the experimental perfect absorption condition to the crossover between bound and leaky behavior of one eigenmode of the layered structure. Both modal methods show that perfect absorption occurs at a frequency slightly larger than the ENZ frequency, in agreement with experimental results, and both methods predict a second perfect absorption condition at higher frequencies, attributed to another crossover between bound and leaky behavior of the same eigenmode. Our results greatly expand the list of materials that can be considered for use as ultrathin perfect absorbers and provide a methodology for the design of absorbing systems at any desired frequency.

Gold Substrate-Induced Single-Mode Lasing of GaN Nanowires.

Emerging applications such as solid-state lighting and display technologies require micro-scale vertically emitting lasers with controllable distinct lasing wavelengths and broad wavelength tunability arranged in desired geometrical patterns to form “super-pixels”. Conventional edge-emitting lasers and current surface-emitting lasers that require abrupt changes in semiconductor bandgaps or cavity length are not a viable solution. Here, we successfully address these challenges by introducing a new paradigm that extends the laser tuning range additively by employing multiple monolithically grown gain sections each with a different emission centre wavelength. We demonstrate this using broad gain-bandwidth III-nitride multiple quantum well (MQW) heterostructures and a novel top-down nanowire photonic crystal nanofabrication. We obtain single-mode lasing in the blue-violet spectral region with a remarkable 60 nm of tuning (or 16% of the nominal centre wavelength) that is determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Stable single-mode lasing operation from a pair of coupled GaN nanowires is demonstrated through optical pumping. GaN nanowires with different lengths were placed side-by-side in contact to form a coupled cavity through nanoprobe manipulation. Unlike individual nanowire lasers, which operate in a combined multiple transverse and multiple longitude mode oscillation, a coupled nanowire-pair provides a mode selection mechanism through the Vernier effect, which can strongly enhance the free spectrum range between adjacent resonant modes and generate a stable single-mode operation with a high side-mode suppression ratio.

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

We demonstrate a method for mode-selection by coupling a GaN nanowire laser to an underlying gold substrate. Multimode lasing of GaN nanowires is converted to single-mode behavior following placement onto a gold film. A mode-dependent loss is generated by the absorbing substrate to suppress multiple transverse-mode operation with a concomitant increase in lasing threshold of only ∼13%. This method provides greater flexibility in realizing practical single-mode nanowire lasers and offers insight into the design of metal-contacted nanoscale optoelectronics.

Distributed feedback gallium nitride nanowire lasers

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.